Explore the words cloud of the PHASE-CHANGE SWITCH project. It provides you a very rough idea of what is the project "PHASE-CHANGE SWITCH" about.
The following table provides information about the project.
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
|Coordinator Country||Switzerland [CH]|
|Total cost||3˙883˙412 €|
|EC max contribution||3˙883˙412 € (100%)|
1. H2020-EU.1.2.1. (FET Open)
|Duration (year-month-day)||from 2017-01-01 to 2020-06-30|
Take a look of project's partnership.
|1||ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE||CH (LAUSANNE)||coordinator||658˙750.00|
|2||GESELLSCHAFT FUR ANGEWANDTE MIKRO UND OPTOELEKTRONIK MIT BESCHRANKTERHAFTUNG AMO GMBH||DE (AACHEN)||participant||782˙375.00|
|3||THE CHANCELLOR MASTERS AND SCHOLARSOF THE UNIVERSITY OF CAMBRIDGE||UK (CAMBRIDGE)||participant||655˙000.00|
|4||IBM RESEARCH GMBH||CH (RUESCHLIKON)||participant||612˙412.00|
|5||MAX-PLANCK-GESELLSCHAFT ZUR FORDERUNG DER WISSENSCHAFTEN EV||DE (MUENCHEN)||participant||593˙625.00|
|6||THALES SA||FR (COURBEVOIE)||participant||581˙250.00|
The proposal PHASE-CHANGE SWITCH addresses the need for combined energy efficiency and extended functionality with the engineering of new classes of solid-state Beyond CMOS switches exploiting the abrupt phase-change (Metal-Insulator-Transition - MIT) in materials and at temperatures that make them interesting for electronic circuits and systems by their performance, energy efficiency and scalability. The proposal includes disruptive research contributions on the whole value chain, from novel phase-change materials to new device and circuit architectures together with their scaling and integration on silicon and GaN platforms. On materials alloying and straining techniques in phase-change systems are used for the engineering of the transition temperature and the ON and OFF bandgaps (conductivity) of VO2. A significant advance is the three-terminal energy efficient phase-change electronic switch with deep-sub-thermionic average slope (<10mV/decade at room temperature), operating at sub-0.5V voltage supply, with ON current better than silicon MOSFET and OFF current comparable with tunnel FETs, surpassing the state-of-the-art. The proposal focuses on smart design and exploitation of the unique properties of the phase-change VO2 beyond CMOS switches, by targeting with the same technology platform: (i) von-Neumann steep-slope logic devices and circuits, to extend CMOS with novel functionality and energy efficiency, (ii) uniquely reconfigurable energy efficient radio-frequency (RF) circuit functions from 1 to 100GHz, (iii) unconventional scalable neuristors exploiting the hysteretic RC switching behaviour for neuromorphic computation, and, (iv) disruptive classes of solid-state ionitronic devices for neuromorphic computation, exploiting non-volatile memory effects. The proposed research is expected to create new applications and markets and reinforce the leadership of European industrial players in the field of energy efficient IoT and high frequency communications.
|Data management plan||Open Research Data Pilot||2020-01-22 12:05:01|
|Website, project press release and flyer||Websites, patent fillings, videos etc.||2020-01-22 12:05:00|
|Report on fundamental calculations: VO2 and V2O3 systems and band gap of NbO2||Documents, reports||2020-01-22 12:05:00|
|Two-terminal steep-slope MIT switches||Documents, reports||2020-01-22 12:05:00|
|Design and fabrication of coupled relaxation oscillators from MHz to GHz||Documents, reports||2020-01-22 12:05:00|
|Three-terminal steep-slope MIT switches.||Documents, reports||2020-01-22 12:05:00|
|Report on the optimization of the three deposition processes||Documents, reports||2020-01-22 12:05:00|
|Report on band gaps of Alloyed (V,metal)O2 systems||Documents, reports||2020-01-22 12:05:00|
|Design and simulation of VO2 RF switches and circuit applications||Documents, reports||2020-01-22 12:05:00|
Take a look to the deliverables list in detail: detailed list of PHASE-CHANGE SWITCH deliverables.
|year||authors and title||journal||last update|
Elisabetta Corti, Bernd Gotsmann, Kirsten Moselund, Adrian M. Ionescu, John Robertson, Siegfried Karg
Scaled resistively-coupled VO2 oscillators for neuromorphic computing
published pages: 107729, ISSN: 0038-1101, DOI: 10.1016/j.sse.2019.107729
Zhaofu Zhang, Jiaqi Chen, Yuzheng Guo, John Robertson
Band alignment calculation of dielectric films on VO2
published pages: 111057, ISSN: 0167-9317, DOI: 10.1016/j.mee.2019.111057
|Microelectronic Engineering 216||2020-02-06|
Andrei A. Muller, Alin Moldoveanu, Victor Asavei, Riyaz A. Khadar, Esther Sanabria-Codesal, Anna Krammer, Montserrat Fernandez-BolaÃ±os, Matteo Cavalieri, Junrui Zhang, Emanuele Casu, Andreas Schuler, Adrian M. Ionescu
3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors
published pages: , ISSN: 2045-2322, DOI: 10.1038/s41598-019-54600-5
|Scientific Reports 9/1||2020-02-04|
Haichang Lu, John Robertson
Density Functional Theory Studies of the Metalâ€“Insulator Transition in Vanadium Dioxide Alloys
published pages: 1900210, ISSN: 0370-1972, DOI: 10.1002/pssb.201900210
|physica status solidi (b) 256/12||2020-02-04|
Emanuele Andrea Casu, Nicolo Oliva, Matteo Cavalieri, Andrei A. Muller, Alessandro Fumarola, Wolfgang A. Vitale, Anna Krammer, Andreas Schuler, Montserrat Fernandez-Bolanos, Adrian M. Ionescu
Tunable RF Phase Shifters Based on Vanadium Dioxide Metal Insulator Transition
published pages: 965-971, ISSN: 2168-6734, DOI: 10.1109/jeds.2018.2837869
|IEEE Journal of the Electron Devices Society 6||2020-01-22|
Anna Krammer, Arnaud Magrez, Wolfgang A. Vitale, Piotr Mocny, Patrick Jeanneret, Edouard Guibert, Harry J. Whitlow, Adrian M. Ionescu, Andreas SchÃ¼ler
Elevated transition temperature in Ge doped VO 2 thin films
published pages: 45304, ISSN: 0021-8979, DOI: 10.1063/1.4995965
|Journal of Applied Physics 122/4||2020-01-22|
Emanuele Andrea Casu, Andrei A. Muller, Matteo Cavalieri, Alessandro Fumarola, Adrian Mihai Ionescu, Montserrat Fernandez-Bolanos
A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition
published pages: 795-797, ISSN: 1531-1309, DOI: 10.1109/lmwc.2018.2854961
|IEEE Microwave and Wireless Components Letters 28/9||2020-01-22|
Emanuele Andrea Casu, Andrei A. Muller, Montserrat Fernandez-Bolanos, Alessandro Fumarola, Anna Krammer, Andreas Schuler, Adrian M. Ionescu
Vanadium Oxide Bandstop Tunable Filter for Ka Frequency Bands Based on a Novel Reconfigurable Spiral Shape Defected Ground Plane CPW
published pages: 12206-12212, ISSN: 2169-3536, DOI: 10.1109/access.2018.2795463
|IEEE Access 6||2020-01-22|
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