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Nanonets2Sense

Nanonets2Sense

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EC-Contrib. €

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Partnership

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Project "Nanonets2Sense" data sheet

The following table provides information about the project.

Coordinator
INSTITUT POLYTECHNIQUE DE GRENOBLE 

Organization address
address: AVENUE FELIX VIALLET 46
city: GRENOBLE CEDEX 1
postcode: 38031
website: http://www.grenoble-inp.fr

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country France [FR]
 Project website http://www.nanonets2sense.eu/
 Total cost 2˙195˙000 €
 EC max contribution 2˙195˙000 € (100%)
 Programme 1. H2020-EU.2.1.1. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT))
 Code Call H2020-ICT-2015
 Funding Scheme RIA
 Starting year 2016
 Duration (year-month-day) from 2016-02-01   to  2019-03-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    INSTITUT POLYTECHNIQUE DE GRENOBLE FR (GRENOBLE CEDEX 1) coordinator 625˙000.00
2    KUNGLIGA TEKNISKA HOEGSKOLAN SE (STOCKHOLM) participant 532˙500.00
3    AMS AG AT (UNTERPREMSTAETTEN) participant 487˙500.00
4    AMS SENSORS UK LIMITED UK (CAMBRIDGE) participant 475˙000.00
5    INSTITUT SINANO ASSOCIATION FR (Grenoble) participant 75˙000.00

Map

 Project objective

Nanonets2Sense proposes a new technological approach, where random networks of nanowires, called nanonets (NN), allow biosensors for medical applications to be integrated at low cost with a 3D integration scheme. The final objective of the project is to demonstrate 3D above-IC integration of nanonet-based sensing devices on a CMOS platform. By using nanonets as sensing material, our synergetic approach retains the advantages of nanowires (NW) properties without the associated technological burden. With a smart combination of bottom-up and top-down technologies and a low processing temperature (<400°C) compatible with CMOS integration, it allows 3D integration into a compact sensor, where the sensing element, which is exposed to breath or biofluids, is integrated above the CMOS detection circuit, which is naturally protected.

Nanonets2Sense will address all material, device and circuit issues. It will develop the integration process that allows the 3D above-IC integration of NN-based sensing devices on a CMOS platform, optimize sensor performance by engineering nanonet properties and device dimensions, analyse NN-based devices operation and performance and optimize readout accordingly, demonstrate the viability of the integration approach by fabricating a proof-of-concept integrated sensor that realizes 3D SoC integration of a NN-based sensing device with its CMOS read-out.

Nanonets2Sense is thus providing a new technological building block to enhance CMOS chip functionality with biosensing capability. It combines high performance at low cost and the impact is enhanced by the fact that the approach is generic and can be adapted to a large variety of NW and target molecules. Nanonets2Sense relies on well recognized European partners, including academic, SME and large company, which represent the whole chain from basic and applied research to foundry and products development, ensuring that exploitation will combine sounded physical concepts with industrial vision.

 Deliverables

List of deliverables.
Report on dissemination activities during second reporting period Documents, reports 2019-10-03 13:20:52
Report on dissemination activities during first reporting period Documents, reports 2019-10-03 13:20:52
Report on the Website structure Websites, patent fillings, videos etc. 2019-10-03 13:20:52

Take a look to the deliverables list in detail:  detailed list of Nanonets2Sense deliverables.

