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MORGAN

Materials for Robust Gallium Nitride

Coordinatore	III V LAB GIE Organization address address: ROUTE DE NOZAY city: MARCOUSSIS postcode: 91460 contact info Titolo: Ms. Nome: Louise Cognome: Pillon Email: send email Telefono: +33 1 30776928 Fax: +33 1 30776786
Nazionalità Coordinatore	France [FR]
Sito del progetto	http://www.morganproject.eu
Totale costo	13˙862˙596 €
EC contributo	9˙200˙000 €
Programma	FP7-NMP Specific Programme "Cooperation": Nanosciences, Nanotechnologies, Materials and new Production Technologies
Code Call	FP7-NMP-2007-LARGE-1
Funding Scheme	CP-IP
Anno di inizio	2008
Periodo (anno-mese-giorno)	2008-11-01 - 2011-10-31

Partecipanti

#	participant	country	role	EC contrib. [€]
1	III V LAB GIE Organization address address: ROUTE DE NOZAY city: MARCOUSSIS postcode: 91460 contact info Titolo: Ms. Nome: Louise Cognome: Pillon Email: send email Telefono: +33 1 30776928 Fax: +33 1 30776786	FR (MARCOUSSIS)	coordinator	1˙695˙396.00
2	SWEREA IVF AB Organization address address: Argongatan 30 city: MOELNDAL postcode: 43153 contact info Titolo: Ms. Nome: Sylvia Cognome: Håkansson Email: send email Telefono: +46 31 7066382 Fax: +46 31 276130	SE (MOELNDAL)	participant	786˙120.00
3	UNIVERSITY OF BATH Organization address address: CLAVERTON DOWN city: BATH postcode: BA2 7AY contact info Titolo: Mr. Nome: Peter Cognome: Hompstead Email: send email Telefono: +44 1225384490 Fax: +44 1225 383276	UK (BATH)	participant	776˙887.00
4	UNIVERSITAET ULM Organization address address: HELMHOLTZSTRASSE 16 city: ULM postcode: 89081 contact info Titolo: Mr. Nome: Rainer Cognome: Jerg Email: send email Telefono: +49 731 50 25066 Fax: +49 731 50 25068	DE (ULM)	participant	587˙909.00
5	MICROGAN GMBH Organization address address: Albert Einstein Allee 45 city: ULM postcode: 89081 contact info Titolo: Dr. Nome: Ulrich Cognome: Heinle Email: send email Telefono: 497315000000 Fax: 497315000000	DE (ULM)	participant	523˙993.00
6	FOUNDATION FOR RESEARCH AND TECHNOLOGY HELLAS Organization address address: N PLASTIRA STR 100 city: HERAKLION postcode: 70013 contact info Titolo: Ms. Nome: Zinovia Cognome: Papatheodorou Email: send email Telefono: 302810000000 Fax: 302810000000	EL (HERAKLION)	participant	523˙731.00
7	ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE Organization address address: BATIMENT CE 3316 STATION 1 city: LAUSANNE postcode: 1015 contact info Titolo: Ms. Nome: Aline Cognome: Gruaz Email: send email Telefono: -216933401 Fax: -216935449	CH (LAUSANNE)	participant	468˙906.00
8	AIXTRON SE Organization address address: KAISERSTRASSE 98 city: HERZOGENRATH postcode: 52134 contact info Titolo: Prof. Nome: Michael Cognome: Heuken Email: send email Telefono: +49 241 8909154 Fax: +49 241 8909149	DE (HERZOGENRATH)	participant	453˙096.00
9	RESEARCH CENTRE FOR NATURAL SCIENCES, HUNGARIAN ACADEMY OF SCIENCES Organization address address: PUSZTASZERI UTCA 59-67 city: BUDAPEST postcode: 1025 contact info Titolo: Dr. Nome: Béla Cognome: Pécz Email: send email Telefono: +36 1 3922587 Fax: +36 13922222	HU (BUDAPEST)	participant	391˙578.00
10	ELEMENT SIX LIMITED Organization address address: KINGS RIDE PARK 2 city: ASCOT postcode: SL5 8BP contact info Titolo: Mr. Nome: Christopher Cognome: Wort Email: send email Telefono: 441345000000 Fax: 441345000000	UK (ASCOT)	participant	326˙575.00
11	TECHNISCHE UNIVERSITAET WIEN Organization address address: Karlsplatz 13 city: WIEN postcode: 1040 contact info Titolo: Dr. Nome: Dionyz Cognome: Pogany Email: send email Telefono: +43 1 58801 362 24 Fax: +43 1 58801 362 99	AT (WIEN)	participant	312˙067.00
