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QUEFORMAL SIGNED

Quantum Engineering for Machine Learning

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Project "QUEFORMAL" data sheet

The following table provides information about the project.

Coordinator
UNIVERSITA DI PISA 

Organization address
address: LUNGARNO PACINOTTI 43/44
city: PISA
postcode: 56126
website: www.unipi.it

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Italy [IT]
 Total cost 2˙988˙740 €
 EC max contribution 2˙988˙740 € (100%)
 Programme 1. H2020-EU.1.2.1. (FET Open)
 Code Call H2020-FETOPEN-2018-2019-2020-01
 Funding Scheme RIA
 Starting year 2019
 Duration (year-month-day) from 2019-01-01   to  2021-12-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    UNIVERSITA DI PISA IT (PISA) coordinator 658˙000.00
2    ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE CH (LAUSANNE) participant 587˙790.00
3    GESELLSCHAFT FUR ANGEWANDTE MIKRO UND OPTOELEKTRONIK MIT BESCHRANKTERHAFTUNG AMO GMBH DE (AACHEN) participant 587˙500.00
4    UNIVERSITAET DER BUNDESWEHR MUENCHEN DE (NEUBIBERG) participant 549˙500.00
5    QUANTAVIS SRL IT (LIVORNO) participant 343˙450.00
6    CONSIGLIO NAZIONALE DELLE RICERCHE IT (ROMA) participant 262˙500.00

Map

 Project objective

We propose the radical vision of a new integrated circuit technology for machine learning where low-voltage field-effect transistors and non-volatile memories are integrated next to each other exploiting quantum engineering of heterostructures of two-dimensional materials (2DMs), i.e. the atom-by-atom design and fabrication of devices which combine vertical and lateral heterostructures (VH and LH, respectively) of 2DMs.

QUEFORMAL pursues a very risky and original proposed solution, with the extremely high potential gain of advancing a science-enabled technology for the fabrication of integrated circuits for machine learning, in a field in which Europe has a strong basic-science leadership, thanks to the pioneering breakthroughs on graphene and 2D materials.

The overall objective and targeted breakthrough of QUEFORMAL is to experimentally demonstrate the fabrication and operation of devices based on LH and VH of 2DMs for logic-in-memory integrated circuits and to show the potential of this technology for the fabrication of integrated circuits for machine learning. Devices include i) lateral heterostructure FETs (LH-FETs) operating at low voltage (0.6 V) fabricated in close vicinity to ii) floating-gate non-volatile memories based on VHs for the gate stack and LHs for the channel (LVH-NVMs), that can be programmed at low voltage (<5 V) with retention time larger than 1 month.

The QUEFORMAL consortium consists of six partners and has unique advantages: Consortium members have proposed and patented the LH-FET concept and have experimentally demonstrated the floating gate non-volatile memory concept using 2D materials.

 Publications

year authors and title journal last update
List of publications.
2019 Sajedeh Manzeli, Dumitru Dumcenco, Guilherme Migliato Marega, Andras Kis
Self-sensing, tunable monolayer MoS2 nanoelectromechanical resonators
published pages: , ISSN: 2041-1723, DOI: 10.1038/s41467-019-12795-1
Nature Communications 10/1 2020-03-05
2019 Giovanni Barcaro, Alessandro Fortunelli
2D oxides on metal materials: concepts, status, and perspectives
published pages: 11510-11536, ISSN: 1463-9076, DOI: 10.1039/c9cp00972h
Physical Chemistry Chemical Physics 21/22 2020-03-04

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The information about "QUEFORMAL" are provided by the European Opendata Portal: CORDIS opendata.

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