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ASCENT SIGNED

Access to European Nanoelectronics Network

Total Cost €

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EC-Contrib. €

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Partnership

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Project "ASCENT" data sheet

The following table provides information about the project.

Coordinator
UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK 

Organization address
address: WESTERN ROAD
city: Cork
postcode: T12 YN60
website: www.ucc.ie

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Ireland [IE]
 Project website http://www.ascent.network
 Total cost 4˙698˙623 €
 EC max contribution 4˙698˙623 € (100%)
 Programme 1. H2020-EU.1.4.1.2. (Integrating and opening existing national and regional  research infrastructures of European interest)
 Code Call H2020-INFRAIA-2014-2015
 Funding Scheme RIA
 Starting year 2015
 Duration (year-month-day) from 2015-05-01   to  2019-07-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK IE (Cork) coordinator 1˙761˙452.00
2    COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES FR (PARIS 15) participant 1˙478˙001.00
3    INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM BE (LEUVEN) participant 1˙459˙170.00

Map

 Project objective

ASCENT will provide access to the world’s most advanced 10 nm and beyond-CMOS nanoelectronics data and test structures in Europe’s leading nanofabrication research institutes. The institutes involved have extensive advanced semiconductor processing fabrication facilities, flexible nanofabrication facilities, advanced electrical characterization equipment and expertise in atomistic and TCAD modeling. This will be the first time that access to these state-of-the-art devices and test structures will be available anywhere in the world. The impact of this access, and the resulting advances that will be made, will contribute significantly to competitiveness and growth capacity in the Europe’s nanoelectronics industry.

ASCENT will enable Europe’s world-leading atomic scale device, TCAD and compact modeling community to perform the systematic studies that are required to develop nanoscale design methodologies and to identify the impact of quantum effects on sub-10 nm device performance.

ASCENT provides an interface to global industrial leaders in nanoelectronics through the Industry Innovation Committee and through activities designed to transfer IP and technology uptake from the supported research activities. The results from the access activities will be fed back to device manufacturers to future improve the nanoscale devices being developed.

ASCENT will reach out to the research community through a co-ordinated marketing campaign and will offer a simple single access route to the advanced technologies provided. ASCENT will provide technical and logistical support to Users and the results of the Access activities will be published and shared at User Workshops enabling strong interaction between the Users and Providers.

ASCENT is a unique opportunity for researchers in Europe to gain access to world-leading technologies that are being developed in Europe’s leading institutes and ensure Europe remains at the forefront of global nanoelectronics development.

 Deliverables

List of deliverables.
4th ASCENT access summary report Websites, patent fillings, videos etc. 2020-04-02 11:21:37
Final Press Release Websites, patent fillings, videos etc. 2020-04-02 11:21:25
3rd ASCENT access summary report Documents, reports 2019-05-07 12:01:49
Access data site Websites, patent fillings, videos etc. 2019-05-07 12:01:49
3rd Best Practice Report - Tyndall Documents, reports 2019-05-07 12:01:49
2nd ASCENT project flyer Websites, patent fillings, videos etc. 2019-05-07 12:01:49
3rd Users Community Workshop Websites, patent fillings, videos etc. 2019-05-07 12:01:49
Joint Research Activites - Call 3 results Documents, reports 2019-05-07 12:01:49
3rd Best Practice Report - IMEC Documents, reports 2019-05-07 12:01:49
2nd Best Practice Report - IMEC Documents, reports 2019-05-07 12:01:49
2nd ASCENT access summary report Websites, patent fillings, videos etc. 2019-05-07 12:01:49
2nd Best Practice Report - Tyndall Documents, reports 2019-05-07 12:01:49
2nd Workshop on Widening Participation Websites, patent fillings, videos etc. 2019-05-07 12:01:49
3rd Best Practice Report - Leti Documents, reports 2019-05-07 12:01:49
On-line database Websites, patent fillings, videos etc. 2019-05-07 12:01:49
2nd Best Practice Report - Leti Documents, reports 2019-05-07 12:01:49
Joint Research Activites -Call 2 results Websites, patent fillings, videos etc. 2019-05-07 12:01:49
1st Workshop on Widening Participation Websites, patent fillings, videos etc. 2019-05-30 13:17:53
2nd Users Community Workshop Websites, patent fillings, videos etc. 2019-05-30 13:18:04
1st Best Practice Report - IMEC Documents, reports 2019-05-30 13:18:23
1st Users Community Workshop Websites, patent fillings, videos etc. 2019-05-30 13:17:44
Project website Websites, patent fillings, videos etc. 2019-05-30 13:17:29
1st ASCENT access summary report Documents, reports 2019-05-30 13:18:38
1st ASCENT project flyer Websites, patent fillings, videos etc. 2019-05-30 13:17:34
Press release - project announcement Websites, patent fillings, videos etc. 2019-05-30 13:17:30
Joint Research Activities - Call 1 Results Websites, patent fillings, videos etc. 2019-05-30 13:18:41
1st Best Practice Report - Tyndall Documents, reports 2019-05-30 13:18:13
On-line Users Forum Websites, patent fillings, videos etc. 2019-05-30 13:18:38
1st Best Practice Report - Leti Documents, reports 2019-05-30 13:18:38

