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Modeling critical reliability issues in VLSI technologies beyond 2020

Total Cost €


EC-Contrib. €






 MoCRIV project word cloud

Explore the words cloud of the MoCRIV project. It provides you a very rough idea of what is the project "MoCRIV" about.

vlsi    expose    channel    experimentally    fin    energetic    variability    reliability    unifying    2020    driving    instability    paid    material    consistently    dielectrics    time    model    core    computational    description    self    engineering    carrier    plan    activation    deactivation    specifics    alloys    topology    valuable    defects    parasitic    oxide    framework    training    skills    perspectives    gate    chemistry    forces    physical    dependent    microscopic    simulation    hence    validation    carriers    special    modeling    materials    defect    nanowire    device    building    physics    put    interdisciplinary    paradigm    interface    circuit    mobility    activated    bias    sige    determined    individual    transistors    phenomena    degradation    validated    precursors    nanoscale    broadening    industry    industrial    electrical    hot    ge    capture    acquired    effect    expertise    fundamental    suggested    heating    career    centric    temperature    science    professional    architectures   

Project "MoCRIV" data sheet

The following table provides information about the project.


Organization address
address: KAPELDREEF 75
city: LEUVEN
postcode: 3001

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Belgium [BE]
 Total cost 172˙800 €
 EC max contribution 172˙800 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2017
 Funding Scheme MSCA-IF-EF-ST
 Starting year 2018
 Duration (year-month-day) from 2018-08-22   to  2020-08-21


Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 


 Project objective

This proposal presents an interdisciplinary, forward looking, training-by-research plan in the field of physical reliability modeling of emerging transistors and materials beyond 2020. Its main goal is development and validation of a simulation framework which self-consistently considers the main reliability phenomena including bias temperature instability, hot-carrier degradation, and self-heating. These effects were suggested to be the response of interface and oxide defects/precursors which can be activated by different driving forces determined by device operating conditions and specifics of the device topology. Thus, the core of this project will be put on a detailed microscopic description of the properties of defects/precursors, which will be studied experimentally and theoretically. Within this defect-centric paradigm we will address reliability issues in devices with emerging architectures, i.e. fin and nanowire transistors, high-k gate dielectrics, and high mobility channel materials such as SiGe, Ge, and III-V alloys. The unifying model building on the microscopic defect properties will be validated over a wide range of device bias conditions. We will capture the parasitic effect of self-heating which has a strong impact on the energetic distribution of hot carriers and hence on hot-carrier degradation. Special attention will be paid to time-dependent variability of device characteristics which is a response of nanoscale devices on activation/deactivation of individual defects. Knowledge acquired within this project will be valuable for applied and fundamental physics, material science, computational chemistry, electrical engineering, VLSI technology, and circuit design. The research and training activities will enhance applicant’s future career by broadening his professional skills and expertise, expose him to industrial requirements, and open new perspectives for future collaboration with industry.

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The information about "MOCRIV" are provided by the European Opendata Portal: CORDIS opendata.

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lastchecktime (2020-12-02 9:17:17) correctly updated