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WAYTOGO FAST

Which Architecture Yields Two Other Generations Of Fully depleted Advanced Substrate and Technologies

Total Cost €

EC-Contrib. €

Partnership

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Outcomes and
results

WAYTOGO FAST project word cloud

Explore the words cloud of the WAYTOGO FAST project. It provides you a very rough idea of what is the project "WAYTOGO FAST" about.

line network box competitive architecture fabrication standard cmos waytogo close breakthrough institutes substrate 14nm fast compete installing film ip establishing thin demonstrator law things leadership 10nm circuits body utbb node buried chain pilot group manufacturing internet performance fdsoi phase prepare electronics added fabless platform strained manufacturer insulator depleted definition engineered spread houses ultra soitec created first generation ppac trade electronic moore eda companies 2018 healthcare stmicroelectronics tailor root area efficient edge oxide operated soi big transistor semiconductor wave battery academics leverage industrialization silicon distributed industry off substrates foundry power providers preparing 19 energy

Project "WAYTOGO FAST" data sheet

The following table provides information about the project.

Coordinator	STMICROELECTRONICS CROLLES 2 SAS Organization address address: RUE JEAN MONNET 850 city: CROLLES postcode: 38920 website: www.st.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.
Coordinator Country	France [FR]
Total cost	99˙399˙264 €
EC max contribution	25˙796˙579 € (26%)
Programme	1. H2020-EU.2.1.1.7. (ECSEL)
Code Call	ECSEL-2014-2
Funding Scheme	ECSEL-IA
Starting year	2015
Duration (year-month-day)	from 2015-05-01 to 2017-12-31

Partnership

Take a look of project's partnership.

