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RESCUE SIGNED

REsistive-Switch CompUting bEyond CMOS

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EC-Contrib. €

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Partnership

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Project "RESCUE" data sheet

The following table provides information about the project.

Coordinator
POLITECNICO DI MILANO 

Organization address
address: PIAZZA LEONARDO DA VINCI 32
city: MILANO
postcode: 20133
website: www.polimi.it

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Italy [IT]
 Project website http://www.rescue.polimi.it
 Total cost 1˙998˙113 €
 EC max contribution 1˙998˙113 € (100%)
 Programme 1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC))
 Code Call ERC-2014-CoG
 Funding Scheme ERC-COG
 Starting year 2015
 Duration (year-month-day) from 2015-08-01   to  2020-07-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    POLITECNICO DI MILANO IT (MILANO) coordinator 1˙998˙113.00

Map

 Project objective

Digital computers rely today on CMOS (complementary metal-oxide-semiconductor) technology, which improves its performance every generation thanks to the Moore’s law of downscaling. As CMOS transistor size approaches few nm, alternative logic switches with better scaling capability must be identified to prolong Moore’s law beyond CMOS. Among the emerging switching concepts, resistive switching (RS) devices can change their resistance by electrically-induced redox reactions. RS provides the basis for the resistive memory (ReRAM) technology which is currently investigated as future computer memory and storage technology. The objective of this project is to design, develop and demonstrate a novel computing paradigm based on RS devices. The project will pursue this objective at 3 levels of increasing complexity, namely the device fabrication, the design of new logic gates and the demonstration of computing circuits. RS logic will be finally compared to CMOS and other approaches to identify the strength and the potential applications of RS logic in the computing scenario.

