MPIS-FET

Metal-Piezoelectric-Insulator-Semiconductor Field-Effect-Transistor for high temperature pressure sensing applications

 Coordinatore ASTON UNIVERSITY 

 Organization address address: ASTON TRIANGLE
city: BIRMINGHAM
postcode: B4 7ET

contact info
Titolo: Dr.
Nome: Haitao
Cognome: Ye
Email: send email
Telefono: 4401210000000

 Nazionalità Coordinatore United Kingdom [UK]
 Totale costo 278˙807 €
 EC contributo 278˙807 €
 Programma FP7-PEOPLE
Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)
 Code Call FP7-PEOPLE-2011-IIF
 Funding Scheme MC-IIF
 Anno di inizio 2014
 Periodo (anno-mese-giorno) 2014-03-11   -   2016-03-10

 Partecipanti

# participant  country  role  EC contrib. [€] 
1    ASTON UNIVERSITY

 Organization address address: ASTON TRIANGLE
city: BIRMINGHAM
postcode: B4 7ET

contact info
Titolo: Dr.
Nome: Haitao
Cognome: Ye
Email: send email
Telefono: 4401210000000

UK (BIRMINGHAM) coordinator 278˙807.40

Mappa


 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

gt    sensor    insulator    automotive    specializing    sensors    poor    temperature    effect    piezoelectric    pressure    world    transistor    power    metal    diamond    aerospace    sensitivity    semiconductor   

 Obiettivo del progetto (Objective)

'This project, entitled ‘Metal-Piezoelectric-Insulator-Semiconductor Field-Effect-Transistor’ (MPIS-FET), will fabricate a metal-piezoelectric-insulator-semiconductor field-effect-transistor device for pressure sensing, in order to perform high-sensitivity strain detection (gauge factor>100) under harsh conditions (high temperature>500oC). High-temperature pressure sensors are of extreme importance for automotive, aerospace, aircraft, power generation industry, and scientific instruments. The current pressure sensors suffer from various drawbacks such as poor thermal stability, low sensitivity, poor chemical inertness, high complexity in readout circuit, and high cost.

This project will bring a very talented researcher (Dr Meiyong Liao) from one of the world leading research institutes (National Institute for Materials Science, NIMS, Japan), specializing in the diamond doping, etching and sensor fabrications, to work with a leading Nanoscience Research Group (NRG) at Aston University (UK), specializing in diamond sensors and power devices, with a combined expertise to address the specific challenge described above. The project will transfer the skills and knowledge from one of the world leading Japanese institutions to the Europe through the Marie Curie International Incoming Fellowship Scheme. The proposed novel pressure sensor will contribute to the aerospace, automotive, and industrial society of Europe.'

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