#	participants	country	role	EC contrib. [€]
1	STMICROELECTRONICS CROLLES 2 SAS STMICROELECTRONICS CROLLES 2 SAS Organization address address: RUE JEAN MONNET 850 city: CROLLES postcode: 38920 website: www.st.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (CROLLES)	coordinator	1˙650˙839.00
2	COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES Organization address address: RUE LEBLANC 25 city: PARIS 15 postcode: 75015 website: www.cea.fr contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (PARIS 15)	participant	13˙831˙513.00
3	SOITEC SA SOITEC SA Organization address address: CHEMIN DES FRANQUES - PARC TECHNOLOGIQUE DES FONTAINES city: BERNIN postcode: 38190 website: www.soitec.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (BERNIN)	participant	3˙777˙540.00
4	FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. Organization address address: HANSASTRASSE 27C city: MUNCHEN postcode: 80686 website: www.fraunhofer.de contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (MUNCHEN)	participant	1˙289˙579.00
5	STMICROELECTRONICS SA STMICROELECTRONICS SA Organization address address: BOULEVARD ROMAIN ROLLAND 29 city: MONTROUGE postcode: 92120 website: www.st.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (MONTROUGE)	participant	708˙501.00
6	BRUKER AXS GMBH BRUKER AXS GMBH Organization address address: OSTLICHE RHEINBRUCKENSTRASSE 49 city: KARLSRUHE postcode: 76187 website: www.bruker-axs.de contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (KARLSRUHE)	participant	694˙160.00
7	CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS Organization address address: RUE MICHEL ANGE 3 city: PARIS postcode: 75794 website: www.cnrs.fr contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (PARIS)	participant	594˙996.00
8	EV GROUP E. THALLNER GMBH EV GROUP E. THALLNER GMBH Organization address address: DI ERICH THALLNER STRASSE 1 city: ST FLORIAN AM INN postcode: 4782 website: www.evgroup.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	AT (ST FLORIAN AM INN)	participant	534˙464.00
9	SOCIONEXT EUROPE GMBH SOCIONEXT EUROPE GMBH Organization address address: PITTLERSTRASSE 47 city: LANGEN postcode: 63225 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (LANGEN)	participant	284˙754.00
10	FEI ELECTRON OPTICS BV FEI ELECTRON OPTICS BV Organization address address: ACHTSEWEG NOORD GEBOUW AAE 5 city: EINDHOVEN postcode: 5651 GG website: www.fei.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	NL (EINDHOVEN)	participant	259˙898.00
11	NOVA MEASURING INSTRUMENTS LTD NOVA MEASURING INSTRUMENTS LTD Organization address address: WEIZMANN SCIENCE PARK BUILDING 22 city: REHOVOT postcode: 76100 website: www.nova.co.il contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	IL (REHOVOT)	participant	247˙812.00
12	GLOBALFOUNDRIES Dresden Module One LLC & Co. KG GLOBALFOUNDRIES Dresden Module One LLC & Co. KG Organization address address: Wilschdorfer Landstrasse 101 city: Dresden postcode: 1109 website: www.globalfoundries.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (Dresden)	participant	244˙805.00
13	SILTRONIC AG SILTRONIC AG Organization address address: HANNS SEIDEL PLATZ 4 city: MUNCHEN postcode: 81737 website: www.siltronic.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (MUNCHEN)	participant	168˙564.00
14	HSEB DRESDEN GMBH HSEB DRESDEN GMBH Organization address address: MANFRED VON ARDENNE RING 4 city: DRESDEN postcode: 1099 website: www.hseb-dresden.de contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (DRESDEN)	participant	145˙131.00
15	ISD LYSEIS OLOKRIROMENON SYSTIMATONANONYMOS ETAIREIA ISD LYSEIS OLOKRIROMENON SYSTIMATONANONYMOS ETAIREIA Organization address address: KIFISSIAS AVENUE 32 KTIPIO B ATRINA CENTER city: MAROUSSI postcode: 15125 website: www.isd.gr contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	EL (MAROUSSI)	participant	132˙234.00
16	SONY DEUTSCHLAND GMBH SONY DEUTSCHLAND GMBH Organization address address: KEMPERPLATZ 1 city: BERLIN postcode: 10785 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (BERLIN)	participant	129˙200.00