 Publications

year authors and title journal last update
List of publications.
2019 Wei Wang, Ming Wang, Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Zhong Sun, Xiaodong Chen, Daniele Ielmini
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
published pages: , ISSN: 2041-1723, DOI: 10.1038/s41467-018-07979-0
Nature Communications 10/1 2020-04-04
2019 Roberto Carboni, Elena Vernocchi, Manzar Siddik, Jon Harms, Andy Lyle, Gurtej Sandhu, Daniele Ielmini
A Physics-Based Compact Model of Stochastic Switching in Spin-Transfer Torque Magnetic Memory
published pages: 4176-4182, ISSN: 0018-9383, DOI: 10.1109/TED.2019.2933315
IEEE Transactions on Electron Devices 66/10 2020-04-04
2020 Daniele Ielmini, Stefano Ambrogio
Emerging neuromorphic devices
published pages: 92001, ISSN: 0957-4484, DOI: 10.1088/1361-6528/ab554b
Nanotechnology 31/9 2020-04-04
2019 Irene Munoz-Martin, Stefano Bianchi, Giacomo Pedretti, Octavian Melnic, Stefano Ambrogio, Daniele Ielmini
Unsupervised Learning to Overcome Catastrophic Forgetting in Neural Networks
published pages: 58-66, ISSN: 2329-9231, DOI: 10.1109/JXCDC.2019.2911135
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 5/1 2020-04-04
2018 Roberto Carboni, Daniele Ielmini
Stochastic Memory Devices for Security and Computing
published pages: 1900198, ISSN: 2199-160X, DOI: 10.1002/aelm.201900198
Advanced Electronic Materials 5/9 2020-04-04
2019 V. Milo, C. Zambelli, P. Olivo, E. Pérez, M. K. Mahadevaiah, O. G. Ossorio, Ch. Wenger, D. Ielmini
Multilevel HfO 2 -based RRAM devices for low-power neuromorphic networks
published pages: 81120, ISSN: 2166-532X, DOI: 10.1063/1.5108650
APL Materials 7/8 2020-04-04
2019 Wei Wang, Mario Laudato, Elia Ambrosi, Alessandro Bricalli, Erika Covi, Yu-Hsuan Lin, Daniele Ielmini
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion—Part II: Compact Modeling
published pages: 3802-3808, ISSN: 0018-9383, DOI: 10.1109/TED.2019.2928888
IEEE Transactions on Electron Devices 66/9 2020-04-04
2019 Wei Wang, Mario Laudato, Elia Ambrosi, Alessandro Bricalli, Erika Covi, Yu-Hsuan Lin, Daniele Ielmini
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling
published pages: 3795-3801, ISSN: 0018-9383, DOI: 10.1109/TED.2019.2928890
IEEE Transactions on Electron Devices 66/9 2020-04-04
2020 Valerio Milo, Gerardo Malavena, Christian Monzio Compagnoni, Daniele Ielmini
Memristive and CMOS Devices for Neuromorphic Computing
published pages: 166, ISSN: 1996-1944, DOI: 10.3390/ma13010166
Materials 13/1 2020-04-04
2019 Elia Ambrosi, Alessandro Bricalli, Mario Laudato, Daniele Ielmini
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices
published pages: 87-98, ISSN: 1359-6640, DOI: 10.1039/c8fd00106e
Faraday Discussions 213 2020-04-04
2019 Zhong Sun, Giacomo Pedretti, Elia Ambrosi, Alessandro Bricalli, Wei Wang, Daniele Ielmini
Solving matrix equations in one step with cross-point resistive arrays
published pages: 4123-4128, ISSN: 0027-8424, DOI: 10.1073/pnas.1815682116
Proceedings of the National Academy of Sciences 116/10 2020-04-04
2018 Daniele Ielmini
Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks
published pages: 44-53, ISSN: 0167-9317, DOI: 10.1016/j.mee.2018.01.009
Microelectronic Engineering 190 2019-06-06
2016 Daniele Ielmini
Physical Models of Program and Read Fluctuations in Metal Oxide Resistive RAM
published pages: , ISSN: 1938-6737, DOI: 10.1149/07505.0019ecst
ECS Trans. 2019-06-06
2018 Alessandro Bricalli, Elia Ambrosi, Mario Laudato, Marcos Maestro, Rosana Rodriguez, Daniele Ielmini
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices
published pages: 115-121, ISSN: 0018-9383, DOI: 10.1109/TED.2017.2777986
IEEE Transactions on Electron Devices 65/1 2019-06-06
2016 P. Fantini; Varesi, E; Lacaita, A.L.; Boniardi, M.; Ciocchini, N.; Ielmini, D.; Laudato, M.
Bipolar switching in chalcogenide phase change memory
published pages: , ISSN: 2045-2322, DOI: 10.1038/srep29162
Scientific Reports 1 2019-06-06
2016 S. Ambrogio V. Milo, Z. Wang, S. Balatti, and D. Ielmini
Analytical modeling of current overshoot in oxide-based resistive switching memory (RRAM)
published pages: , ISSN: 0741-3106, DOI: 10.1109/LED.2016.2600574
IEEE Electron Device Lett. 2019-06-06
2016 Daniele Ielmini
Resistive Switching Memories based on Metal Oxides: Mechanisms, Reliability and Scaling
published pages: , ISSN: 0268-1242, DOI: 10.1088/0268-1242/31/6/063002
Semiconductor Science and Technology 2019-06-07
2018 Alessandro Bricalli, Elia Ambrosi, Mario Laudato, Marcos Maestro, Rosana Rodriguez, Daniele Ielmini
Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part II: Select Devices
published pages: 122-128, ISSN: 0018-9383, DOI: 10.1109/TED.2017.2776085
IEEE Transactions on Electron Devices 65/1 2019-06-06
2017 Giacomo Pedretti, Valerio Milo, Stefano Ambrogio, Roberto Carboni, Stefano Bianchi, Alessandro Calderoni, Nirmal Ramaswamy, Alessandro S. Spinelli, Daniele Ielmini
Stochastic learning in neuromorphic hardware via spike timing dependent plasticity with RRAM synapses
published pages: 1-1, ISSN: 2156-3357, DOI: 10.1109/JETCAS.2017.2773124
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 2019-06-06
