CONAT

Conduction Mechanisms in Advanced MOS Technologies

Coordinatore	TECHNION - ISRAEL INSTITUTE OF TECHNOLOGY    more  Organization address address: TECHNION CITY - SENATE BUILDING city: HAIFA postcode: 32000 contact info Titolo: Mr. Nome: Mark Cognome: Davison Email: send email Telefono: +972 4 829 3097 Fax: +972 4 823 2958
Nazionalità Coordinatore	Israel [IL]
Totale costo	250˙106 €
EC contributo	250˙106 €
Programma	FP7-PEOPLE Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)
Code Call	FP7-PEOPLE-2011-IIF
Funding Scheme	MC-IIF
Anno di inizio	2012
Periodo (anno-mese-giorno)	2012-09-01   -   2014-08-31

 Partecipanti

#	participant	country	role	EC contrib. [€]
1	TECHNION - ISRAEL INSTITUTE OF TECHNOLOGY  Organization address address: TECHNION CITY - SENATE BUILDING city: HAIFA postcode: 32000 contact info Titolo: Mr. Nome: Mark Cognome: Davison Email: send email Telefono: +972 4 829 3097 Fax: +972 4 823 2958	IL (HAIFA)	coordinator	250˙106.00

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 Obiettivo del progetto (Objective)

'Silicon-based technologies are approaching their physical limits, and technology breakthroughs, in terms of materials and processes, will be required as device sizes reach the nano-scale frontier. To face these challenges, a new generation of devices based on a clever combination of selected materials is currently under consideration worldwide. The aim of this project is to investigate the conduction mechanisms, in connection with degradation and breakdown characteristics, of Metal Gate/High-K structures on III-V substrates intended for applications in future MOS transistors. This aspect is primary obstacle to the successful incorporation into mainstream semiconductor process. To the date, no systematic study about these topics in such advanced structures has been carried out. The project covers all aspect of conduction in the MG/HK/III-V stacks, fresh, stressed and, finally the breakdown event and the conduction over the degraded stacks. The electrical characterization will provide relevant information to contribute to the elaboration of models that are able to predict the life time of devices more accurately. Leading the transition to advance electronics is a challenge for applied research as it requires specific technologies platforms. That is actually why this proposal is highly interesting. This research project would contribute to achieve excellence in the filed and consequently would attract the interest of the industrial sector of the EU. This proposal aims to define advantages and constrains of advance MG/HK/III-V stacks since they will play a relevant role in the next generation of CMOS manufacture process'