17	PRODRIVE TECHNOLOGIES BV PRODRIVE TECHNOLOGIES BV Organization address address: SCIENCE PARK EINDHOVEN 5501 city: SON postcode: 5692 EM website: www.prodrive.nl contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	NL (SON)	participant	113˙750.00
18	MUNEDA GMBH MUNEDA GMBH Organization address address: INSELKAMMERSTRASSE 5 city: UNTERHACHING postcode: 82008 website: http://www.muneda.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (UNTERHACHING)	participant	113˙442.00
19	LAM RESEARCH SAS LAM RESEARCH SAS Organization address address: 31 CHEMIN DU VIEUX CHENE city: MEYLAN postcode: 38240 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (MEYLAN)	participant	99˙009.00
20	GLOBAL TCAD SOLUTIONS GMBH GLOBAL TCAD SOLUTIONS GMBH Organization address address: BOSENDORFERSTRASSE 1/12 city: WIEN postcode: 1010 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	AT (WIEN)	participant	98˙820.00
21	HQ-Dielectrics GmbH HQ-Dielectrics GmbH Organization address address: Dornstadter Weg 9/1 city: Dornstadt postcode: 89160 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (Dornstadt)	participant	98˙628.00
22	UNIVERSITE CATHOLIQUE DE LOUVAIN UNIVERSITE CATHOLIQUE DE LOUVAIN Organization address address: PLACE DE L UNIVERSITE 1 city: LOUVAIN LA NEUVE postcode: 1348 website: www.uclouvain.be contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	BE (LOUVAIN LA NEUVE)	participant	84˙906.00
23	DAINIPPON SCREEN DEUTSCHLAND GMBH DAINIPPON SCREEN DEUTSCHLAND GMBH Organization address address: MUNDELHEIMER WEG 39 city: DUSSELDORF postcode: 40472 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (DUSSELDORF)	participant	75˙584.00
24	PICOSUN OY PICOSUN OY Organization address address: TIETOTIE 3 city: ESPOO postcode: 2150 website: www.picosun.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FI (ESPOO)	participant	72˙970.00
25	SYNOPSYS (NORTHERN EUROPE) LIMITED SYNOPSYS (NORTHERN EUROPE) LIMITED Organization address address: BROOK DRIVE 100 GREEN PARK city: READING BERKSHIRE postcode: RG2 6UJ website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	UK (READING BERKSHIRE)	participant	67˙483.00
26	ALCATEL-LUCENT DEUTSCHLAND AG ALCATEL-LUCENT DEUTSCHLAND AG Organization address address: LORENZSTRASSE 10 city: STUTTGART postcode: 70435 website: http://www.ict-earth.eu/ contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (STUTTGART)	participant	66˙375.00
27	INSTITUT POLYTECHNIQUE DE GRENOBLE INSTITUT POLYTECHNIQUE DE GRENOBLE Organization address address: AVENUE FELIX VIALLET 46 city: GRENOBLE CEDEX 1 postcode: 38031 website: http://www.grenoble-inp.fr contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (GRENOBLE CEDEX 1)	participant	64˙526.00
28	APPLIED MATERIALS FRANCE APPLIED MATERIALS FRANCE Organization address address: 864 CHEMIN DES FONTAINES city: BERNIN postcode: 38190 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (BERNIN)	participant	60˙519.00
29	UNIVERSIDAD DE GRANADA UNIVERSIDAD DE GRANADA Organization address address: CUESTA DEL HOSPICIO SN city: GRANADA postcode: 18071 website: www.ugr.es contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	ES (GRANADA)	participant	48˙750.00
30	Gold Standard Simulations ltd Gold Standard Simulations ltd Organization address address: Mitchell Street 90 Gordon Chambers city: Glasgow postcode: G1 3NQ website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	UK (Glasgow)	participant	37˙816.00
31	LAM RESEARCH AG LAM RESEARCH AG Organization address address: SEZ-STRASSE 1 city: VILLACH postcode: 9500 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	AT (VILLACH)	participant	0.00
32	STMICROELECTRONICS GRENOBLE 2 SAS STMICROELECTRONICS GRENOBLE 2 SAS Organization address address: RUE JULES HOROWITZ 12 city: GRENOBLE postcode: 38000 website: www.st.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	FR (GRENOBLE)	participant	0.00
33	TOKYO ELECTRON EUROPE LIMITED TOKYO ELECTRON EUROPE LIMITED Organization address address: PIONEER CRAWLEY BUSINESS QUARTER FLEMING WAY city: CRAWLEY postcode: RH10 9QL website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	UK (CRAWLEY)	participant	0.00

