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INSIGHT

Integration of III-V Nanowire Semiconductors for next Generation High Performance CMOS SOC Technologies

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EC-Contrib. €

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Project "INSIGHT" data sheet

The following table provides information about the project.

Coordinator
LUNDS UNIVERSITET 

Organization address
address: Paradisgatan 5c
city: LUND
postcode: 22100
website: n.a.

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Sweden [SE]
 Project website http://www.insight-h2020.eu/
 Total cost 4˙244˙996 €
 EC max contribution 3˙524˙433 € (83%)
 Programme 1. H2020-EU.2.1.1. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT))
 Code Call H2020-ICT-2015
 Funding Scheme RIA
 Starting year 2015
 Duration (year-month-day) from 2015-12-01   to  2019-05-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    LUNDS UNIVERSITET SE (LUND) coordinator 1˙206˙548.00
2    FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. DE (MUNCHEN) participant 634˙723.00
3    COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES FR (PARIS 15) participant 622˙763.00
4    UNIVERSITY OF GLASGOW UK (GLASGOW) participant 542˙155.00
5    UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK IE (Cork) participant 518˙242.00
6    IBM RESEARCH GMBH CH (RUESCHLIKON) participant 0.00

Map

 Project objective

Overall objective: to enhance advanced CMOS RF and logic capability through the use of III-V heterostructure nanowires monolithically integrated on a silicon platform.

INSIGHT will focus on: -Development and evaluation of the performance of silicon based, 94 GHz III-V nanowire MOSFET low-noise amplifiers. The technology opens a path for cost reduction of key mm-wave components for high bandwidth wireless applications. -Development of III-V nanowire MOSFETs on Si with breakdown voltage of 6 V, and evaluation of their performance in millimeter wave (90 GHz) power amplifier circuits. These devices will increase output power available from Si CMOS compatible mm-wave technologies with benefits for transceiver range and sensitivity. -Realisation of basic building blocks for future RF-circuits including mixers, Voltage-Controlled Oscillators, and frequency dividers for prescalers using silicon based III-V nanowire MOSFETS. -Development of science and technology for all-III-V nanowire CMOS on silicon targeting future technology nodes for 10 nm and below. This will be validated by the implementation and dynamic characterisation of a flip-flop as demonstration of the co-integration of III-V n- and p-type nanowire MOSFETs.

INSIGHT is a strong consortium consisting of 7 partners with complimentary and well-documented experience in III-V MOS technology and millimeter-wave circuit design and implementation. Our main outcomes include : a)Technology toolbox including, materials, processes and integration for III-V n- and p-channel MOSFETs on a silicon platform, b) III-V nanowire MOSFET RF-transistor technology, c) Circuit design library, d) Circuit demonstrators with a clear technology path towards higher TRLs and commercialization. Our vision is to use III-V nanowire CMOS technology for millimeter-wave applications in a System-on-Chip approach, combining RF- and logic on one Si chip. Additionally, applications for logic at the 10 nm node and beyond are foreseen.

 Deliverables

List of deliverables.
Final report on RF-transistors Documents, reports 2020-03-25 14:33:15
Circuit-level Benchmarking Report Documents, reports 2020-03-25 14:33:15
Second update on Dissemination Plan Documents, reports 2020-03-25 14:33:14
First noise measurements and RF noise model Documents, reports 2020-03-25 14:33:14
Report on high voltage (3-6V) gate stack development Documents, reports 2020-03-25 14:33:14
Web site launch and Press Release for the INSIGHT project Documents, reports 2020-03-25 14:33:14
Improved noise measurements and RF noise model. p-type noise Documents, reports 2020-03-25 14:33:14
Correlation between CV, 1/f, Hysteresis gm(w) on the border trap density Documents, reports 2020-03-25 14:33:14
PA and LNA data sheet Documents, reports 2020-03-25 14:33:14
External Communication Plan Documents, reports 2020-03-25 14:33:14
Data from first small signal model obtained from existing nanowire technology Documents, reports 2020-03-25 14:33:14

Take a look to the deliverables list in detail:  detailed list of INSIGHT deliverables.

