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In-Need SIGNED

III-Nitrides Nanostructures for Energy-Efficiency Devices

Total Cost €

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EC-Contrib. €

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Partnership

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Project "In-Need" data sheet

The following table provides information about the project.

Coordinator
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE 

Organization address
address: BATIMENT CE 3316 STATION 1
city: LAUSANNE
postcode: 1015
website: www.epfl.ch

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Switzerland [CH]
 Total cost 1˙750˙000 €
 EC max contribution 1˙750˙000 € (100%)
 Programme 1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC))
 Code Call ERC-2015-STG
 Funding Scheme ERC-STG
 Starting year 2016
 Duration (year-month-day) from 2016-02-01   to  2021-01-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE CH (LAUSANNE) coordinator 1˙750˙000.00

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 Project objective

Energy efficiency offers a vast and low-cost resource to address future energy demand while reducing carbon dioxide emissions. The unique properties of III-Nitride semiconductors make them the ideal material for future energy challenges. Their outstanding optical properties are revolutionizing the world with efficient LED light bulbs. Even greater impact is anticipated for power electronics. The much larger Baliga’s figure of merit of GaN compared to SiC and Si enables drastically more efficient power switches, which are at the heart of any energy generation/management system. However, current III-Nitride device performance is far from the fundamental materials capabilities, and severe thermal management and reliability limitations hinder their full potential for energy-efficiency. The In-Need proposes a unique approach to address concurrently all current challenges based on advanced nanostructures designed to optimally exploit the superior properties of the new bulk GaN materials. Nanostructuring distinct regions of the device will allow a precise control over their intrinsic characteristics. To address reliability issues and yield unprecedented device performance, these nanostructures will be combined to the excellent properties of bulk GaN. This will open opportunities for new vertical devices, enabling smaller structures with larger voltages and higher efficiencies. Efficient thermal management will be achieved with ultra-near junction cooling. Nano/micro-channels filled with high thermal conductivity materials or coolants will be embedded inside the device. We believe our judicious nano-scale design of new high-performing materials will result in state-of-the-art devices, leading to a large-scale impact in energy efficiency. The miniaturization and large power density enabled by our approach will allow future integration of power devices into single power microchips. This will revolutionize energy use much like Silicon microchips did for information processing.

 Publications

year authors and title journal last update
List of publications.
2018 Riyaz Abdul Khadar, Chao Liu, Liyang Zhang, Peng Xiang, Kai Cheng, Elison Matioli
820-V GaN-on-Si Quasi-Vertical p-i-n Diodes With BFOM of 2.0 GW/cm2
published pages: 401-404, ISSN: 0741-3106, DOI: 10.1109/LED.2018.2793669
IEEE Electron Device Letters 39/3 2019-06-19
2017 Jun Ma, Elison Matioli
Slanted Tri-Gates for High-Voltage GaN Power Devices
published pages: 1305-1308, ISSN: 0741-3106, DOI: 10.1109/LED.2017.2731799
IEEE Electron Device Letters 38/9 2019-06-19
2017 Jun Ma, Dante Colao Zanuz, Elison Matioli
Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-off Voltage
published pages: 1298-1301, ISSN: 0741-3106, DOI: 10.1109/LED.2017.2734644
IEEE Electron Device Letters 38/9 2019-06-19
2017 Jun Ma, Minghua Zhu, Elison Matioli
900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain
published pages: 1704-1707, ISSN: 0741-3106, DOI: 10.1109/LED.2017.2761911
IEEE Electron Device Letters 38/12 2019-06-19
2017 Jun Ma, Elison Matioli
High Performance Tri-Gate GaN Power MOSHEMTs on Silicon Substrate
published pages: 367-370, ISSN: 0741-3106, DOI: 10.1109/LED.2017.2661755
IEEE Electron Device Letters 38/3 2019-06-19
2018 Chao Liu, Riyaz Abdul Khadar, Elison Matioli
Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes
published pages: 1034-1037, ISSN: 0741-3106, DOI: 10.1109/LED.2018.2841959
IEEE Electron Device Letters 39/7 2019-06-19
2018 Taifang Wang, Jun Ma, Elison Matioli
1100 V AlGaN/GaN MOSHEMTs With Integrated Tri-Anode Freewheeling Diodes
published pages: 1038-1041, ISSN: 0741-3106, DOI: 10.1109/LED.2018.2842031
IEEE Electron Device Letters 39/7 2019-06-19
2018 Chao Liu, Riyaz Abdul Khadar, Elison Matioli
GaN-on-Si Quasi-Vertical Power MOSFETs
published pages: 71-74, ISSN: 0741-3106, DOI: 10.1109/LED.2017.2779445
IEEE Electron Device Letters 39/1 2019-06-19
2018 Jun Ma, Catherine Erine, Peng Xiang, Kai Cheng, Elison Matioli
Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance
published pages: 242102, ISSN: 0003-6951, DOI: 10.1063/1.5064407
Applied Physics Letters 113/24 2019-04-16
2019 Riyaz Mohammed Abdul Khadar, Chao Liu, Reza Soleimanzadeh, Elison Matioli
Fully Vertical GaN-on-Si power MOSFETs
published pages: 443-446, ISSN: 0741-3106, DOI: 10.1109/led.2019.2894177
IEEE Electron Device Letters 40/3 2019-04-16
2019 Luca Nela, Minghua Zhu, Jun Ma, Elison Matioli
High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal
published pages: 439-442, ISSN: 0741-3106, DOI: 10.1109/led.2019.2896359
IEEE Electron Device Letters 40/3 2019-04-16
2019 Jun Ma, Georgios Kampitsis, Peng Xiang, Kai Cheng, Elison Matioli
Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance
published pages: 275-278, ISSN: 0741-3106, DOI: 10.1109/led.2018.2887199
IEEE Electron Device Letters 40/2 2019-04-16

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