RAINBOW
High quality Material and intrinsic Properties of InN and indium rich Nitride Alloys - (The RAINBOW ITN)
| Coordinatore | CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
Organization address
address: Rue Michel -Ange 3 contact info |
| Nazionalità Coordinatore | France [FR] |
| Totale costo | 4˙778˙667 € |
| EC contributo | 4˙778˙667 € |
| Programma | FP7-PEOPLE
Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013) |
| Code Call | FP7-PEOPLE-2007-1-1-ITN |
| Funding Scheme | MC-ITN |
| Anno di inizio | 2008 |
| Periodo (anno-mese-giorno) | 2008-10-01 - 2012-09-30 |
Partecipanti
| # | ||||
|---|---|---|---|---|
| 1 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
Organization address
address: Rue Michel -Ange 3 contact info |
FR (PARIS) | coordinator | 0.00 |
| 2 |
AALTO-KORKEAKOULUSAATIO
Organization address
address: OTAKAARI 1 contact info |
FI (ESPOO) | participant | 0.00 |
| 3 |
AIXTRON AG
Organization address
address: Kaiserstrasse 98 contact info |
DE (HERZOGENRATH) | participant | 0.00 |
| 4 |
ALMA MATER STUDIORUM-UNIVERSITA DI BOLOGNA
Organization address
address: Via Zamboni 33 contact info |
IT (BOLOGNA) | participant | 0.00 |
| 5 |
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
Organization address
address: BATIMENT CE 3316 STATION 1 contact info |
CH (LAUSANNE) | participant | 0.00 |
| 6 |
FRIEDRICH-SCHILLER-UNIVERSITAT JENA
Organization address
address: FURSTENGRABEN 1 contact info |
DE (JENA) | participant | 0.00 |
| 7 |
III V LAB GIE
Organization address
address: ROUTE DE NOZAY contact info |
FR (MARCOUSSIS) | participant | 0.00 |
| 8 |
INSTYTUT FIZYKI POLSKIEJ AKADEMII NAUK
Organization address
address: AL LOTNIKOW 32/46 contact info |
PL (WARSZAWA) | participant | 0.00 |
| 9 |
OTTO-VON-GUERICKE-UNIVERSITAET MAGDEBURG
Organization address
address: UNIVERSITAETSPLATZ 2 contact info |
DE (MAGDEBURG) | participant | 0.00 |
| 10 |
TECHNISCHE UNIVERSITAET ILMENAU
Organization address
address: EHRENBERGSTRASSE 29 contact info |
DE (ILMENAU) | participant | 0.00 |
| 11 |
TECHNISCHE UNIVERSITAT BERLIN
Organization address
address: STRASSE DES 17 JUNI 135 contact info |
DE (BERLIN) | participant | 0.00 |
| 12 |
THE UNIVERSITY OF WARWICK
Organization address
address: Kirby Corner Road - University House - contact info |
UK (COVENTRY) | participant | 0.00 |
| 13 |
UNIVERSIDAD POLITECNICA DE MADRID
Organization address
address: Calle Ramiro de Maeztu 7 contact info |
ES (MADRID) | participant | 0.00 |
| 14 |
UNIVERSITY OF STRATHCLYDE
Organization address
address: Richmond Street 16 contact info |
UK (GLASGOW) | participant | 0.00 |
Mappa
Word cloud
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Obiettivo del progetto (Objective)
'Indium nitride is a new narrow gap semiconductor (<0.7 eV), which alloys with GaN (3.5 eV) and AlN (6.2 eV) will allow the spectral range from telecom to hard UV wavelengths to be covered. This narrow band gap makes InN an exciting material from which to develop highest efficiency solar cells. Moreover, due to an electron mobility of around 4000 cm2/Vs and very high saturation velocities, InN is an ideal material for the development of high electron mobility devices capable of operating in the Terahertz range. To ensure the production of reliable commercial devices, rigorous fundamental research is required to understand the layer growth mechanisms and optimize material properties. In RAINBOW, academic and industrial consortium, the theoretical work will encompass modelling of the atomic structure and properties of the material from empirical potentials to ab initio techniques. Experiments will provide correlated structural, electronic, optical and chemical information from the nano to the macroscopic scale. In a closely concerted effort, we will determine the best conditions for the growth of highest quality InN and In rich (In,Ga,Al)N alloys by the main growth techniques (MOVPE, PAMBE,HVPE ). Under the supervision of world leading experts, numerous young researchers will directly benefit from this interdisciplinary and multisectorial research and training effort. The young researchers involved in this programme will also learn to manage research and industrial projects.'
Introduzione (Teaser)
A collaboration between industrial and academic researchers is carrying out fundamental research into indium nitride-based materials. With potential applications in highly efficient solar cells and devices needing high electron mobility, the work is looking at layer growth mechanisms and optimising material properties.