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SMIRP SIGNED

Silicon mid-infrared photodetectors

Total Cost €

0

EC-Contrib. €

0

Partnership

0

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 SMIRP project word cloud

Explore the words cloud of the SMIRP project. It provides you a very rough idea of what is the project "SMIRP" about.

15    cooled    replacing    materials    silicon    optical    mid    microns    ir    band    mct    detectors   

Project "SMIRP" data sheet

The following table provides information about the project.

Coordinator
UNIVERSITY OF SURREY 

Organization address
address: Stag Hill
city: GUILDFORD
postcode: GU2 7XH
website: www.surrey.ac.uk

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country United Kingdom [UK]
 Total cost 149˙967 €
 EC max contribution 149˙967 € (100%)
 Programme 1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC))
 Code Call ERC-2014-PoC
 Funding Scheme /ERC-POC
 Starting year 2014
 Duration (year-month-day) from 2014-11-01   to  2016-04-30

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    UNIVERSITY OF SURREY UK (GUILDFORD) coordinator 149˙967.00

Mappa

 Project objective

The aim of this PoC proposal (SMIRP) is the fabrication, characterisation and validation of commercially competitive silicon mid-infrared (IR) photodetector prototypes, operating in the 2-15 microns range, for demonstration to commercialisation partners and designed to replace current detectors made from mercury cadmium telluride (MCT), lead sulphide, lead selenide and arsenic containing alloys. Silicon detectors currently completely dominate the UV, visible and very near-IR regions - however they do not work above 1.2 microns. Following the discovery of band edge modified rare earth optical transitions, specific to europium, ytterbium and cerium in silicon, under the current SILAMPS (Silicon Integrated Lasers and Optical Amplifiers) Advanced Investigator Grant, we have demonstrated that we can extend silicon responsivity from 1.2 microns, at the silicon band gap, out to the important mid-IR region and beyond. Experimentally the responsivities and detectivities of our latest devices now offer a real challenge to existing detector materials and devices in the 2 to 15 microns range currently dominated by more exotic and expensive materials such as MCT. Replacing these materials with silicon based detectors would offer enormous benefits in cost, reliability, performance and integration with the silicon microelectronics for detection and imaging, as well as using much less toxic materials and production processes. Low leakage currents achievable in silicon based photodiodes mean that further development of this new silicon based technology may lead to room temperature or thermoelectrically cooled detectors, replacing current detectors that have to be cooled to liquid nitrogen temperatures (77 K) to achieve sufficiently high detectivity values to be useful.

 Work performed, outcomes and results:  advancements report(s) 

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