12	SLOVENSKA TECHNICKA UNIVERZITA V BRATISLAVE Organization address address: VAZOVOVA 5 city: BRATISLAVA postcode: 81243 contact info Titolo: Prof. Nome: Daniel Cognome: Donoval Email: send email Telefono: +421 2 65423486 Fax: +421 2 654 23 480	SK (BRATISLAVA)	participant	240˙636.00
13	CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE Organization address address: Rue Michel -Ange 3 city: PARIS postcode: 75794 contact info Titolo: Mr. Nome: Gilles Cognome: Pulvermuller Email: send email Telefono: +33 3 20 12 58 07 Fax: +33 3 20 63 00 43	FR (PARIS)	participant	238˙063.00
14	Gooch & Housego (Torquay) Limited Organization address address: BROOMHILL WAY UNIT A city: TORQUAY DEVON postcode: TQ2 7QL contact info Titolo: Mr. Nome: Andrew Cognome: Boteler Email: send email Telefono: +44 1803 407 785 Fax: +44 1803 407 891	UK (TORQUAY DEVON)	participant	224˙705.00
15	UNIVERSITY OF GLASGOW Organization address address: University Avenue city: GLASGOW postcode: G12 8QQ contact info Titolo: Prof. Nome: John Cognome: Weaver Email: send email Telefono: +44 141 330 5656 Fax: +44 141 330 4907	UK (GLASGOW)	participant	222˙327.00
16	INSTYTUT TECHNOLOGII ELEKTRONOWEJ Organization address address: al. Lotnikow 32/46 city: WARSZAWA postcode: 2668 contact info Titolo: Ms. Nome: Ewa Cognome: Bielec Email: send email Telefono: +48 22 5487900 Fax: +48 22 8470631	PL (WARSZAWA)	participant	222˙049.00
17	"Institute of Electrical Engineering, Slovak Academy of Sciences" Organization address address: Dubravska 9 city: Bratislava postcode: 841 04 contact info Titolo: Dr. Nome: Jozef Cognome: Fabian Email: send email Telefono: +421 2 54 77 58 06 Fax: +421 2 54 77 58 16	SK (Bratislava)	participant	213˙461.00
18	VIVID COMPONENTS LTD Organization address address: SIGMA HOUSE OAK VIEW CLOSE city: TORQUAY postcode: TQ2 7FF contact info Titolo: Dr. Nome: Bruce Robertson Cognome: Napier Email: send email Telefono: +49 5251 184 5331 Fax: +49 521 184 5332	UK (TORQUAY)	participant	209˙664.00
19	IMPACT COATINGS AB Organization address address: Westmansgatan 31 city: LINKOPING postcode: 58216 contact info Titolo: Mr. Nome: Torsten Cognome: Rosell Email: send email Telefono: +46 13 359952 Fax: +46 13 103790	SE (LINKOPING)	participant	185˙967.00
20	UNIVERSITE JOSEPH FOURIER GRENOBLE 1 Organization address address: "Avenue Centrale, Domaine Universitaire 621" city: GRENOBLE postcode: 38041 contact info Titolo: Ms. Nome: Leslie Cognome: Hollett Email: send email Telefono: +33 4 76514488 Fax: +33 4 76635956	FR (GRENOBLE)	participant	175˙442.00
21	GWENT ELECTRONIC MATERIALS LIMITED Organization address address: "Monmouth House, Mamhilad Park" city: PONTYPOOL postcode: NP4 0HZ contact info Titolo: Ms. Nome: Kathryn Cognome: Pearce Email: send email Telefono: +44 1495 750505 Fax: +44 1495 752121	UK (PONTYPOOL)	participant	173˙322.00
22	DIGITAL METAL AB Organization address address: BRUKSGATAN 35 city: HOGANAS postcode: 263 83 contact info Titolo: Mr. Nome: Urban Cognome: Harrysson Email: send email Telefono: +46 706 252517 Fax: +46 31 276130	SE (HOGANAS)	participant	156˙233.00
23	CESKE VYSOKE UCENI TECHNICKE V PRAZE Organization address address: ZIKOVA 4 city: PRAHA postcode: 166 36 contact info Titolo: Prof. Nome: Miroslav Cognome: Husak Email: send email Telefono: +4202 2435 2267 Fax: +4202 2431 0792	CZ (PRAHA)	participant	91˙873.00
24	THALES SA Organization address address: Rue de Villiers 45 city: NEUILLY SUR SEINE postcode: 92200 contact info Titolo: Mr. Nome: Olivier Cognome: Prevotat Email: send email Telefono: +33-1- 69 41 57 07 Fax: + 33 1 69 41 59 69	FR (NEUILLY SUR SEINE)	participant	0.00

