Nanonets2Sense
Nanonets2Sense
Total Cost €
0EC-Contrib. €
0Partnership
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Project "Nanonets2Sense" data sheet
The following table provides information about the project.
| Coordinator |
INSTITUT POLYTECHNIQUE DE GRENOBLE
Organization address contact info |
| Coordinator Country | France [FR] |
| Project website | http://www.nanonets2sense.eu/ |
| Total cost | 2˙195˙000 € |
| EC max contribution | 2˙195˙000 € (100%) |
| Programme |
1. H2020-EU.2.1.1. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT)) |
| Code Call | H2020-ICT-2015 |
| Funding Scheme | RIA |
| Starting year | 2016 |
| Duration (year-month-day) | from 2016-02-01 to 2019-03-31 |
Partnership
Take a look of project's partnership.
| # | ||||
|---|---|---|---|---|
| 1 | INSTITUT POLYTECHNIQUE DE GRENOBLE | FR (GRENOBLE CEDEX 1) | coordinator | 625˙000.00 |
| 2 | KUNGLIGA TEKNISKA HOEGSKOLAN | SE (STOCKHOLM) | participant | 532˙500.00 |
| 3 | AMS AG | AT (UNTERPREMSTAETTEN) | participant | 487˙500.00 |
| 4 | AMS SENSORS UK LIMITED | UK (CAMBRIDGE) | participant | 475˙000.00 |
| 5 | INSTITUT SINANO ASSOCIATION | FR (Grenoble) | participant | 75˙000.00 |
Map
Project objective
Nanonets2Sense proposes a new technological approach, where random networks of nanowires, called nanonets (NN), allow biosensors for medical applications to be integrated at low cost with a 3D integration scheme. The final objective of the project is to demonstrate 3D above-IC integration of nanonet-based sensing devices on a CMOS platform. By using nanonets as sensing material, our synergetic approach retains the advantages of nanowires (NW) properties without the associated technological burden. With a smart combination of bottom-up and top-down technologies and a low processing temperature (<400°C) compatible with CMOS integration, it allows 3D integration into a compact sensor, where the sensing element, which is exposed to breath or biofluids, is integrated above the CMOS detection circuit, which is naturally protected.
Nanonets2Sense will address all material, device and circuit issues. It will develop the integration process that allows the 3D above-IC integration of NN-based sensing devices on a CMOS platform, optimize sensor performance by engineering nanonet properties and device dimensions, analyse NN-based devices operation and performance and optimize readout accordingly, demonstrate the viability of the integration approach by fabricating a proof-of-concept integrated sensor that realizes 3D SoC integration of a NN-based sensing device with its CMOS read-out.
Nanonets2Sense is thus providing a new technological building block to enhance CMOS chip functionality with biosensing capability. It combines high performance at low cost and the impact is enhanced by the fact that the approach is generic and can be adapted to a large variety of NW and target molecules. Nanonets2Sense relies on well recognized European partners, including academic, SME and large company, which represent the whole chain from basic and applied research to foundry and products development, ensuring that exploitation will combine sounded physical concepts with industrial vision.
Deliverables
| Report on dissemination activities during second reporting period | Documents, reports | 2019-10-03 13:20:52 |
| Report on dissemination activities during first reporting period | Documents, reports | 2019-10-03 13:20:52 |
| Report on the Website structure | Websites, patent fillings, videos etc. | 2019-10-03 13:20:52 |
Take a look to the deliverables list in detail: detailed list of Nanonets2Sense deliverables.
