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NITRIDE-SRH

Energy losses in nitride light-emitting diodes

Total Cost €

EC-Contrib. €

Partnership

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Outcomes and
results

NITRIDE-SRH project word cloud

Explore the words cloud of the NITRIDE-SRH project. It provides you a very rough idea of what is the project "NITRIDE-SRH" about.

defects efficiencies group impossible sk scaron nonradiative device researcher causes lithuania valu ftmc he nearly light physics gintaras abroad industrial efficiency losses semiconductor supervision materials grow returning principal lighting theoretical inefficient usa prof sciences audrius experiments accurate blue paramount green physical nitride potentially first superior diodes yield odowska model reducing manufacture recombination efforts employed principles centre emitting lot energy alkauskas curie calls ways specialist close lattice leds direct purpose nitrides marie independent dr leader insights colleagues question despite

Project "NITRIDE-SRH" data sheet

The following table provides information about the project.

Coordinator	VALSTYBINIS MOKSLINIU TYRIMU INSTITUTAS FIZINIU IR TECHNOLOGIJOS MOKSLU CENTRAS Organization address address: Savanoriu 231 city: VILNIUS postcode: 2300 website: www.ftmc.lt contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.
Coordinator Country	Lithuania [LT]
Project website	https://puntukasblog.wordpress.com/research/nitride-SRH/
Total cost	114˙432 €
EC max contribution	114˙432 € (100%)
Programme	1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
Code Call	H2020-MSCA-IF-2014
Funding Scheme	MSCA-IF-EF-RI
Starting year	2015
Duration (year-month-day)	from 2015-05-01 to 2017-01-31

Partnership

Take a look of project's partnership.

#	participants	country	role	EC contrib. [€]
1	VALSTYBINIS MOKSLINIU TYRIMU INSTITUTAS FIZINIU IR TECHNOLOGIJOS MOKSLU CENTRAS VALSTYBINIS MOKSLINIU TYRIMU INSTITUTAS FIZINIU IR TECHNOLOGIJOS MOKSLU CENTRAS Organization address address: Savanoriu 231 city: VILNIUS postcode: 2300 website: www.ftmc.lt contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	LT (VILNIUS)	coordinator	114˙432.00

Map

Project objective

Light-emitting diodes (LEDs) are the future of lighting for general-purpose and industrial applications because of their potentially superior efficiencies. Group-III nitrides are the principal materials used to manufacture blue and green LEDs. However, they are still rather inefficient, despite a lot of research efforts. Increasing the efficiency and reducing the cost of LEDs is currently the question of paramount importance.

Nonradiative recombination at lattice defects is one of the main causes of reduced efficiencies. Direct experiments to determine the cause of nonradiative recombination are nearly impossible. This clearly calls for accurate theoretical modelling of nonradiative recombination in group-III nitride devices. A first-principles model will not only yield new knowledge about energy losses in nitride LEDs, but will also provide new insights into ways to improve device efficiencies. This is the main goal of the current Marie SkÅ‚odowska-Curie project.

The researcher, dr. Audrius Alkauskas, will be returning to Europe after 3.5 years in the USA. He will be employed in the Centre for Physical Sciences and Technology (FTMC), under the supervision of prof. Gintaras Valušis. During the project the researcher will become an independent group leader, and grow as a specialist in semiconductor physics via a close collaboration with his colleagues in Lithuania and abroad.

Publications

List of publications.
year	authors and title	journal	last update
2016	Audrius Alkauskas, Matthew D. McCluskey, Chris G. Van de Walle Tutorial: Defects in semiconductorsâ€”Combining experiment and theory published pages: 181101, ISSN: 0021-8979, DOI: 10.1063/1.4948245	Journal of Applied Physics 119/18	2019-07-23
2016	Cyrus E. Dreyer, Audrius Alkauskas, John L. Lyons, James S. Speck, Chris G. Van de Walle Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters published pages: 141101, ISSN: 0003-6951, DOI: 10.1063/1.4942674	Applied Physics Letters 108/14	2019-07-23
2017	Ymir K. Frodason, Klaus M. Johansen, Tor S. BjÃ¸rheim, Bengt G. Svensson, and Audrius Alkauskas Zn vacancy as a polaronic hole trap in ZnO published pages: , ISSN: 2469-9950, DOI: 10.1103/PhysRevB.95.094105	Physical Review B 95/9	2019-07-23
2016	Audrius Alkauskas, Cyrus E. Dreyer, John L. Lyons, Chris G. Van de Walle Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors published pages: 201304, ISSN: 2469-9950, DOI: 10.1103/PhysRevB.93.201304	Physical Review B 93/20	2019-07-23
2018	Y. K. Frodason, K. M. Johansen, T. S. BjÃ¸rheim, B. G. Svensson, A. Alkauskas Zn vacancy-donor impurity complexes in ZnO published pages: , ISSN: 2469-9950, DOI: 10.1103/PhysRevB.97.104109	Physical Review B 97/10	2019-07-23
2017	Jimmy-Xuan Shen, Darshana Wickramaratne, Cyrus E. Dreyer, Audrius Alkauskas, Erin Young, James S. Speck, Chris G. Van de Walle Calcium as a nonradiative recombination center in InGaN published pages: 21001, ISSN: 1882-0778, DOI: 10.7567/APEX.10.021001	Applied Physics Express 10/2	2019-07-23
2016	Darshana Wickramaratne, Jimmy-Xuan Shen, Cyrus E. Dreyer, Manuel Engel, Martijn Marsman, Georg Kresse, Saulius MarcinkeviÄius, Audrius Alkauskas, Chris G. Van de Walle Iron as a source of efficient Shockley-Read-Hall recombination in GaN published pages: 162107, ISSN: 0003-6951, DOI: 10.1063/1.4964831	Applied Physics Letters 109/16	2019-07-23
2017	J. L. Lyons, A. Alkauskas, A. Janotti, C. G. Van de Walle Deep donor state of the copper acceptor as a source of green luminescence in ZnO published pages: 42101, ISSN: 0003-6951, DOI: 10.1063/1.4995404	Applied Physics Letters 111/4	2019-07-23
2019	Y. K. Frodason, K. M. Johansen, A. Alkauskas, L. Vines Negative- U and polaronic behavior of the Zn-O divacancy in ZnO published pages: , ISSN: 2469-9950, DOI: 10.1103/physrevb.99.174106	Physical Review B 99/17	2019-07-23
2018	Darshana Wickramaratne, Cyrus E. Dreyer, Bartomeu Monserrat, Jimmy-Xuan Shen, John L. Lyons, Audrius Alkauskas, Chris G. Van de Walle Defect identification based on first-principles calculations for deep level transient spectroscopy published pages: 192106, ISSN: 0003-6951, DOI: 10.1063/1.5047808	Applied Physics Letters 113/19	2019-07-23

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