Map

Project objective

The proposed pilot line project WAYTOGO FAST objective is to leverage Europe leadership in Fully Depleted Silicon on Insulator technology (FDSOI) so as to compete in leading edge technology at node 14nm and beyond preparing as well the following node transistor architecture. Europe is at the root of this breakthrough technology in More Moore law. The project aims at establishing a distributed pilot line between 2 companies: - Soitec for the fabrication of advanced engineered substrates (UTBB: Ultra Thin Body and BOx (buried oxide)) without and with strained silicon top film. - STMicroelectronics for the development and industrialization of state of the art FDSOI technology platform at 14nm and beyond with an industry competitive Power-Performance-Area-Cost (PPAC) trade-off. The project represents the first phase of a 2 phase program aiming at establishing a 10nm FDSOI technology for 2018-19. A strong added value network is created across this project to enhance a competitive European value chain on a European breakthrough and prepare next big wave of electronic devices. The consortium gathers a large group of partners: academics/institutes, equipment and substrate providers, semiconductor companies, a foundry, EDA providers, IP providers, fabless design houses, and a system manufacturer. E&M will contribute to the objective of installing a pilot line capable of manufacturing both advanced SOI substrates and FDSOI CMOS integrated circuits at 14nm and beyond. Design houses and electronics system manufacturer will provide demonstrator and enabling IP, to spread the FDSOI technology and establish it as a standard in term of leading edge energy efficient CMOS technology for a wide range of applications battery operated (consumer , healthcare, Internet of things) or not. Close collaboration between the design activities and the technology definition will tailor the PPAC trade-off of the next generation of technology to the applications needs.

