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ALDof 2DTMDs SIGNED

Atomic layer deposition of two-dimensional transition metal dichalcogenide nanolayers

Total Cost €

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EC-Contrib. €

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Partnership

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 ALDof 2DTMDs project word cloud

Explore the words cloud of the ALDof 2DTMDs project. It provides you a very rough idea of what is the project "ALDof 2DTMDs" about.

guide    dimensional    luminescence    derivates    innovative    dichalcogenides    valley    integration    spin    electron    experimentally    area    device    ald    atomistic    heterostructures    opto    scotch    physics    plasma    polarization    2d    limitations    resolution    unexplored    synthesis    synthesized    largely    reveal    expertise    excellent    reveals    theoretical    multitude    body    performed    exfoliated    provides    transition    tape    nanoelectronics    create    class    simulations    band    unusual    atomic    candidates    vast    stepping    industry    gained    surface    derivatives    ideal    deposition    ultimately    commercial    pure    flakes    ex    electrical    dependent    tmds    background    stone    spectroscopy    building    science    alloys    functionalities    group    experimental    combine    fabrication    transmission    characterization    microscopy    gap    layer    technique    systematic    phenomena    tmd    metal    revealing    compatible    synergy    pi    made    ultrathin    optical    materials    chemistry    electronic    two    situ    alloying   

Project "ALDof 2DTMDs" data sheet

The following table provides information about the project.

Coordinator
TECHNISCHE UNIVERSITEIT EINDHOVEN 

Organization address
address: GROENE LOPER 3
city: EINDHOVEN
postcode: 5612 AE
website: www.tue.nl/en

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Netherlands [NL]
 Total cost 1˙968˙708 €
 EC max contribution 1˙968˙708 € (100%)
 Programme 1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC))
 Code Call ERC-2014-CoG
 Funding Scheme ERC-COG
 Starting year 2015
 Duration (year-month-day) from 2015-08-01   to  2020-07-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    TECHNISCHE UNIVERSITEIT EINDHOVEN NL (EINDHOVEN) coordinator 1˙968˙708.00

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 Project objective

Two-dimensional transition metal dichalcogenides (2D-TMDs) are an exciting class of new materials. Their ultrathin body, optical band gap and unusual spin and valley polarization physics make them very promising candidates for a vast new range of (opto-)electronic applications. So far, most experimental work on 2D-TMDs has been performed on exfoliated flakes made by the ‘Scotch tape’ technique. The major next challenge is the large-area synthesis of 2D-TMDs by a technique that ultimately can be used for commercial device fabrication. Building upon pure 2D-TMDs, even more functionalities can be gained from 2D-TMD alloys and heterostructures. Theoretical work on these derivates reveals exciting new phenomena, but experimentally this field is largely unexplored due to synthesis technique limitations. The goal of this proposal is to combine atomic layer deposition with plasma chemistry to create a novel surface-controlled, industry-compatible synthesis technique that will make large area 2D-TMDs, 2D-TMD alloys and 2D-TMD heterostructures a reality. This innovative approach will enable systematic layer dependent studies, likely revealing exciting new properties, and provide integration pathways for a multitude of applications. Atomistic simulations will guide the process development and, together with in- and ex-situ analysis, increase the understanding of the surface chemistry involved. State-of-the-art high resolution transmission electron microscopy will be used to study the alloying process and the formation of heterostructures. Luminescence spectroscopy and electrical characterization will reveal the potential of the synthesized materials for (opto)-electronic applications. The synergy between the excellent background of the PI in 2D materials for nanoelectronics and the group’s leading expertise in ALD and plasma science is unique and provides an ideal stepping stone to develop the synthesis of large-area 2D-TMDs and derivatives.

 Publications

year authors and title journal last update
List of publications.
2018 Akhil Sharma, Marcel A. Verheijen, Longfei Wu, Saurabh Karwal, Vincent Vandalon, Harm C. M. Knoops, Ravi S. Sundaram, Jan P. Hofmann, W. M. M. (Erwin) Kessels, Ageeth A. Bol
Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS 2 : large area, thickness control and tuneable morphology
published pages: 8615-8627, ISSN: 2040-3364, DOI: 10.1039/c8nr02339e
Nanoscale 10/18 2019-06-07
2018 Shashank Balasubramanyam, Akhil Sharma, Vincent Vandalon, Harm C. M. Knoops, Wilhelmus M. M. (Erwin) Kessels, Ageeth A. Bol
Plasma-enhanced atomic layer deposition of tungsten oxide thin films using ( t BuN) 2 (Me 2 N) 2 W and O 2 plasma
published pages: 01B103, ISSN: 0734-2101, DOI: 10.1116/1.4986202
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36/1 2019-06-07
2018 M. Shirazi, W. M. M. Kessels, A. A. Bol
Initial stage of atomic layer deposition of 2D-MoS 2 on a SiO 2 surface: a DFT study
published pages: 16861-16875, ISSN: 1463-9076, DOI: 10.1039/c8cp00210j
Physical Chemistry Chemical Physics 20/24 2019-04-19
2018 Saravana Balaji Basuvalingam, Bart Macco, Harm C. M. Knoops, Jimmy Melskens, Wilhelmus M. M. (Erwin) Kessels, Ageeth A. Bol
Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin films
published pages: 41503, ISSN: 0734-2101, DOI: 10.1116/1.5034097
Journal of Vacuum Science & Technology A 36/4 2019-04-19

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