Explore the words cloud of the INSIGHT project. It provides you a very rough idea of what is the project "INSIGHT" about.
The following table provides information about the project.
|Coordinator Country||Sweden [SE]|
|Total cost||4˙244˙996 €|
|EC max contribution||3˙524˙433 € (83%)|
1. H2020-EU.2.1.1. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT))
|Duration (year-month-day)||from 2015-12-01 to 2018-11-30|
Take a look of project's partnership.
|1||LUNDS UNIVERSITET||SE (Lund)||coordinator||1˙206˙548.00|
|2||FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.||DE (MUNCHEN)||participant||634˙723.00|
|3||COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES||FR (PARIS 15)||participant||622˙763.00|
|4||UNIVERSITY OF GLASGOW||UK (GLASGOW)||participant||542˙155.00|
|5||UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK||IE (Cork)||participant||518˙242.00|
|6||IBM RESEARCH GMBH||CH (RUESCHLIKON)||participant||0.00|
Overall objective: to enhance advanced CMOS RF and logic capability through the use of III-V heterostructure nanowires monolithically integrated on a silicon platform.
INSIGHT will focus on: -Development and evaluation of the performance of silicon based, 94 GHz III-V nanowire MOSFET low-noise amplifiers. The technology opens a path for cost reduction of key mm-wave components for high bandwidth wireless applications. -Development of III-V nanowire MOSFETs on Si with breakdown voltage of 6 V, and evaluation of their performance in millimeter wave (90 GHz) power amplifier circuits. These devices will increase output power available from Si CMOS compatible mm-wave technologies with benefits for transceiver range and sensitivity. -Realisation of basic building blocks for future RF-circuits including mixers, Voltage-Controlled Oscillators, and frequency dividers for prescalers using silicon based III-V nanowire MOSFETS. -Development of science and technology for all-III-V nanowire CMOS on silicon targeting future technology nodes for 10 nm and below. This will be validated by the implementation and dynamic characterisation of a flip-flop as demonstration of the co-integration of III-V n- and p-type nanowire MOSFETs.
INSIGHT is a strong consortium consisting of 7 partners with complimentary and well-documented experience in III-V MOS technology and millimeter-wave circuit design and implementation. Our main outcomes include : a)Technology toolbox including, materials, processes and integration for III-V n- and p-channel MOSFETs on a silicon platform, b) III-V nanowire MOSFET RF-transistor technology, c) Circuit design library, d) Circuit demonstrators with a clear technology path towards higher TRLs and commercialization. Our vision is to use III-V nanowire CMOS technology for millimeter-wave applications in a System-on-Chip approach, combining RF- and logic on one Si chip. Additionally, applications for logic at the 10 nm node and beyond are foreseen.
Work performed, outcomes and results: advancements report(s)
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The information about "INSIGHT" are provided by the European Opendata Portal: CORDIS opendata.
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