Publications

List of publications.
year	authors and title	journal	last update
2015	J. Widieza, F. Mazena, J-M. Hartmanna, Y. Bogumilowicza, E. Augendrea, C. Veytizoub, S. Solliera, M. Martinc, M-C. Rourea, V. Loupa, C. Euvrada, A. Seignarda, T. Baronc, R. Ciproc, F. Bassanic, A-M. Papona, C. Guedja, I. Huyetb, M. Rivoirea, P. Bessona, C. Figuetb, W. Schwarzenbachb, D. Delpratb and T. Signamarcheixa â€œHigh Mobility Materials on Insulator for Advanced Technology Nodesâ€ published pages: , ISSN: , DOI:		2019-09-04
2016	Theano A. Karatsori, Christoforos G. Theodorou, Xavier Mescot, Sebastien Haendler, Nicolas Planes, Gerard Ghibaudo, Charalabos A. Dimitriadis Study of Hot-Carrier-Induced Traps in Nanoscale UTBB FD-SOI MOSFETs by Low-Frequency Noise Measurements published pages: 1-7, ISSN: 0018-9383, DOI: 10.1109/TED.2016.2583504	IEEE Transactions on Electron Devices	2019-09-04
2016	L. Gerlich, M. Wislicenus, B. Uhlig, S. Riedel, R. Liske Cobalt MOCVD as a Flexible Process in Semiconductor Industry published pages: , ISSN: , DOI:		2019-09-04
2017	Cristina Medina-Bailon, Jose L. Padilla, Carlos Sampedro, Cem Alper, Francisco Gamiz, Adrian Mihai Ionescu Implementation of Band-to-Band Tunneling Phenomena in a Multisubband Ensemble Monte Carlo Simulator: Application to Silicon TFETs published pages: 3084-3091, ISSN: 0018-9383, DOI: 10.1109/TED.2017.2715403	IEEE Transactions on Electron Devices 64/8	2019-09-04
2017	T. Lim et al. â€œSlow-wave coplanar strip line based Low-power 80-GHz Voltage Control Oscillator on 22-nm FDSOI technology,â€ published pages: , ISSN: , DOI:		2019-09-04
2017	C.Maleville â€œDesigning with FD-SOI Technologiesâ€ published pages: , ISSN: , DOI:		2019-09-04
2015	J.L. Rouviere, Y. Martin, N. Bernier, M. Vigouroux, D. Cooper, J.M. Zuo Using Electron Diffraction Techniques, CBED and N-PED to measure Strain with High Precision and High Spatial Resolution published pages: 2209-2210, ISSN: 1431-9276, DOI: 10.1017/S1431927615011824	Microscopy and Microanalysis 21/S3	2019-09-04
2017	M. Czernohorsky, K. Seidel, K. KÃ¼hnel, J. Niess, N. Sacher, W. Kegel, W. Lerch High-K metal gate stacks with ultra-thin interfacial layers formed by low temperature microwave-based plasma oxidation published pages: 262-265, ISSN: 0167-9317, DOI: 10.1016/j.mee.2017.05.041	Microelectronic Engineering 178	2019-09-04
2015	Y. Y. Wang, D. Cooper, J. Rouviere, C.E. Murray, N. Bernier, J. Bruley Nanoscale Strain Mapping in Embedded SiGe Devices by Dual Lens Dark Field Electron Holography and Precession Electron Diffraction published pages: 1963-1964, ISSN: 1431-9276, DOI: 10.1017/S1431927615010594	Microscopy and Microanalysis 21/S3	2019-09-04
2015	J. Kunkel â€œDesigning with FD-SOIâ€œ & â€œInterconnected Worldâ€. published pages: , ISSN: , DOI:		2019-09-04
2017	P.Flatresse The FDSOI history and its future published pages: , ISSN: , DOI:		2019-09-04
2016	F.Buchali Preemphased Prime Frequency Multicarrier Bases ENOB Assessment and its Application for Optimizing a Dual-Carrier 1-Tb/s QAM Transmitter published pages: , ISSN: , DOI:		2019-09-04
2015	T. Piliszczuk â€œEngineered substrates for low-power devicesâ€ published pages: , ISSN: , DOI:		2019-09-04
2017	C.Mazure Keynote - The FDSOI saga published pages: , ISSN: , DOI:		2019-09-04
2016	B.-Y. Nguyen, M.Sadaka, G.Gaudin, W. Schwarzenbach, K.Boudelle,C.Figuet and C.Maleville â€œBeyond Silicon CMOS: Progress and challengesâ€ published pages: , ISSN: , DOI:		2019-09-04
2014	M. P. Vigouroux, V. Delaye, N. Bernier, R. Cipro, D. Lafond, G. Audoit, T. Baron, J. L. RouviÃ¨re, M. Martin, B. Chenevier, F. Bertin Strain mapping at the nanoscale using precession electron diffraction in transmission electron microscope with off axis camera published pages: 191906, ISSN: 0003-6951, DOI: 10.1063/1.4901435	Applied Physics Letters 105/19	2019-09-04
