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NITRIDE-SRH

Energy losses in nitride light-emitting diodes

Total Cost €

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EC-Contrib. €

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Partnership

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Project "NITRIDE-SRH" data sheet

The following table provides information about the project.

Coordinator
VALSTYBINIS MOKSLINIU TYRIMU INSTITUTAS FIZINIU IR TECHNOLOGIJOS MOKSLU CENTRAS 

Organization address
address: Savanoriu 231
city: VILNIUS
postcode: 2300
website: www.ftmc.lt

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Lithuania [LT]
 Project website https://puntukasblog.wordpress.com/research/nitride-SRH/
 Total cost 114˙432 €
 EC max contribution 114˙432 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2014
 Funding Scheme MSCA-IF-EF-RI
 Starting year 2015
 Duration (year-month-day) from 2015-05-01   to  2017-01-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    VALSTYBINIS MOKSLINIU TYRIMU INSTITUTAS FIZINIU IR TECHNOLOGIJOS MOKSLU CENTRAS LT (VILNIUS) coordinator 114˙432.00

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 Project objective

Light-emitting diodes (LEDs) are the future of lighting for general-purpose and industrial applications because of their potentially superior efficiencies. Group-III nitrides are the principal materials used to manufacture blue and green LEDs. However, they are still rather inefficient, despite a lot of research efforts. Increasing the efficiency and reducing the cost of LEDs is currently the question of paramount importance.

Nonradiative recombination at lattice defects is one of the main causes of reduced efficiencies. Direct experiments to determine the cause of nonradiative recombination are nearly impossible. This clearly calls for accurate theoretical modelling of nonradiative recombination in group-III nitride devices. A first-principles model will not only yield new knowledge about energy losses in nitride LEDs, but will also provide new insights into ways to improve device efficiencies. This is the main goal of the current Marie Skłodowska-Curie project.

The researcher, dr. Audrius Alkauskas, will be returning to Europe after 3.5 years in the USA. He will be employed in the Centre for Physical Sciences and Technology (FTMC), under the supervision of prof. Gintaras Valušis. During the project the researcher will become an independent group leader, and grow as a specialist in semiconductor physics via a close collaboration with his colleagues in Lithuania and abroad.

 Publications

year authors and title journal last update
List of publications.
2016 Audrius Alkauskas, Matthew D. McCluskey, Chris G. Van de Walle
Tutorial: Defects in semiconductors—Combining experiment and theory
published pages: 181101, ISSN: 0021-8979, DOI: 10.1063/1.4948245
Journal of Applied Physics 119/18 2019-07-23
2016 Cyrus E. Dreyer, Audrius Alkauskas, John L. Lyons, James S. Speck, Chris G. Van de Walle
Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters
published pages: 141101, ISSN: 0003-6951, DOI: 10.1063/1.4942674
Applied Physics Letters 108/14 2019-07-23
2017 Ymir K. Frodason, Klaus M. Johansen, Tor S. Bjørheim, Bengt G. Svensson, and Audrius Alkauskas
Zn vacancy as a polaronic hole trap in ZnO
published pages: , ISSN: 2469-9950, DOI: 10.1103/PhysRevB.95.094105
Physical Review B 95/9 2019-07-23
2016 Audrius Alkauskas, Cyrus E. Dreyer, John L. Lyons, Chris G. Van de Walle
Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors
published pages: 201304, ISSN: 2469-9950, DOI: 10.1103/PhysRevB.93.201304
Physical Review B 93/20 2019-07-23
2018 Y. K. Frodason, K. M. Johansen, T. S. Bjørheim, B. G. Svensson, A. Alkauskas
Zn vacancy-donor impurity complexes in ZnO
published pages: , ISSN: 2469-9950, DOI: 10.1103/PhysRevB.97.104109
Physical Review B 97/10 2019-07-23
2017 Jimmy-Xuan Shen, Darshana Wickramaratne, Cyrus E. Dreyer, Audrius Alkauskas, Erin Young, James S. Speck, Chris G. Van de Walle
Calcium as a nonradiative recombination center in InGaN
published pages: 21001, ISSN: 1882-0778, DOI: 10.7567/APEX.10.021001
Applied Physics Express 10/2 2019-07-23
2016 Darshana Wickramaratne, Jimmy-Xuan Shen, Cyrus E. Dreyer, Manuel Engel, Martijn Marsman, Georg Kresse, Saulius Marcinkevičius, Audrius Alkauskas, Chris G. Van de Walle
Iron as a source of efficient Shockley-Read-Hall recombination in GaN
published pages: 162107, ISSN: 0003-6951, DOI: 10.1063/1.4964831
Applied Physics Letters 109/16 2019-07-23
2017 J. L. Lyons, A. Alkauskas, A. Janotti, C. G. Van de Walle
Deep donor state of the copper acceptor as a source of green luminescence in ZnO
published pages: 42101, ISSN: 0003-6951, DOI: 10.1063/1.4995404
Applied Physics Letters 111/4 2019-07-23
2019 Y. K. Frodason, K. M. Johansen, A. Alkauskas, L. Vines
Negative- U and polaronic behavior of the Zn-O divacancy in ZnO
published pages: , ISSN: 2469-9950, DOI: 10.1103/physrevb.99.174106
Physical Review B 99/17 2019-07-23
2018 Darshana Wickramaratne, Cyrus E. Dreyer, Bartomeu Monserrat, Jimmy-Xuan Shen, John L. Lyons, Audrius Alkauskas, Chris G. Van de Walle
Defect identification based on first-principles calculations for deep level transient spectroscopy
published pages: 192106, ISSN: 0003-6951, DOI: 10.1063/1.5047808
Applied Physics Letters 113/19 2019-07-23

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