 Publications

year authors and title journal last update
List of publications.
2016 V. Deshpande, V. Djara, T. Morf, P. Hashemi, E. O’Connor, K. Balakrishnan, D. Caimi, M. Sousa, L. Czornomaz and J. Fompeyrine
InGaAs-on-Si (Ge) 3D Monolithic Technology for CMOS and More-than-Moore
published pages: , ISSN: , DOI:
Int\'l Conf. on Solid State Devices and Materials (SSDM), Book of Extended Abstracts in 2 2020-03-25
2019 Clarissa Convertino, Cezar B. Zota, Daniele Caimi, Marilyne Sousa, Kirsten E. Moselund, Lukas Czornomaz
High-performance InGaAs FinFETs with raised source/drain extensions
published pages: 80901, ISSN: 0021-4922, DOI:
Japanese Journal of Applied Physics 58/8 2020-03-25
2017 Olli-Pekka Kilpi, Johannes Svensson, Jun Wu, Axel R. Persson, Reine Wallenberg, Erik Lind, Lars-Erik Wernersson
Vertical InAs/InGaAs Heterostructure Metal–Oxide–Semiconductor Field-Effect Transistors on Si
published pages: 6006-6010, ISSN: 1530-6984, DOI: 10.1021/acs.nanolett.7b02251
Nano Letters 17/10 2020-03-25
2019 Mattias Borg, Lynne Gignac, John Bruley, Andreas Malmgren, Saurabh Sant, Clarissa Convertino, Marta D Rossell, Marilyne Sousa, Chris Breslin, Heike Riel, Kirsten E Moselund, Heinz Schmid
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
published pages: 84004, ISSN: 0957-4484, DOI: 10.1088/1361-6528/aaf547
Nanotechnology 30/8 2020-03-25
2016 Erik Lind
High frequency III–V nanowire MOSFETs
published pages: 93005, ISSN: 0268-1242, DOI: 10.1088/0268-1242/31/9/093005
Semiconductor Science and Technology 31/9 2020-03-25
2017 Markus Hellenbrand, Elvedin Memisevic, Martin Berg, Olli-Pekka Kilpi, Johannes Svensson, Lars-Erik Wernersson
Low-Frequency Noise in III–V Nanowire TFETs and MOSFETs
published pages: 1520-1523, ISSN: 0741-3106, DOI: 10.1109/led.2017.2757538
IEEE Electron Device Letters 38/11 2020-03-25
2019 Olli-Pekka Kilpi, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
published pages: 70-75, ISSN: 2168-6734, DOI: 10.1109/jeds.2018.2878659
IEEE Journal of the Electron Devices Society 7 2020-03-25
2017 Jun Lin, Scott Monaghan, Karim Cherkaoui, Ian M. Povey, Brendan Sheehan, Paul K. Hurley
Examining the relationship between capacitance-voltage hysteresis and accumulation frequency dispersion in InGaAs metal-oxide-semiconductor structures based on the response to post-metal annealing
published pages: 204-208, ISSN: 0167-9317, DOI: 10.1016/j.mee.2017.05.020
Microelectronic Engineering 178 2020-03-25
2019 Markus Hellenbrand, Olli-Pekka Kilpi, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
Low-frequency noise in nanowire and planar III-V MOSFETs
published pages: 110986, ISSN: 0167-9317, DOI: 10.1016/j.mee.2019.110986
Microelectronic Engineering 2020-03-25
2018 Adam Jonsson, Johannes Svensson, Lars-Erik Wernersson
A Self-Aligned Gate-Last Process Applied to All-III–V CMOS on Si
published pages: 935-938, ISSN: 0741-3106, DOI: 10.1109/led.2018.2837676
IEEE Electron Device Letters 39/7 2020-03-25
2018 Philippe Ferrandis, Mathilde Billaud, Julien Duvernay, Mickael Martin, Alexandre Arnoult, Helen Grampeix, Mikael Cassé, Hervé Boutry, Thierry Baron, Maud Vinet, Gilles Reimbold
Electrical properties of metal/Al 2 O 3 /In 0.53 Ga 0.47 As capacitors grown on InP
published pages: 161534, ISSN: 0021-8979, DOI: 10.1063/1.5007920
Journal of Applied Physics 123/16 2020-03-25
2019 Clarissa Convertino, Cezar Zota, Heinz Schmid, Daniele Caimi, Marilyne Sousa, Kirsten Moselund, Lukas Czornomaz
InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities
published pages: 87, ISSN: 1996-1944, DOI: 10.3390/ma12010087
Materials 12/1 2020-03-25
2017 V. Deshpande, V. Djara, E. O\'Connor, P. Hashemi, T. Morf, K. Balakrishnan, D. Caimi, M. Sousa, J. Fompeyrine, L. Czornomaz