 Publications

year authors and title journal last update
List of publications.
2017 T. Demes
Croissance, assemblage et intégration collective de nanofils deZnO : Application à la biodétection
published pages: , ISSN: , DOI:
2019-10-03
2017 Thomas Demes, Céline Ternon, Fanny Morisot, David Riassetto, Maxime Legallais, Hervé Roussel, Michel Langlet
Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires
published pages: 423-431, ISSN: 0169-4332, DOI: 10.1016/j.apsusc.2017.03.086
Applied Surface Science 410 2019-10-03
2016 Thomas Demes, Céline Ternon, David Riassetto, Valérie Stambouli, Michel Langlet
Comprehensive study of hydrothermally grown ZnO nanowires
published pages: 10652-10661, ISSN: 0022-2461, DOI: 10.1007/s10853-016-0287-8
Journal of Materials Science 51/23 2019-10-03
2016 F. Morisot
Master thesis dissertation: Fonctionnalisation de nanonets de ZnO, pour la détection électrique d’ADN sans marquage, validée par détection de fluorescence
published pages: , ISSN: , DOI:
2019-10-03
2016 F. Morisot
Engineering level dissertation: Nanonets de ZnO pour la détection électrique d’acétone
published pages: , ISSN: , DOI:
2019-10-03
2019 T Cazimajou, TTT Nguyen, M Legallais, M Mouis, CTernon, G Ghibaudo
Low Temperature Electrical Characteristics of Si Nanonet Field Effect Transistors
published pages: , ISSN: , DOI:
Proceedings of EUROSOI-ULIS, 2019 2019-10-03
2016 Fanny MORISOT, Claudio ZULIANI, Joaquim LUQUE1, Zeeshan ALI, , Mireille MOUIS, Viet Huong NGUYEN, David MUNOZ-ROJAS, Oumayma LOURHZAL, Michael TEXIER, Thomas W. CORNELIUS, Celine TERNON
ZnO based Nanowire Network for Gas Sensing Applications
published pages: , ISSN: , DOI:
Material Research Express 2019-10-03
2018 Claudio Zuliani, Lisa Jerg, Alison Hart, Wolfram Simmendinger, Malick Camara, Zeeshan Ali
Optimizing Paste Formulation for Improving the Performances of CMOS-Based MOx Chemiresistors Prepared by Ink-Jet Printing
published pages: 774, ISSN: 2504-3900, DOI: 10.3390/proceedings2130774
Proceedings 2/13 2019-10-03
2018 T. Cazimajou, M. Legallais, M. Mouis, C. Ternon, B. Salem, G. Ghibaudo
Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion
published pages: 83-89, ISSN: 0038-1101, DOI: 10.1016/j.sse.2017.11.013
Solid-State Electronics 143 2019-10-03
2019 T Cazimajou, C Theodorou, M Mouis, TTT Nguyen, M Legallais, C Ternon and G Ghibaudo
Low frequency noise characterization of Si Nanonet Field Effect Transistors
published pages: , ISSN: , DOI:
Proceedings of ICNF 2019 (Neufchatel, Switzerland) 2019-10-03
2018 M. Legallais, T.T.T. Nguyen, M. Mouis, B. Salem, E. Robin, P. Chenevier, C. Ternon
An innovative large scale integration of silicon nanowire-based field effect transistors
published pages: 97-102, ISSN: 0038-1101, DOI: 10.1016/j.sse.2017.11.008
Solid-State Electronics 143 2019-10-03
2019 G Jayakumar, M Östling
Pixel-based biosensor for enhanced control: silicon nanowires monolithically integrated with field-effect transistors in fully depleted silicon on insulator technology
published pages: 225502, ISSN: 0957-4484, DOI: 10.1088/1361-6528/ab0469
Nanotechnology 30/22 2019-10-03
2016 Demes-Causse, T and Morisot, F and Legallais, M and Calais, A and Pernot, E and Pignot-Paintrand, I and Ternon, C and Stambouli, V.
DNA grafting on silicon nanonets using an eco-friendly functionalization process based on epoxy silane
published pages: , ISSN: , DOI:
Materials Today, Proc 2019-10-03
2019 G. Jayakumar, P.-E. Hellström, M. Östling
Utilizing the superior etch stop quality of HfO2 in the front end of line wafer scale integration of silicon nanowire biosensors
published pages: 13-20, ISSN: 0167-9317, DOI: 10.1016/j.mee.2019.03.006
Microelectronic Engineering 212 2019-10-03
2016 Maxime Legallais, Thi Thu Thuy Nguyen, Thibauld Cazimajou, Mireille Mouis, Bassem Salem and Céline Ternon
Material Engineering of Percolating Silicon Nanowire Networks for Reliable and Efficient Electronic Devices
published pages: , ISSN: , DOI:
2019-10-03
2019 Ganesh Jayakumar, Maxime Legallais, Per-Erik Hellström, Mireille Mouis, Isabelle Pignot-Paintrand, Valérie Stambouli, Céline Ternon, Mikael Östling
Wafer-scale HfO 2 encapsulated silicon nanowire field effect transistor for efficient label-free DNA hybridization detection in dry environment
published pages: 184002, ISSN: 0957-4484, DOI: 10.1088/1361-6528/aaffa5
Nanotechnology 30/18 2019-10-03
2018 Maxime LEGALLAIS
Conception, étude et modélisation d’une nouvelle génération de transistors à nanofils de silicium pour applications biocapteurs
published pages: , ISSN: , DOI:
2019-10-03
2019 Thi Thu Thuy Nguyen, Maxime Legallais, Fanny Morisot, Thibauld Cazimajou, Valérie Stambouli, Mireille Mouis, Bassem Salem, Céline Ternon
First evidence of superiority of Si nanonet field effect transistors over multi-parallel Si nanowire ones in view of electrical DNA hybridization detection
published pages: 16301, ISSN: 2053-1591, DOI: 10.1088/2053-1591/aae0d5
Materials Research Express 6/1 2019-10-03
2016 Morisot F., Nguyen V. H., Montemont C., Maindron T., Muñoz-Rojas D., Mouis M., Langlet M., Ternon C.
Al2O3, Al doped ZnO and SnO2 encapsulation of randomly oriented ZnO nanowire networks for high performance and stable electrical devices
published pages: , ISSN: , DOI:
Nanotechnology 2019-10-03
2018 Duc-Trung NGUYEN
Fabrication et caractérisation de transistors à base de nanonet de silicium pour la détection électrique de l’ADN
published pages: , ISSN: , DOI:
2019-10-03
2018 Muhammed Kayaharman, Maxime Legallais, Celine Ternon, Sangtak Park, Bassem Salem, Mehrdad Irannejad, Eihab Abdel-Rahman, Mustafa Yavuz
Evaluation of Silicon Nanonet Field Effect Transistor as Photodiodes
published pages: 124, ISSN: 2504-3900, DOI: 10.3390/ecsa-4-04925
Proceedings 2/3 2019-10-03
2016 Thi Thu Thuy Nguyen, Thibauld Cazimajou, Maxime Legallais, Tabassom Arjmand, Viet Huong Nguyen, Mireille Mouis, Bassem Salem, Eric Robin, and Céline Ternon
Monolithic fabrication of nano-to-millimeter scale integrated transistors based on transparent and flexible silicon nanonets.
published pages: , ISSN: , DOI:
Nano Futures 2019-10-03
2019 G. Ghibaudo, G. Pananakakis
Analytical expression of top surface charge sensitivity in fully depleted semiconductor on insulator MOS transistor
published pages: , ISSN: 2516-3914, DOI: 10.21494/iste.op.2019.0347
Composants nanoélectroniques 2/1 2019-10-03

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