Take a look to the deliverables list in detail:  detailed list of ASCENT deliverables.

 Publications

year authors and title journal last update
List of publications.
2019 V. Kampylafka, A. Kostopoulos, M. Modreanu, M. Schmidt, E. Gagaoudakis, K. Tsagaraki, V. Kontomitrou, G. Konstantinidis, G. Deligeorgis, G. Kiriakidis, E. Aperathitis
Long-term stability of transparent n/p ZnO homojunctions grown by rf-sputtering at room-temperature
published pages: , ISSN: 2352-8478, DOI: 10.1016/j.jmat.2019.02.006
Journal of Materiomics 2019-09-26
2019 John MacHale, Fintan Meaney, Noel Kennedy, Luke Eaton, Gioele Mirabelli, Mary White, Kevin Thomas, Emanuele Pelucchi, Dirch Hjorth Petersen, Rong Lin, Nikolay Petkov, James Connolly, Chris Hatem, Farzan Gity, Lida Ansari, Brenda Long, Ray Duffy
Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5 nm
published pages: 225709, ISSN: 0021-8979, DOI: 10.1063/1.5098307
Journal of Applied Physics 125/22 2019-08-05
2019 A. Mazurak, J. Jasiński, B. Majkusiak
Effect of traps-to-gate tunnel communication on C-V characteristics of MIS capacitors
published pages: 111011, ISSN: 0167-9317, DOI: 10.1016/j.mee.2019.111011
Microelectronic Engineering 215 2019-08-05
2019 J. Munoz-Gorriz, D. Blachier, G. Reimbold, F. Campabadal, J. Sune, S. Monaghan, K. Cherkaoui, P. K. Hurley, E. Miranda
Assessing the Correlation Between Location and Size of Catastrophic Breakdown Events in High-K MIM Capacitors
published pages: 452-460, ISSN: 1530-4388, DOI: 10.1109/tdmr.2019.2917138
IEEE Transactions on Device and Materials Reliability 19/2 2019-08-05
2018 Yuri V. Gomeniuk, Y Y. Gomeniuk, Pavel N Okholin, Tamara M. Nazarova, Vladimir Djara, Karim Cherkaoui, Paul K. Hurley, A. N. Nazarov
Low-Temperature RF Plasma Treatment Effect on Junctionless Pd-Al 2 O 3 -InGaAs MISFET Operation
published pages: 137-142, ISSN: 1938-5862, DOI: 10.1149/08508.0137ecst
ECS Transactions 85/8 2019-06-13
2016 A. Rodriguez-Fernandez; S. Monaghan; J. Suñé; P.K. Hurley; X. Aymerich; E. Miranda
Nonhomogeneous Generation of Filamentary Paths in High-K Oxide Films Caused by Localized Electrical Stress
published pages: , ISSN: , DOI:
23rd International Workshop on Oxide Electronics, 12-14 October 2016, Nanjing, China Annual 2019-06-13
2019 Andrzej Mazurak, Jakub Jasin´ski, Bogdan Majkusiak
Determination of border/bulk traps parameters based on ( C - G - V ) admittance measurements
published pages: 32904, ISSN: 2166-2754, DOI: 10.1116/1.5060674
Journal of Vacuum Science & Technology B 37/3 2019-08-05
2017 J. Muñoz-Gorriz, S. Monaghan, K. Cherkaoui, J. Suñé, P.K. Hurley, E. Miranda
Spatial analysis of failure sites in large area MIM capacitors using wavelets
published pages: 10-16, ISSN: 0167-9317, DOI: 10.1016/j.mee.2017.04.011
Microelectronic Engineering 178 2019-06-13
2017 J. Muñoz-Gorriz; S. Monaghan; K. Cherkaoui; J. Suñé; P.K. Hurley; E. Miranda
Exploring the Breakdown Spot Spatial Distribution in Metal-Insulator-Metal Capacitors Using the Wavelets Method
published pages: , ISSN: , DOI:
DRIP XVII, 17th Conference on defects-recognition, imaging and physics in semiconductors, 8-12 October 2017, Valladolid, Spain Annual 2019-06-13
2017 Peter Schüffelgen, Daniel Rosenbach, Elmar Neumann, Martin P. Stehno, Martin Lanius, Jialin Zhao, Meng Wang, Brendan Sheehan, Michael Schmidt, Bo Gao, Alexander Brinkman, Gregor Mussler, Thomas Schäpers, Detlev Grützmacher
Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films
published pages: 183-187, ISSN: 0022-0248, DOI: 10.1016/j.jcrysgro.2017.03.035
Journal of Crystal Growth 477 2019-06-13
2017 Yu.V. Gomeniuk, Yu.Yu. Gomeniuk, P.N. Okholin, T.M. Nazarova, K. Cherkaoui, P.K. Hurley and A.N. Nazarov
Low-temperature RF plasma treatment of junctionless Pd-Al2O3-InGaAs MISFETs
published pages: 205-6, ISSN: , DOI:
Promising Trends of Modern Electronics, Informational and Computer systems (MEICS-2017), November 22-24, 2017, Dnipro (Ukraine) Annual 2019-06-13
2018 Maart van Druenen, Gillian Collins, Colm Glynn, Colm O’Dwyer, Justin D. Holmes
Functionalization of SiO 2 Surfaces for Si Monolayer Doping with Minimal Carbon Contamination
published pages: 2191-2201, ISSN: 1944-8244, DOI: 10.1021/acsami.7b16950
ACS Applied Materials & Interfaces 10/2 2019-06-13
2018 Aleksander Pajkanovic
Design and Characterisation of an Inductor and a Low-Noise Amplifier in Monolithic Integrated Circuit Technology for Wideband Operation
published pages: , ISSN: , DOI:
2019-06-07
2019 S. Iadanza, A. Tedesco, G. Giannino, M. Grande, L. Ó Faolain
Silicon nitride 1D-photonic crystal cavity for optical sensing in the near-infrared spectrum in air and liquid
published pages: , ISSN: , DOI:
Photonics Ireland 2018 Biennial 2019-06-07
2017 Carlos Márquez
Electrical Characterization of Reliability in Advanced Silicon-on-Insulator Structures for sub-22nm Technologies
published pages: , ISSN: , DOI:
2019-06-07
2018 Yu.V. Gomeniuk, P.N. Okholin, T.E.Rudenko, Yu.Yu. Gomeniuk, T.M. Nazarova, V. Djara, K. Cherkaoui, P.K. Hurley, A.N. Nazarov
RF Plasma Treatment of Junctionless Pd-Al2O3-InGaAs MISFETs
published pages: , ISSN: , DOI:
VIII Ukrainian scientific conference on physics of semiconductors (USCPS-8) October 2-4 2019-06-07
2018 Martino Aldrigo, Mircea Dragoman, Mircea Modreanu, Ian Povey, Sergiu Iordanescu, Dan Vasilache, Adrian Dinescu, Mazen Shanawani, Diego Masotti
\"Harvesting Electromagnetic Energy in the ${V}$ -Band Using a Rectenna Formed by a Bow Tie Integrated With a 6-nm-Thick Au/HfO 2 /Pt Metal–Insulator–Metal Diode\"
published pages: 2973-2980, ISSN: 0018-9383, DOI: 10.1109/ted.2018.2835138
IEEE Transactions on Electron Devices 65/7 2019-06-07
2016 Liang Ye
Molecular monolayers for doping silicon : from doping dose control to device application
published pages: , ISSN: , DOI: 10.3990/1.9789036541497
2019-05-07
2017 T. Karatsori et al
Statistical Characterization and Modeling of Drain Current Local and Global Variability in 14nm bulk FinFETs
published pages: , ISSN: , DOI:
30th International Conference on Microelectronics Test Structures 2019-06-13
2017 M. Karner et al
Vertically Stacked Nanowire MOSFETS for Sub-10 nm Nodes: Advanced Topography, Device, Variability, and Reliability Simulations
published pages: , ISSN: , DOI:
Technical Digest of the 2016 International Electron Devices Meeting 2019-06-13
2016 T. Chiarella, N. Cordero, J. Donnelly, O. Faynot, J. Greer, D. Holden, G. Maxwell, J. Mitard, A. Mercha, G. Reimbold, P. Roseingrave, V. Terzieva
Modelling 14 nm CMOS and Emerging Devices through ASCENT
published pages: , ISSN: , DOI:
2016 ESSDERC Proceedings 2019-06-13

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