Publications
| year | authors and title | journal | last update |
|---|---|---|---|
| 2017 |
T. Demes Croissance, assemblage et intégration collective de nanofils deZnO : Application à la biodétection published pages: , ISSN: , DOI: |
2019-10-03 | |
| 2017 |
Thomas Demes, Céline Ternon, Fanny Morisot, David Riassetto, Maxime Legallais, Hervé Roussel, Michel Langlet Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires published pages: 423-431, ISSN: 0169-4332, DOI: 10.1016/j.apsusc.2017.03.086 |
Applied Surface Science 410 | 2019-10-03 |
| 2016 |
Thomas Demes, Céline Ternon, David Riassetto, Valérie Stambouli, Michel Langlet Comprehensive study of hydrothermally grown ZnO nanowires published pages: 10652-10661, ISSN: 0022-2461, DOI: 10.1007/s10853-016-0287-8 |
Journal of Materials Science 51/23 | 2019-10-03 |
| 2016 |
F. Morisot Master thesis dissertation: Fonctionnalisation de nanonets de ZnO, pour la détection électrique d’ADN sans marquage, validée par détection de fluorescence published pages: , ISSN: , DOI: |
2019-10-03 | |
| 2016 |
F. Morisot Engineering level dissertation: Nanonets de ZnO pour la détection électrique d’acétone published pages: , ISSN: , DOI: |
2019-10-03 | |
| 2019 |
T Cazimajou, TTT Nguyen, M Legallais, M Mouis, CTernon, G Ghibaudo Low Temperature Electrical Characteristics of Si Nanonet Field Effect Transistors published pages: , ISSN: , DOI: |
Proceedings of EUROSOI-ULIS, 2019 | 2019-10-03 |
| 2016 |
Fanny MORISOT, Claudio ZULIANI, Joaquim LUQUE1, Zeeshan ALI, , Mireille MOUIS, Viet Huong NGUYEN, David MUNOZ-ROJAS, Oumayma LOURHZAL, Michael TEXIER, Thomas W. CORNELIUS, Celine TERNON ZnO based Nanowire Network for Gas Sensing Applications published pages: , ISSN: , DOI: |
Material Research Express | 2019-10-03 |
| 2018 |
Claudio Zuliani, Lisa Jerg, Alison Hart, Wolfram Simmendinger, Malick Camara, Zeeshan Ali Optimizing Paste Formulation for Improving the Performances of CMOS-Based MOx Chemiresistors Prepared by Ink-Jet Printing published pages: 774, ISSN: 2504-3900, DOI: 10.3390/proceedings2130774 |
Proceedings 2/13 | 2019-10-03 |
| 2018 |
T. Cazimajou, M. Legallais, M. Mouis, C. Ternon, B. Salem, G. Ghibaudo Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion published pages: 83-89, ISSN: 0038-1101, DOI: 10.1016/j.sse.2017.11.013 |
Solid-State Electronics 143 | 2019-10-03 |
| 2019 |
T Cazimajou, C Theodorou, M Mouis, TTT Nguyen, M Legallais, C Ternon and G Ghibaudo Low frequency noise characterization of Si Nanonet Field Effect Transistors published pages: , ISSN: , DOI: |
Proceedings of ICNF 2019 (Neufchatel, Switzerland) | 2019-10-03 |
| 2018 |
M. Legallais, T.T.T. Nguyen, M. Mouis, B. Salem, E. Robin, P. Chenevier, C. Ternon An innovative large scale integration of silicon nanowire-based field effect transistors published pages: 97-102, ISSN: 0038-1101, DOI: 10.1016/j.sse.2017.11.008 |
Solid-State Electronics 143 | 2019-10-03 |
| 2019 |
G Jayakumar, M Östling Pixel-based biosensor for enhanced control: silicon nanowires monolithically integrated with field-effect transistors in fully depleted silicon on insulator technology published pages: 225502, ISSN: 0957-4484, DOI: 10.1088/1361-6528/ab0469 |
Nanotechnology 30/22 | 2019-10-03 |
| 2016 |