2015	G. Besnard, X. Garros, A. Subirats, F. Andrieu, X. Federspiel, M. Rafik, W. Schwarzenbach, G. Reimbold, O. Faynot, S. Cristoloveanu and C. Mazure â€œInvestigation of Hot Carrier reliability of SOI and sSOI transistors using Back Biasâ€ published pages: , ISSN: , DOI:		2019-09-04
2015	Nguyen, S. Barraud, L. Hutin, C. Tabone, F. Glowacki, J.-M. Hartmann, M.-P. Samsonâ€ , L. Ecarnot, B.-Y. NguyenÂ¤, C. Maleville, C. MazurÃ©, O. Faynot, M. Vinet â€œP-FET Co-Integration on Si and Strained SiGe Dual Channel Substrates Obtained by Ge Local Enrichment Techniqueâ€ published pages: , ISSN: , DOI:		2019-09-04
2017	L. Fauquier, B. Pelissier, D. Jalabert, F. Pierre, J.M. Hartmann, F. RozÃ©, D. Doloy, D. Le Cunff, C. Beitia, T. Baron Benefits of XPS nanocharacterization for process development and industrial control of thin SiGe channel layers in advanced CMOS technologies published pages: 105-110, ISSN: 1369-8001, DOI: 10.1016/j.mssp.2016.10.028	Materials Science in Semiconductor Processing 70	2019-09-04
2017	Yoann Blancquaert, Nivea Figueiro, Thibault Labbaye, Francisco Sanchez, Stephane Heraud, Roy Koret, Matthew Sendelbach, Ralf Michel, Shay Wolfling, Stephane Rey, Laurent Pain Scatterometry control for multiple electron beam lithography published pages: 101451F, ISSN: , DOI: 10.1117/12.2261389	Metrology, Inspection, and Process Control for Microlithography XXXI	2019-09-04
2015	David Cooper, Nicolas Bernier, Jean-Luc RouviÃ¨re Combining 2 nm Spatial Resolution and 0.02% Precision for Deformation Mapping of Semiconductor Specimens in a Transmission Electron Microscope by Precession Electron Diffraction published pages: 5289-5294, ISSN: 1530-6984, DOI: 10.1021/acs.nanolett.5b01614	Nano Letters 15/8	2019-09-04
2015	L. Gaben, S. Barraud, P. Pimenta-Barros, Y. Morand, J. Pradelles, M.-P. Samson, B. Previtali, P. Besson, F. Allain, S. Monfray, F. Boeuf, T. Skotnicki, F. Balestra3 and M. Vine â„¦-Gate Nanowire Transistors Realized by Sidewall Image Transfer Patterning: 35nm channel pitch and opportunities for stacked-Nanowires architectures published pages: , ISSN: , DOI:		2019-09-04
2017	Licinius Benea, Maryline Bawedin, CÃ©cile Delacour, Irina Ionica Out-of-equilibrium body potential measurements in pseudo-MOSFET for sensing applications published pages: , ISSN: 0038-1101, DOI: 10.1016/j.sse.2017.11.010	Solid-State Electronics	2019-09-04
2015	A. Bonnevialle, C. Le Royer, Y. Morand, S. Reboh, J.-M. PÃ©dini, A. Roule, D. Marseilhan, P. Besson, D. Rouchon, N. Bernier, C. Tabone, C. Plantier, M. Vinet, A New Method to Induce Local Tensile Strain in SOI Wafers: First Strain Results of the â€œBOX Creepâ€ Techniqueâ€ published pages: , ISSN: , DOI:		2019-09-04
2016	A.Durand Characterization and industrial control of local stress in microelectronics: - Applications to advanced transistors technology of 20 nm published pages: , ISSN: , DOI:		2019-09-04
2013	G. Kozlowski, O. Fursenko, P. Zaumseil, T. Schroeder, M. Vorderwestner, P. Storck (Invited) Epitaxial Growth of Low Defect SiGe Buffer Layers for Integration of New Materials on 300 mm Silicon Wafers published pages: 613-621, ISSN: 1938-5862, DOI: 10.1149/05009.0613ecst	ECS Transactions 50/9	2019-09-04
2016	A DURAND, M KAUFLING, D LE-CUNFF, D ROUCHON, P GERGAUDÂ Fast and Accurate solution of inverse problem for in-line monitoring of strain field determined by High Resolution X-Ray Diffraction Reciprocal Space Mapping published pages: , ISSN: , DOI:		2019-09-04
2016	J. Widiez, C. Veytizou, J.-M. Hartmann, V. Loup, P. Besson, N. Baumel, C. Figuet, I. Huyet, F. Mazen, W. Schwarzenbach, C. Tempesta, L. Ecarnot 300 mm SiGe-On-Insulator Substrates with High Ge Content (70%) Fabricated Using the Smart CutÂ Technology published pages: 79-88, ISSN: 1938-5862, DOI: 10.1149/07508.0079ecst	ECS Transactions 75/8	2019-09-04
