TI HYBRID DEVICES

Electronic Transport in Topological Insulator Hybrid Devices

 Coordinatore THE HEBREW UNIVERSITY OF JERUSALEM. 

 Organization address address: GIVAT RAM CAMPUS
city: JERUSALEM
postcode: 91904

contact info
Titolo: Ms.
Nome: Hani
Cognome: Ben-Yehuda
Email: send email
Telefono: +972 2 6586618
Fax: +972 7 22447007

 Nazionalità Coordinatore Israel [IL]
 Totale costo 100˙000 €
 EC contributo 100˙000 €
 Programma FP7-PEOPLE
Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)
 Code Call FP7-PEOPLE-2012-CIG
 Funding Scheme MC-CIG
 Anno di inizio 2013
 Periodo (anno-mese-giorno) 2013-07-01   -   2017-06-30

 Partecipanti

# participant  country  role  EC contrib. [€] 
1    THE HEBREW UNIVERSITY OF JERUSALEM.

 Organization address address: GIVAT RAM CAMPUS
city: JERUSALEM
postcode: 91904

contact info
Titolo: Ms.
Nome: Hani
Cognome: Ben-Yehuda
Email: send email
Telefono: +972 2 6586618
Fax: +972 7 22447007

IL (JERUSALEM) coordinator 100˙000.00

Mappa

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 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

serve    surface    tis    device    graphene    technique    effect    ti    transport   

 Obiettivo del progetto (Objective)

'The proposal outlines an experimental program targeted at fabricating and investigating high quality electronic devices based on Topological Insulators (TIs). The program relies on a fabrication technique based on stacking of exfoliated single crystals in an inert atmosphere. The devices proposed are few layer heterostructures including TIs, graphene, and dielectrics such as hexagonal Boron Nitride (h-BN). This technique allows for diverse types of devices, with the potential of addressing a broad range of physical effects. One such device is the TI-hBN heterostructure, which can serve as a field-effect device, where preliminary data shows an unprecedented level of tunability of a high mobility surface. These devices will allow the investigation of transport effects such the Quantum Hall Effect, the TI-superconductor proximity effect, and investigations on the role of interactions in TI surface transport. Other devices proposed are TI-graphene hybrids, where the TI can serve as a spin-injection element, and TI interfaces with materials hosting more exotic phases. The program is aimed at creating a fundamentally new set of capabilities which would open new avenues of research in condensed matter physics.'

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