Explore the words cloud of the NEURAMORPH project. It provides you a very rough idea of what is the project "NEURAMORPH" about.
The following table provides information about the project.
RHEINISCH-WESTFAELISCHE TECHNISCHE HOCHSCHULE AACHEN
|Coordinator Country||Germany [DE]|
|Total cost||1˙499˙468 €|
|EC max contribution||1˙499˙468 € (100%)|
1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC))
|Duration (year-month-day)||from 2015-10-01 to 2021-09-30|
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|1||RHEINISCH-WESTFAELISCHE TECHNISCHE HOCHSCHULE AACHEN||DE (AACHEN)||coordinator||1˙499˙468.00|
After decades of perfecting the established way of computing, it is now evident that the fundamental logic of today’s computers will prevent them from ever reaching the efficiency of neural networks as found in nature. Neuromorphic hardware promises a leap forward by following the inherent working principles of biological neural networks. In very-large-scale integrated neuromorphic circuits incorporating an immense number of artificial neurons, the even much larger number of synapses poses the challenge of imitating especially the synaptic functionality in a most compact way. Over the last years, various memristive devices have been proposed to represent the weight of a synapse, determining how well electrical spikes are transmitted from one neuron to another. Existing attempts to achieve spike-timing-dependent plasticity, however, possess inherent problems. The NEURAMORPH project aims to develop a simple and compact circuit element to regulate the access to the memristive device for weight modifications. The dynamics of electrical excitability intrinsic to the employed amorphous semiconductors will naturally be able to mimic spike-timing-dependent plasticity. For full control over the properties of these synaptic access elements, a fundamental understanding of the relaxation processes in such amorphous materials is imperative. To this end, amorphization conditions will be systematically varied over a wide-range to create very distinct amorphous states. As a measure for relaxation the temporal evolution of their electrical properties will then be investigated. Based on experimental results for a variety of materials, molecular dynamics simulations will be employed to elucidate the relationship between elemental composition, structural dynamics and changing electrical excitability. Finally, as proof of concept, a prototype of a neuromorphic chip will be developed incorporating the new kind of synaptic device.
|year||authors and title||journal||last update|
Martin RÃ¼tten, Andreas Geilen, Abu Sebastian, Daniel Krebs, Martin Salinga
Localised states and their capture characteristics in amorphous phase-change materials
published pages: , ISSN: 2045-2322, DOI: 10.1038/s41598-019-43035-7
|Scientific Reports 9/1||2019-10-07|
Benedikt Kersting, Martin Salinga
Exploiting nanoscale effects in phase change memories
published pages: 357-370, ISSN: 1359-6640, DOI: 10.1039/c8fd00119g
|Faraday Discussions 213||2019-04-13|
Philip Bartlett, Alexandra I. Berg, Marco Bernasconi, Simon Brown, Geoffrey Burr, Cina Foroutan-Nejad, Ella Gale, Ruomeng Huang, Daniele Ielmini, Gabriela Kissling, Vladimir Kolosov, Michael Kozicki, Hisao Nakamura, Konstantin Rushchanskii, Martin Salinga, Alexander Shluger, Damien Thompson, Ilia Valov, Wei Wang, Rainer Waser, R. Stanley Williams
Phase-change memories (PCM) â€“ Experiments and modelling: general discussion
published pages: 393-420, ISSN: 1359-6640, DOI: 10.1039/c8fd90064g
|Faraday Discussions 213||2019-04-13|
Martin Salinga, Benedikt Kersting, Ider Ronneberger, Vara Prasad Jonnalagadda, Xuan Thang Vu, Manuel Le Gallo, Iason Giannopoulos, Oana Cojocaru-MirÃ©din, Riccardo Mazzarello, Abu Sebastian
Monatomic phase change memory
published pages: 681-685, ISSN: 1476-1122, DOI: 10.1038/s41563-018-0110-9
|Nature Materials 17/8||2019-04-13|
Manuel Le Gallo, Daniel Krebs, Federico Zipoli, Martin Salinga, Abu Sebastian
Collective Structural Relaxation in Phase-Change Memory Devices
published pages: 1700627, ISSN: 2199-160X, DOI: 10.1002/aelm.201700627
|Advanced Electronic Materials 4/9||2019-04-13|
Matthias Kaes, Martin Salinga
Impact of defect occupation on conduction in amorphous Ge2Sb2Te5
published pages: 1-12, ISSN: 2045-2322, DOI: 10.1038/srep31699
|Scientific Reports 6/1||2019-05-28|
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