DELIGHT
Development of low-cost technologies for the fabrication of high-performance telecommunication lasers
| Coordinatore | TAMPEREEN TEKNILLINEN YLIOPISTO
Organization address
address: Korkeakoulunkatu 10 contact info |
| Nazionalità Coordinatore | Finland [FI] |
| Totale costo | 4˙782˙181 € |
| EC contributo | 3˙300˙000 € |
| Programma | FP7-ICT
Specific Programme "Cooperation": Information and communication technologies |
| Funding Scheme | CP |
| Anno di inizio | 2008 |
| Periodo (anno-mese-giorno) | 2008-09-01 - 2011-08-31 |
Partecipanti
| # | ||||
|---|---|---|---|---|
| 1 |
TAMPEREEN TEKNILLINEN YLIOPISTO
Organization address
address: Korkeakoulunkatu 10 contact info |
FI (TAMPERE) | coordinator | 0.00 |
| 2 |
ALCATEL THALES III V LAB
Organization address
address: ROUTE DE NOZAY contact info |
FR (MARCOUSSIS) | participant | 0.00 |
| 3 |
JULIUS-MAXIMILIANS UNIVERSITAET WUERZBURG
Organization address
address: 2, Sanderring contact info |
DE (Wuerzburg) | participant | 0.00 |
| 4 |
MERGEOPTICS GMBH
Organization address
address: AM BORSIGTURM 17 contact info |
DE (BERLIN) | participant | 0.00 |
| 5 |
MODULIGHT OY
Organization address
address: HERMIANKATU 22 contact info |
FI (TAMPERE) | participant | 0.00 |
| 6 |
POLITECHNIKA WROCLAWSKA
Organization address
address: WYBRZEZE WYSPIANSKIEGO 27 contact info |
PL (WROCLAW) | participant | 0.00 |
| 7 |
POLITECNICO DI TORINO
Organization address
address: Corso Duca degli Abruzzi 24 contact info |
IT (TORINO) | participant | 0.00 |
| 8 |
TECHNION - ISRAEL INSTITUTE OF TECHNOLOGY
Organization address
address: SENATE BUILDING TECHNION CITY contact info |
IL (HAIFA) | participant | 0.00 |
| 9 |
UNIVERSITAET KASSEL
Organization address
address: MOENCHEBERGSTRASSE 19 contact info |
DE (KASSEL) | participant | 0.00 |
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Obiettivo del progetto (Objective)
The 'Development of low-cost technologies for the fabrication of high-performance telecommunication lasers' project has two main objectives:
(1) Development of high-performance surface-grating-based DFB/DBR telecommunication lasers
(2) Development of ultra-high speed directly modulated lasers (> 40GBit/s) with a simplified multi-section design, which exploit high-order photonic resonances for extending the modulation bandwidth.
The project approach is to develop a common technological fabrication platform for both types of lasers based on surface gratings and other surface micro- and nano-structures. One important advantage in using surface structuring for increasing the performances and functionality of edge-emitting lasers is the elimination of the re-growth stage, which adds to the fabrication cost, affects the laser performances (notably the reliability and the characteristics shift in time) and reduces yield. The surface micro- and nano-structures will be imprinted by the low-cost and high-yield nano-imprint lithography, which will contribute to reducing the fabrication cost.
The developed surface-oriented technology will be largely independent on the underlying semiconductor structure and will be applied for the fabrication of InP- and GaAs-based edge-emitting lasers (EELs) working in the 1300 and 1550nm ranges. Although advanced materials (like dilute nitrides and antimony-containing dilute-nitrides) as well as low-dimensional structures (quantum dots and quantum dashes) will be investigated for developing the active regions of the lasers, the surface-oriented technology will be directly applicable to epitaxial layer structures already developed and tested in regular Fabry-Perot telecommunication EELs. Thus the developed surface-oriented approach will have the unique advantage of enabling the fabrication of higher-performance lasers from already tested and qualified 'legacy' epiwafers.