2016	A. Bonnevialle, S. Reboh, C. Le Royer, Y. Morand, J.-M. Hartmann, D. Rouchon, J.-M. Pedini, C. Tabone, N. Rambal, A. Payet, C. Plantier, F. Boeuf, M. Haond, A. Claverie, M. Vinet Localized STRASS Technique on Advanced FDSOI Platform: Highly Tensile Si Demonstration for Dual Strain CMOS Integration published pages: , ISSN: , DOI:		2019-09-04
2017	Mirjana Videnovic-Misic Class AB Base-Band Amplifier Design with Body Biasing in 28nm UTBB FD-SOI CMOS published pages: , ISSN: , DOI:		2019-09-04
2016	P.Gupta Advanced CMOS Nodes (FDSOI, FinFET) usage for High Reliability Markets from Device and Design published pages: , ISSN: , DOI:		2019-09-04
2016	K. KÃ¼hnel, S. Riedel, W. Weinreich, X. Thrun, M. Czernohorsky, B. PÃ¤tzold, M. Rudolph Catalytic ALD of SiO2 as spacer for an E-Beam direct write self-aligned double patterning process on 300 mm wafers published pages: , ISSN: , DOI:		2019-09-04
2017	Guerric de Streel, Francois Stas, Thibaut Gurne, Francois Durant, Charlotte Frenkel, Andreia Cathelin, David Bol SleepTalker: A ULV 802.15.4a IR-UWB Transmitter SoC in 28-nm FDSOI Achieving 14 pJ/b at 27 Mb/s With Channel Selection Based on Adaptive FBB and Digitally Programmable Pulse Shaping published pages: 1163-1177, ISSN: 0018-9200, DOI: 10.1109/JSSC.2016.2645607	IEEE Journal of Solid-State Circuits 52/4	2019-09-04
2015	N. Kernevez â€œHow innovation and eco-system in Europe can enable future requirements in automotive electronicsâ€ published pages: , ISSN: , DOI:		2019-09-04
2016	C.Maleville â€œSubstrate maturity+D61:M61+D61:M61 and readiness in large volume to support mass adoption of ULP FDSOI platformsâ€ published pages: , ISSN: , DOI:		2019-09-04
2017	F. Andrieu, R. Berthelon, R. Boumchedda, G. Tricaud, L. Brunet, P. Batude, B. Mathieu, E. Avelar, A. Ayres de Sousa, G. Cibrario, O. Rozeau, J. Lacord, O. Billoint, C. Fenouillet-BÃ©ranger, S. Guissi, D. Fried, P. Morin, J.P. Noel, B. Giraud, S. Thuries, F. Arnaud, M. Vinet Design Technology Co-Optimization of 3D-monolithic standard cells and SRAM exploiting dynamic back-bias for ultra-low-voltage operation published pages: , ISSN: , DOI:		2019-09-04
2016	W. Schwarzenbach, F. Allibert, C. Figuet, C. Girard and C. Maleville â€œMaterial and Device Innovation for Cost Effective CMOS Scaling Beyond 28nmâ€ published pages: , ISSN: , DOI:		2019-09-04
2017	Carlos Marquez, Noel Rodriguez, Francisco Gamiz, Akiko Ohata Insights on the Body Charging and Noise Generation by Impact Ionization in Fully Depleted SOI MOSFETs published pages: 5093-5098, ISSN: 0018-9383, DOI: 10.1109/TED.2017.2762733	IEEE Transactions on Electron Devices 64/12	2019-09-04
2017	N. Ben Salem, R.K. Gupta â€œHigh Sigma Functional Qualification for Flipflops using MunEDA WiCkeD,â€ published pages: , ISSN: , DOI:		2019-09-04
2017	J.-L. Rouviere, B. Haas, E. Robin, D. Cooper, N. Bernier, M. Williamson The Measurement of Strain, Chemistry and Electric Fields by STEM based Techniques published pages: 1414-1415, ISSN: 1431-9276, DOI: 10.1017/S1431927617007735	Microscopy and Microanalysis 23/S1	2019-09-04
2017	Andreia Cathelin Fully Depleted Silicon on Insulator Devices CMOS: The 28-nm Node Is the Perfect Technology for Analog, RF, mmW, and Mixed-Signal System-on-Chip Integration published pages: 18-26, ISSN: 1943-0582, DOI: 10.1109/MSSC.2017.2745738	IEEE Solid-State Circuits Magazine 9/4	2019-09-04
2016	M. Wislicenus, T. Martin, L. Gerlich, B. Uhlig Selective Area Deposition of MOCVD Co for BEOL Capping Applications published pages: , ISSN: , DOI:		2019-09-04
2016	W. Lerch, N. Sacher, W. Kegel, J. Niess, M. Czernohorsky Oxidation of Germanium at Low-temperature by Plasma Enhanced Processing published pages: , ISSN: , DOI:		2019-09-04
2018	C. Landesberger et al. â€œNovel chip embedding and interconnection technology for mm-wave System-in-Package (SiP) applications,â€ published pages: , ISSN: , DOI:		2019-09-04
