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Silicon mid-infrared photodetectors

Total Cost €


EC-Contrib. €






 SMIRP project word cloud

Explore the words cloud of the SMIRP project. It provides you a very rough idea of what is the project "SMIRP" about.

mean    near    characterisation    detection    fabrication    toxic    photodiodes    reliability    demonstration    transitions    commercially    detector    containing    prototypes    demonstrated    detectors    infrared    leakage    investigator    temperatures    mercury    visible    exotic    alloys    microelectronics    band    smirp    designed    completely    selenide    made    photodetector    telluride    liquid    nitrogen    competitive    gap    validation    cadmium    materials    latest    microns    responsivities    sufficiently    regions    experimentally    responsivity    benefits    discovery    imaging    region    lasers    expensive    cerium    cooled    dominated    room    extend    performance    currents    integration    uv    europium    dominate    ytterbium    edge    arsenic    replace    earth    poc    modified    mid    silicon    mct    achievable    silamps    temperature    detectivities    commercialisation    optical    rare    detectivity    ir    grant    amplifiers    sulphide    77    enormous    thermoelectrically    15    replacing   

Project "SMIRP" data sheet

The following table provides information about the project.


Organization address
address: Stag Hill
postcode: GU2 7XH

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country United Kingdom [UK]
 Total cost 149˙967 €
 EC max contribution 149˙967 € (100%)
 Programme 1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC))
 Code Call ERC-2014-PoC
 Funding Scheme ERC-POC
 Starting year 2014
 Duration (year-month-day) from 2014-11-01   to  2016-04-30


Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    UNIVERSITY OF SURREY UK (GUILDFORD) coordinator 149˙967.00


 Project objective

The aim of this PoC proposal (SMIRP) is the fabrication, characterisation and validation of commercially competitive silicon mid-infrared (IR) photodetector prototypes, operating in the 2-15 microns range, for demonstration to commercialisation partners and designed to replace current detectors made from mercury cadmium telluride (MCT), lead sulphide, lead selenide and arsenic containing alloys. Silicon detectors currently completely dominate the UV, visible and very near-IR regions - however they do not work above 1.2 microns. Following the discovery of band edge modified rare earth optical transitions, specific to europium, ytterbium and cerium in silicon, under the current SILAMPS (Silicon Integrated Lasers and Optical Amplifiers) Advanced Investigator Grant, we have demonstrated that we can extend silicon responsivity from 1.2 microns, at the silicon band gap, out to the important mid-IR region and beyond. Experimentally the responsivities and detectivities of our latest devices now offer a real challenge to existing detector materials and devices in the 2 to 15 microns range currently dominated by more exotic and expensive materials such as MCT. Replacing these materials with silicon based detectors would offer enormous benefits in cost, reliability, performance and integration with the silicon microelectronics for detection and imaging, as well as using much less toxic materials and production processes. Low leakage currents achievable in silicon based photodiodes mean that further development of this new silicon based technology may lead to room temperature or thermoelectrically cooled detectors, replacing current detectors that have to be cooled to liquid nitrogen temperatures (77 K) to achieve sufficiently high detectivity values to be useful.


year authors and title journal last update
List of publications.
2016 Manon A. Lourenço, Mark A. Hughes, Khue T. Lai, Imran M. Sofi, Willy Ludurczak, Lewis Wong, Russell M. Gwilliam, Kevin P. Homewood
Silicon-Modified Rare-Earth Transitions-A New Route to Near- and Mid-IR Photonics
published pages: 1986-1994, ISSN: 1616-301X, DOI: 10.1002/adfm.201504662
Advanced Functional Materials 26/12 2019-07-22

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