2016 S. Balatti, S. Ambrogio, R. Carboni, V. Milo, Z.-Q. Wang, A. Calderoni, N. Ramaswamy, and D. Ielmini
Physical unbiased generation of random numbers with coupled resistive switching devices
published pages: , ISSN: 0018-9383, DOI: 10.1109/TED.2016.2537792
IEEE Trans. Electron Devices 2019-06-06
2017 D. Ielmini, V. Milo
Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications
published pages: 1121-1143, ISSN: 1569-8025, DOI: 10.1007/s10825-017-1101-9
Journal of Computational Electronics 16/4 2019-06-06
2016 S. Ambrogio, S. Balatti, V. Milo, R. Carboni, Z. Wang, A. Calderoni, N. Ramaswamy, and D. Ielmini
Neuromorphic learning and recognition with one-transistor-one-resistor synapses and bistable metal oxide RRAM
published pages: , ISSN: 0018-9383, DOI: 10.1109/TED.2016.2526647
IEEE Trans. Electron Devices 2019-06-06
2017 G. Pedretti, V. Milo, S. Ambrogio, R. Carboni, S. Bianchi, A. Calderoni, N. Ramaswamy, A. S. Spinelli, D. Ielmini
Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity
published pages: , ISSN: 2045-2322, DOI: 10.1038/s41598-017-05480-0
Scientific Reports 7/1 2019-06-06
2016 Z. Wang, S. Ambrogio, S. Balatti, S. Sills, A. Calderoni, N. Ramaswamy, D. Ielmini
Post-cycling degradation in metal-oxide bipolar resistive switching memory (RRAM)
published pages: , ISSN: 0018-9383, DOI: 10.1109/TED.2016.2604370
IEEE Trans. Electron Devices 2019-06-06
2016 Agostino ePirovano; Mario eLaudato; Paolo eFantini; Nicola eCiocchini; Daniele eIelmini; Valerio eMilo; Stefano eAmbrogio
Unsupervised Learning by Spike Timing Dependent Plasticity in Phase Change Memory (PCM) Synapses
published pages: , ISSN: 1662-453X, DOI: 10.3389/fnins.2016.00056
Frontiers in Neuroscience, Vol 10 (2016) 1 2019-06-06
2018 Daniele Ielmini, H.-S. Philip Wong
In-memory computing with resistive switching devices
published pages: 333-343, ISSN: 2520-1131, DOI: 10.1038/s41928-018-0092-2
Nature Electronics 1/6 2019-04-03
2018 Yanyun Ren, Valerio Milo, Zhongqiang Wang, Haiyang Xu, Daniele Ielmini, Xiaoning Zhao, Yichun Liu
Analytical Modeling of Organic-Inorganic CH 3 NH 3 PbI 3 Perovskite Resistive Switching and its Application for Neuromorphic Recognition
published pages: 1700035, ISSN: 2513-0390, DOI: 10.1002/adts.201700035
Advanced Theory and Simulations 1/4 2019-04-03
2018 Zhong Sun, Elia Ambrosi, Alessandro Bricalli, Daniele Ielmini
Logic Computing with Stateful Neural Networks of Resistive Switches
published pages: 1802554, ISSN: 0935-9648, DOI: 10.1002/adma.201802554
Advanced Materials 30/38 2019-04-03
2018 Ming Wang, Wei Wang, Wan Ru Leow, Changjin Wan, Geng Chen, Yi Zeng, Jiancan Yu, Yaqing Liu, Pingqiang Cai, Hong Wang, Daniele Ielmini, Xiaodong Chen
Enhancing the Matrix Addressing of Flexible Sensory Arrays by a Highly Nonlinear Threshold Switch
published pages: 1802516, ISSN: 0935-9648, DOI: 10.1002/adma.201802516
Advanced Materials 30/33 2019-04-03
2018 Wei Wang, Giacomo Pedretti, Valerio Milo, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Alessandro S. Spinelli, Daniele Ielmini
Learning of spatiotemporal patterns in a spiking neural network with resistive switching synapses
published pages: eaat4752, ISSN: 2375-2548, DOI: 10.1126/sciadv.aat4752
Science Advances 4/9 2019-04-03
2018 Wei Wang, Giacomo Pedretti, Valerio Milo, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Alessandro Spinelli, Daniele Ielmini
Computing of Temporal Information in Spiking Neural Networks with ReRAM Synapses
published pages: , ISSN: 1359-6640, DOI: 10.1039/C8FD00097B
Faraday Discussions 2019-04-03
2018 Daniele Ielmini
Electrical Transport in crystalline and amorphous chalcogenide
published pages: , ISSN: , DOI:
Phase Change Memory: Device Physics, Reliability and Applications 2019-04-03
2018 Roberto Carboni, Stefano Ambrogio, Wei Chen, Manzar Siddik, Jon Harms, Andy Lyle, Witold Kula, Gurtej Sandhu, Daniele Ielmini
Modeling of Breakdown-Limited Endurance in Spin-Transfer Torque Magnetic Memory Under Pulsed Cycling Regime
published pages: 2470-2478, ISSN: 0018-9383, DOI: 10.1109/TED.2018.2822343
IEEE Transactions on Electron Devices 65/6 2019-04-03
2018 Adnan Mehonic, Alexander L. Shluger, David Gao, Ilia Valov, Enrique Miranda, Daniele Ielmini, Alessandro Bricalli, Elia Ambrosi, Can Li, J. Joshua Yang, Qiangfei Xia, Anthony J. Kenyon
Silicon Oxide (SiO x ): A Promising Material for Resistance Switching?
published pages: 1801187, ISSN: 0935-9648, DOI: 10.1002/adma.201801187
Advanced Materials 2019-04-03
2018 Valerio Milo, Giacomo Pedretti, Roberto Carboni, Alessandro Calderoni, Nirmal Ramaswamy, Stefano Ambrogio, Daniele Ielmini
A 4-Transistors/1-Resistor Hybrid Synapse Based on Resistive Switching Memory (RRAM) Capable of Spike-Rate-Dependent Plasticity (SRDP)
published pages: 1-10, ISSN: 1063-8210, DOI: 10.1109/TVLSI.2018.2818978
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 2019-04-03
2018 Roberto Carboni, Wei Chen, Manzar Siddik, Jon Harms, Andy Lyle, Witold Kula, Gurtej Sandhu, Daniele Ielmini
Random Number Generation by Differential Read of Stochastic Switching in Spin-Transfer Torque Memory
published pages: 951-954, ISSN: 0741-3106, DOI: 10.1109/LED.2018.2833543
IEEE Electron Device Letters 39/7 2019-04-03

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