2017	Theano A. Karatsori, Christoforos G. Theodorou, Emmanuel Josse, Charalabos A. Dimitriadis, G. Ghibaudo All Operation Region Characterization and Modeling of Drain and Gate Current Mismatch in 14-nm Fully Depleted SOI MOSFETs published pages: 2080-2085, ISSN: 0018-9383, DOI: 10.1109/TED.2017.2686381	IEEE Transactions on Electron Devices 64/5	2019-09-04
2017	AurÃ¨le Durand, Melissa Kaufling, Delphine Le-Cunff, Denis Rouchon, Patrice Gergaud In-line monitoring of strain distribution using high resolution X-ray Reciprocal space mapping into 20 nm SiGe pMOS published pages: 99-104, ISSN: 1369-8001, DOI: 10.1016/j.mssp.2016.12.003	Materials Science in Semiconductor Processing 70	2019-09-04
2017	C.Maleville Designing wit FD-SOI technologies published pages: , ISSN: , DOI:		2019-09-04
2017	N.Daval SU3200 use case to enable AngstrÃ¶m level FDSOI uniformity all wafers all points published pages: , ISSN: , DOI:		2019-09-04
2017	Carlos Marquez, Noel Rodriguez, Francisco Gamiz, Akiko Ohata Systematic method for electrical characterization of random telegraph noise in MOSFETs published pages: 115-120, ISSN: 0038-1101, DOI: 10.1016/j.sse.2016.10.031	Solid-State Electronics 128	2019-09-04
2017	R. Berthelon, F. Andrieu, S. Ortolland, R. Nicolas, T. Poiroux, E. Baylac, D. Dutartre, E. Josse, A. Claverie, M. Haond Characterization and modelling of layout effects in SiGe channel pMOSFETs from 14nm UTBB FDSOI technology published pages: 72-79, ISSN: 0038-1101, DOI: 10.1016/j.sse.2016.10.011	Solid-State Electronics 128	2019-09-04
2016	David Cooper, Thibaud Denneulin, Nicolas Bernier, Armand BÃ©chÃ©, Jean-Luc RouviÃ¨re Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope published pages: 145-165, ISSN: 0968-4328, DOI: 10.1016/j.micron.2015.09.001	Micron 80	2019-09-04
2016	Carlos Marquez, Noel Rodriguez, Francisco Gamiz, Rafael Ruiz, Akiko Ohata Electrical characterization of Random Telegraph Noise in Fully-Depleted Silicon-On-Insulator MOSFETs under extended temperature range and back-bias operation published pages: 60-65, ISSN: 0038-1101, DOI: 10.1016/j.sse.2015.11.022	Solid-State Electronics 117	2019-09-04
2015	C. Marquez, N. Rodriguez, J. M. Montes, R. Ruiz, F. Gamiz, C. Sampedro, A. Ohata Direct Characterization of Impact Ionization Current in Silicon-on-Insulator Body-Contacted MOSFETs published pages: 93-99, ISSN: 1938-5862, DOI: 10.1149/06605.0093ecst	ECS Transactions 66/5	2019-09-04
2016	W. Lerch, T. Schick, N. Sacher, W. Kegel, J. Niess, M. Czernohorsky, S. Riedel (Invited) Low-Temperature Microwave-Based Plasma Oxidation of Ge and Oxidation of Silicon Followed by Plasma Nitridation published pages: 101-114, ISSN: 1938-5862, DOI: 10.1149/07204.0101ecst	ECS Transactions 72/4	2019-09-04
2016	Walter Schwarzenbach, Bich-Yen Nguyen, Frederic Allibert, Christophe Girard, Christophe Maleville Ultra-thin body & buried oxide SOI substrate development and qualification for Fully Depleted SOI device with back bias capability published pages: 2-9, ISSN: 0038-1101, DOI: 10.1016/j.sse.2015.11.008	Solid-State Electronics 117	2019-09-04
2017	A.S.N. Pereira, G. de Streel, N. Planes, M. Haond, R. Giacomini, D. Flandre, V. Kilchytska An in-depth analysis of temperature effect on DIBL in UTBB FD SOI MOSFETs based on experimental data, numerical simulations and analytical models published pages: 67-71, ISSN: 0038-1101, DOI: 10.1016/j.sse.2016.10.017	Solid-State Electronics 128	2019-09-04
2016	C. Medina-Bailon, C. Sampedro, F. GÃ¡miz, A. Godoy, L. Donetti Impact of non uniform strain configuration on transport properties for FD14+ devices published pages: 232-236, ISSN: 0038-1101, DOI: 10.1016/j.sse.2015.08.013	Solid-State Electronics 115	2019-09-04

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