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Synergistic Resistive Switching of Perovskite and Silicon Carbide materials for Advanced ReRAM micro Devices

Total Cost €


EC-Contrib. €






 PerovSiC project word cloud

Explore the words cloud of the PerovSiC project. It provides you a very rough idea of what is the project "PerovSiC" about.

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Project "PerovSiC" data sheet

The following table provides information about the project.


Organization address
address: RUE MICHEL ANGE 3
city: PARIS
postcode: 75794

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country France [FR]
 Total cost 185˙076 €
 EC max contribution 185˙076 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2016
 Funding Scheme MSCA-IF-EF-ST
 Starting year 2017
 Duration (year-month-day) from 2017-07-01   to  2019-10-20


Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 


 Project objective

Perovskite oxides are one of the most promising materials for developing new ReRAM devices, because they show a Resistive Switching (RS) behaviour and multilevel (ML) storage properties through reversible nanoionics redox phenomena. However, several challenges remain to be addressed before introducing them in the emerging memories market. From a material point of view, it is still unclear how to tune and control the mass transport properties at the nanoscale to get the best resistive switch response. From a device point of view, the development of new heterostructures thermally and chemically stable and compatible with the microelectronics technology is required. The ‘PerovSiC’ project combines synergistically perovskite and carbide materials to overcome the current constraints. Starting from the recent breakthroughs of the hosting group, the project focuses on understanding the RS behaviour in perovskites using physical and chemical cutting-edge characterization methods. Further, computational modeling will allow improving the RS process in the new carbide-based heterostructures. The final optimized configuration will be integrated in a highly stable ML ReRAM device. The results of the project will lead to unexpected breakthroughs for neuromorphic computation, memories and logic devices. The multidisciplinary approach proposed will allow the researcher candidate gaining a deep understanding and specialisation in material science - acquiring new competences in advanced techniques, such as XPEEM and operando Raman - and in Key Enabling Technologies, such as micro-technology. Moreover, the collaboration with the ENSC-Lille and the Institute Néel will complement the researcher’s training giving her unique skills in IEDP-ToF-SIMS and synchrotron measurements. Therefore, planned research and training activities in the ‘PerovSiC’ project will re-enforce a position of professional maturity in research and will provide the researcher new career perspectives.


year authors and title journal last update
List of publications.
2019 Benjamin Meunier, Dolors Pla, Raquel Rodriguez-Lamas, Michel Boudard, Odette Chaix-Pluchery, Eugénie Martinez, Nicolas Chevalier, Carmen Jiménez, Mónica Burriel, Olivier Renault
Microscopic Mechanisms of Local Interfacial Resistive Switching in LaMnO 3+δ
published pages: 675-683, ISSN: 2637-6113, DOI: 10.1021/acsaelm.9b00030
ACS Applied Electronic Materials 1/5 2020-04-24
2019 Raquel Rodriguez-Lamas, Dolors Pla, Odette Chaix-Pluchery, Benjamin Meunier, Fabrice Wilhelm, Andrei Rogalev, Laetitia Rapenne, Xavier Mescot, Quentin Rafhay, Hervé Roussel, Michel Boudard, Carmen Jiménez, Mónica Burriel
Integration of LaMnO 3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD
published pages: 389-398, ISSN: 2190-4286, DOI: 10.3762/bjnano.10.38
Beilstein Journal of Nanotechnology 10 2020-04-24
2019 Benjamin Meunier, Eugénie Martinez, Raquel Rodriguez-Lamas, Dolors Pla, Mònica Burriel, Michel Boudard, Carmen Jiménez, Jean-Pascal Rueff, Olivier Renault
Resistive switching in a LaMnO 3 + δ /TiN memory cell investigated by operando hard X-ray photoelectron spectroscopy
published pages: 225302, ISSN: 0021-8979, DOI: 10.1063/1.5125420
Journal of Applied Physics 126/22 2020-04-24
2017 Dolors Pla, Carmen Jimenez, Mónica Burriel
Engineering of Functional Manganites Grown by MOCVD for Miniaturized Devices
published pages: 1600974, ISSN: 2196-7350, DOI: 10.1002/admi.201600974
Advanced Materials Interfaces 4/8 2020-04-24

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