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SiCWIRE

Silicon Carbide Nanowires for Electronic and biosensing applications

Total Cost €

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EC-Contrib. €

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Partnership

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 SiCWIRE project word cloud

Explore the words cloud of the SiCWIRE project. It provides you a very rough idea of what is the project "SiCWIRE" about.

ratio    solutions    200    combine    etching    electron    situ    positions    biosensor    sic    si    professional    leti    device    logic    researcher    stability    residual    nws    doping    dissipation    regions    biocompatibility    performance    nanowire    cea    surfaces    200mv    zekentes    ion    contact    heavy    superior    highest    biosensors    1s    exhibit    consequent    groups    director    operation    efficient    suitable    biosensing    advantages    ioff    fellowship    quality    substances    1e6    1d    academic    electrical    mobility    phenyl    ways    performances    functionalization    bulk    plasma    relaxed    material    ions    channel    nw    employed    industrialization    nwfet    organization    nwfets    materials    ordm    career    decade    cm2v    greek    aqueous    nanowires    inpg    lower    grade    chemical    dr    power    cm    lithography    subthreshold    dna    obtain    carrier    effect    transistors    1e17    largely    maturity    reaching    detecting    moore    scaling    swing    temperature    semiconductor    shown    exhibits    devoted   

Project "SiCWIRE" data sheet

The following table provides information about the project.

Coordinator
INSTITUT POLYTECHNIQUE DE GRENOBLE 

Organization address
address: AVENUE FELIX VIALLET 46
city: GRENOBLE CEDEX 1
postcode: 38031
website: http://www.grenoble-inp.fr

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country France [FR]
 Project website https://www.facebook.com/Sicwire/
 Total cost 138˙807 €
 EC max contribution 138˙807 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2014
 Funding Scheme MSCA-IF-EF-ST
 Starting year 2016
 Duration (year-month-day) from 2016-04-01   to  2017-09-30

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    INSTITUT POLYTECHNIQUE DE GRENOBLE FR (GRENOBLE CEDEX 1) coordinator 138˙807.00

Map

 Project objective

SiC nanowires (NWs) combine the properties of 1D materials with that of SiC and devices based on SiC NWs would present concrete advantages. The main objective of the project is to develop the technology of SiC nanowire field effect transistors (NWFETs) and demonstrate devices suitable for two areas of application: 1) More Moore: Logic applications. SiC NWFETs have the potential of high temperature operation and eventually of efficient power dissipation and thus they can address main issues in semiconductor device scaling. 2) More than Moore: Biosensor applications. SiC exhibits superior to Si chemical stability and biocompatibility and SiC NWFET-based biosensors can thus, exhibit challenging performances. Top-down technology approach (lithography and plasma etching) will employed to obtain, suitable material quality (residual doping lower than 1E17 cm-3, same carrier mobility as bulk material and if possible, in-situ doping for channel and contact regions). The targeted performance of the SiC NWFETs is 200ºC operation, an Ion/Ioff ratio above 1E6, a subthreshold swing less than 200mV/decade and an electron channel mobility above 200 cm2V-1s-1. These electrical characteristics address the needs of logic applications while for biosensor applications are largely enough and can be relaxed. The biosensing operation of SiC NWFETs will be shown by detecting different substances (DNA, heavy ions, phenyl groups…). Towards this aim, a large part of the work will be devoted to the study of the relevant functionalization ways for SiC NW surfaces and stability of these surfaces to various aqueous solutions. The main research work will be conducted in INPG while industrialization issues will be investigated in partner organization (CEA-LETI). The fellowship will enhance the professional maturity of Dr. Zekentes with a consequent effect in his career by reaching a higher researcher-grade (“Research Director”, the highest one for Greek researcher) and higher academic positions.

 Publications

year authors and title journal last update
List of publications.
2016 Jihoon Choi, Edwige Bano, Anne Henry, Giovanni Attolini, Konstantinos Zekentes
Top-down 3C-SiC NWFETs
published pages: , ISSN: , DOI:
40th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE-EXMATEC 2016), Jun 2016, Aveiro, Portugal 2019-06-13
2018 K. Tsagaraki, M. Nafouti, H. Peyré, K. Vamvoukakis, N. Makris, M. Kayambaki, A. Stavrinidis, G. Konstantinidis, M. Panagopoulou, D. Alquier, K. Zekentes
Cross-section doping topography of 4H-SiC VJFETs by various techniques
published pages: , ISSN: , DOI:
2019-06-13
2017 K. Vamvoukakis, D. Stefanakis, A. Stavrinidis, K. Vassilevski, G. Konstantinidis, M. Kayambaki, K. Zekentes
Channel width effect on the operation of 4H-SiC vertical JFETs
published pages: 1600452, ISSN: 1862-6300, DOI: 10.1002/pssa.201600452
physica status solidi (a) 214/4 2019-06-13
2016 Konstantinos Zekentes, Edwige Bano
SiC Nanowire Field-Effect-Transistors
published pages: , ISSN: , DOI:
2019-06-13
2017 Konstantinos Zekentes, Edwige Bano
Technology and performance of SiC- based Nanowire Field Effect Transistors (NWFETs)
published pages: , ISSN: , DOI:
2019-06-13

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