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DOPING-ON-DEMAND SIGNED

Doping on Demand: precise and permanent control of the Fermi level in nanocrystal assemblies

Total Cost €

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EC-Contrib. €

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Partnership

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Project "DOPING-ON-DEMAND" data sheet

The following table provides information about the project.

Coordinator
TECHNISCHE UNIVERSITEIT DELFT 

Organization address
address: STEVINWEG 1
city: DELFT
postcode: 2628 CN
website: www.tudelft.nl

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Netherlands [NL]
 Project website http://www.tudelft.nl/cheme/houtepengroup
 Total cost 1˙497˙842 €
 EC max contribution 1˙497˙842 € (100%)
 Programme 1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC))
 Code Call ERC-2015-STG
 Funding Scheme ERC-STG
 Starting year 2016
 Duration (year-month-day) from 2016-01-01   to  2020-12-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    TECHNISCHE UNIVERSITEIT DELFT NL (DELFT) coordinator 1˙497˙842.00

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 Project objective

The aim of the work proposed here is to develop a completely new method to electronically dope assemblies of semiconductor nanocrystals (a.k.a quantum dots, QDs), and porous semiconductors in general. External dopants are added on demand in the form of electrolyte ions in the voids between QDs. These ions will be introduced via electrochemical charge injection, and will subsequently be immobilized by (1) freezing the electrolyte solvent at room temperature or (2) chemically linking the ions to ligands on the QD surface, or by a combination of both. Encapsulating doped QD films using atomic layer deposition will provide further stability. This will result in stable doped nanocrystal assemblies with a constant Fermi level that is controlled by the potential set during electrochemical charging.

QDs are small semiconductor crystals with size-tunable electronic properties that are considered promising materials for a range of opto-electronic applications. Electronic doping of QDs remains a big challenge even after two decades of research into this area. At the same time it is highly desired to dope QDs in a controlled way for applications such as LEDs, FETs and solar cells. This research project will provide unprecedented control over the doping level in QD films and will provided a major step in the optimization of optoelectronic devices based on QDs. The “Doping-on-Demand” approach will be exploited to develop degenerately doped, low-threshold QD lasers that can be operated under continuous wave excitation, and QD laser diodes that use electrical injection of charge carriers. The precise control of the Fermi-level will further be used to optimize pin junction QD solar cells and to develop, for the first time, QD pn junction solar cells with precise control over the Fermi levels.

 Publications

year authors and title journal last update
List of publications.
2017 Ward van der Stam, Solrun Gudjonsdottir, Wiel H. Evers, Arjan J. Houtepen
Switching between Plasmonic and Fluorescent Copper Sulfide Nanocrystals
published pages: 13208-13217, ISSN: 0002-7863, DOI: 10.1021/jacs.7b07788
Journal of the American Chemical Society 139/37 2019-06-19
2018 Gianluca Grimaldi, Ryan W. Crisp, Stephanie ten Brinck, Felipe Zapata, Michiko van Ouwendorp, Nicolas Renaud, Nicholas Kirkwood, Wiel H. Evers, Sachin Kinge, Ivan Infante, Laurens D. A. Siebbeles, Arjan J. Houtepen
Hot-electron transfer in quantum-dot heterojunction films
published pages: , ISSN: 2041-1723, DOI: 10.1038/s41467-018-04623-9
Nature Communications 9/1 2019-06-19
2018 Frank C. M. Spoor, Gianluca Grimaldi, Christophe Delerue, Wiel H. Evers, Ryan W. Crisp, Pieter Geiregat, Zeger Hens, Arjan J. Houtepen, Laurens D. A. Siebbeles
Asymmetric Optical Transitions Determine the Onset of Carrier Multiplication in Lead Chalcogenide Quantum Confined and Bulk Crystals
published pages: 4796-4802, ISSN: 1936-0851, DOI: 10.1021/acsnano.8b01530
ACS Nano 12/5 2019-06-19
2018 Solrun Gudjonsdottir, Ward van der Stam, Nicholas Kirkwood, Wiel H. Evers, Arjan J. Houtepen
The Role of Dopant Ions on Charge Injection and Transport in Electrochemically Doped Quantum Dot Films
published pages: 6582-6590, ISSN: 0002-7863, DOI: 10.1021/jacs.8b01347
Journal of the American Chemical Society 140/21 2019-06-19
2018 Ryan W. Crisp, Gianluca Grimaldi, Luca De Trizio, Wiel H. Evers, Nicholas Kirkwood, Sachin Kinge, Liberato Manna, Laurens D. A. Siebbeles, Arjan J. Houtepen
Selective antimony reduction initiating the nucleation and growth of InSb quantum dots
published pages: 11110-11116, ISSN: 2040-3364, DOI: 10.1039/C8NR02381F
Nanoscale 10/23 2019-06-19
2017 Arjan J. Houtepen, Zeger Hens, Jonathan S. Owen, Ivan Infante
On the Origin of Surface Traps in Colloidal II–VI Semiconductor Nanocrystals
published pages: 752-761, ISSN: 0897-4756, DOI: 10.1021/acs.chemmater.6b04648
Chemistry of Materials 29/2 2019-06-19
2017 Francesca Pietra, Nicholas Kirkwood, Luca De Trizio, Anne W. Hoekstra, Lennart Kleibergen, Nicolas Renaud, Rolf Koole, Patrick Baesjou, Liberato Manna, Arjan J. Houtepen
Ga for Zn Cation Exchange Allows for Highly Luminescent and Photostable InZnP-Based Quantum Dots
published pages: 5192-5199, ISSN: 0897-4756, DOI: 10.1021/acs.chemmater.7b00848
Chemistry of Materials 29/12 2019-06-19

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