Mappa

Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

n efficiency morgan deg withstand environments stable heterostructures above exhibits packaging gallium semiconductor operate scientists electronic electric gan radiation temperature mobility temperatures diamond power chemical polarisation device material thermal sensors corrosive electron handling extreme mechanical nitride possess robustness giving advantage sensor techniques metallisation conductivity materials ceramic durability industrial

Obiettivo del progetto (Objective)

'The MORGaN project addresses the need for a new materials for electronic devices and sensors that operate in extreme conditions, especially high temperature, high electric field and highly corrosive environment. It will take advantage of the excellent physical properties of diamond and gallium nitride heterostructures. The association of the two materials will give rise to the best materials and devices for ultimate performance in extreme environments. Both materials possess durability and robustness to high temperature, radiation and electric field. Diamond material exhibits the best mechanical robustness and thermal conductivity, while GaN presents also high electron mobility, giving high power handling and efficiency. III-N systems have other desirable properties for sensor applications in extreme environments. It is the only highly polar semiconductor matrix that has ceramic-like stability and can form heterostructures. It has the highest spontaneous polarisation with a Curie temperature above 1000°C for AlN: a lattice matched III-N heterostructure with a built-in polarisation discontinuity is expected to enable transistor action above 1000°C. The packaging and metallisation of an electronic device or sensor are important elements in extreme conditions. Metal contacts must be stable and the package must be thermally compatible with the device requirements and chemically stable. MORGaN proposes a novel technological solution to electron device and sensor modules. Advanced 3D ceramic packaging and new metallisation techniques based on the emerging technology of MN1AXN alloys will also be explored. As such, the vision of MORGaN for materials for extreme conditions is holistic, involving 2 large industrial partners, 2 industrial labs, 6 SMEs and 13 public research partners. The project includes research, demonstration, management, training and dissemination activities.'

Introduzione (Teaser)

New materials are being developed to create electronic devices and sensors that can withstand exposure to extreme conditions.

Descrizione progetto (Article)

Electronic devices and sensors often need to be used in high temperatures, high electric fields or in highly corrosive environments. Researchers from the 'Materials for robust gallium nitride' (Morgan) project are therefore investigating how diamond and gallium nitride (GaN) heterostructures can be used to produce the best materials for such conditions.

Devices and sensors designed to operate in harsh environments need new semiconductor materials which are stable, especially at high temperatures, and which have substrate and package combinations that enable rapid heat extraction or the capability to withstand high temperatures. Chemical inertness is also an advantage, especially if there is a need to monitor highly corrosive chemical agents.

Scientists in France believe that diamond and gallium nitride heterostructures fulfil these criteria: both materials 'possess durability and robustness to high temperature, radiation and electric fields'. They explain that 'diamond material exhibits the best mechanical robustness and thermal conductivity, while GaN presents high electron mobility, giving high power handling and efficiency'.

In addition, the packaging and metallisation of electronic devices or sensors are essential considerations in extreme conditions and environments, as the researchers highlight. The Morgan project scientists will therefore also trial advanced three-dimensional ceramic packaging and new metallisation techniques.