Demes-Causse, T and Morisot, F and Legallais, M and Calais, A and Pernot, E and Pignot-Paintrand, I and Ternon, C and Stambouli, V. DNA grafting on silicon nanonets using an eco-friendly functionalization process based on epoxy silane published pages: , ISSN: , DOI: |
Materials Today, Proc | 2019-10-03 |
| 2019 |
G. Jayakumar, P.-E. Hellström, M. Östling Utilizing the superior etch stop quality of HfO2 in the front end of line wafer scale integration of silicon nanowire biosensors published pages: 13-20, ISSN: 0167-9317, DOI: 10.1016/j.mee.2019.03.006 |
Microelectronic Engineering 212 | 2019-10-03 |
| 2016 |
Maxime Legallais, Thi Thu Thuy Nguyen, Thibauld Cazimajou, Mireille Mouis, Bassem Salem and Céline Ternon Material Engineering of Percolating Silicon Nanowire Networks for Reliable and Efficient Electronic Devices published pages: , ISSN: , DOI: |
2019-10-03 | |
| 2019 |
Ganesh Jayakumar, Maxime Legallais, Per-Erik Hellström, Mireille Mouis, Isabelle Pignot-Paintrand, Valérie Stambouli, Céline Ternon, Mikael Östling Wafer-scale HfO 2 encapsulated silicon nanowire field effect transistor for efficient label-free DNA hybridization detection in dry environment published pages: 184002, ISSN: 0957-4484, DOI: 10.1088/1361-6528/aaffa5 |
Nanotechnology 30/18 | 2019-10-03 |
| 2018 |
Maxime LEGALLAIS Conception, étude et modélisation d’une nouvelle génération de transistors à nanofils de silicium pour applications biocapteurs published pages: , ISSN: , DOI: |
2019-10-03 | |
| 2019 |
Thi Thu Thuy Nguyen, Maxime Legallais, Fanny Morisot, Thibauld Cazimajou, Valérie Stambouli, Mireille Mouis, Bassem Salem, Céline Ternon First evidence of superiority of Si nanonet field effect transistors over multi-parallel Si nanowire ones in view of electrical DNA hybridization detection published pages: 16301, ISSN: 2053-1591, DOI: 10.1088/2053-1591/aae0d5 |
Materials Research Express 6/1 | 2019-10-03 |
| 2016 |
Morisot F., Nguyen V. H., Montemont C., Maindron T., Muñoz-Rojas D., Mouis M., Langlet M., Ternon C. Al2O3, Al doped ZnO and SnO2 encapsulation of randomly oriented ZnO nanowire networks for high performance and stable electrical devices published pages: , ISSN: , DOI: |
Nanotechnology | 2019-10-03 |
| 2018 |
Duc-Trung NGUYEN Fabrication et caractérisation de transistors à base de nanonet de silicium pour la détection électrique de l’ADN published pages: , ISSN: , DOI: |
2019-10-03 | |
| 2018 |
Muhammed Kayaharman, Maxime Legallais, Celine Ternon, Sangtak Park, Bassem Salem, Mehrdad Irannejad, Eihab Abdel-Rahman, Mustafa Yavuz Evaluation of Silicon Nanonet Field Effect Transistor as Photodiodes published pages: 124, ISSN: 2504-3900, DOI: 10.3390/ecsa-4-04925 |
Proceedings 2/3 | 2019-10-03 |
| 2016 |
Thi Thu Thuy Nguyen, Thibauld Cazimajou, Maxime Legallais, Tabassom Arjmand, Viet Huong Nguyen, Mireille Mouis, Bassem Salem, Eric Robin, and Céline Ternon Monolithic fabrication of nano-to-millimeter scale integrated transistors based on transparent and flexible silicon nanonets. published pages: , ISSN: , DOI: |
Nano Futures | 2019-10-03 |
| 2019 |
G. Ghibaudo, G. Pananakakis Analytical expression of top surface charge sensitivity in fully depleted semiconductor on insulator MOS transistor published pages: , ISSN: 2516-3914, DOI: 10.21494/iste.op.2019.0347 |
Composants nanoélectroniques 2/1 | 2019-10-03 |
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