Three-dimensional monolithic integration of III-V and Si(Ge) FETs for hybrid CMOS and beyond
published pages: 04CA05, ISSN: 1347-4065, DOI: 10.7567/JJAP.56.04CA05
Japanese Journal of Applied Physics vol 56 2020-03-25
2017 Aein S. Babadi, Johannes Svensson, Erik Lind, Lars-Erik Wernersson
Impact of doping and diameter on the electrical properties of GaSb nanowires
published pages: 53502, ISSN: 0003-6951, DOI: 10.1063/1.4975374
Applied Physics Letters 110/5 2020-03-25
2016 Martin Berg, Olli-Pekka Kilpi, Karl-Magnus Persson, Johannes Svensson, Markus Hellenbrand, Erik Lind, Lars-Erik Wernersson
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
published pages: 1-1, ISSN: 0741-3106, DOI: 10.1109/LED.2016.2581918
IEEE Electron Device Letters Volume:PP Issue: 99  2020-03-25
2019 Axel Tessmann, Arnulf Leuther, Felix Heinz, Frank Bernhardt, Laurenz John, Hermann Massler, Lukas Czornomaz, Thomas Merkle
20-nm In0.8Ga0.2As MOSHEMT MMIC Technology on Silicon
published pages: 1-8, ISSN: 0018-9200, DOI: 10.1109/jssc.2019.2915161
IEEE Journal of Solid-State Circuits 2020-03-25
2017 Mattias Borg, Heinz Schmid, Johannes Gooth, Marta D. Rossell, Davide Cutaia, Moritz Knoedler, Nicolas Bologna, Stephan Wirths, Kirsten E. Moselund, Heike Riel
High-Mobility GaSb Nanostructures Cointegrated with InAs on Si
published pages: 2554-2560, ISSN: 1936-0851, DOI: 10.1021/acsnano.6b04541
ACS Nano 11/3 2020-03-25
2016 Cezar Zota, Fredrik Lindelöw, Lars-Erik Wernersson, Erik Lind
High-Frequency InGaAs Tri-gate MOSFETs with fmax of 400 GHz
published pages: , ISSN: 0013-5194, DOI: 10.1049/el.2016.3108
Electronics Letters 2020-03-25
2016 Millar, D., Peralagu, U., Fu, Y.-C., Li, X., Steer, M., and Thayne, I.
Initial investigation on the impact of in situ hydrogen plasma exposure to the interface between molecular beam epitaxially grown p-Ga0.7In0.3Sb (100) and thermal atomic layer deposited (ALD) Al2O3
published pages: N/A, ISSN: , DOI:
WoDIM Yearly; Session 4: III-V FETs 2020-03-25
2017 Davide Cutaia, K. Moselund, H. Schmid, M. Borg, H. Riel
Uniting III-V Tunnel FETs with Silicon
published pages: 38-42, ISSN: 2042-7328, DOI:
Compound Semiconductor 23 (1) 2020-03-25
2017 É. O\'Connor, K. Cherkaoui, S. Monaghan, B. Sheehan, I. M. Povey, P. K. Hurley
Inversion in the In 0.53 Ga 0.47 As metal-oxide-semiconductor system: Impact of the In 0.53 Ga 0.47 As doping concentration
published pages: 32902, ISSN: 0003-6951, DOI: 10.1063/1.4973971
Applied Physics Letters 110/3 2020-03-25
2016 Cezar Zota, Lars-Erik Wernersson, Erik Lind
High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current
published pages: 1-1, ISSN: 0741-3106, DOI: 10.1109/LED.2016.2602841
IEEE Electron Device Letters 2020-03-25
2019 Cezar B. Zota, Clarissa Convertino, Marilyne Sousa, Daniele Caimi, Kirsten Moselund, Lukas Czornomaz
High-Frequency Quantum Well InGaAs-on-Si MOSFETs With Scaled Gate Lengths
published pages: 538-541, ISSN: 0741-3106, DOI: 10.1109/led.2019.2902519
IEEE Electron Device Letters 40/4 2020-03-25
2017 Veeresh Deshpande, H. Hahn, E. O\'Connor, Y. Baumgartner, D. Caimi, M. Sousa, H. Boutry, J. Widiez, L. Brevard, C. Le Royer, M. Vinet, J. Fompeyrine, L. Czornomaz
Demonstration of 3-D SRAM Cell by 3-D Monolithic Integration of InGaAs n-FinFETs on FDSOI CMOS With Interlayer Contacts
published pages: 4503-4509, ISSN: 0018-9383, DOI: 10.1109/ted.2017.2755662
IEEE Transactions on Electron Devices 64/11 2020-03-25
2017 V. Deshpande, V. Djara, E. O\'Connor, P. Hashemi, K. Balakrishnan, D. Caimi, M. Sousa, L. Czornomaz, J. Fompeyrine
DC and RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration
published pages: 87-91, ISSN: 0038-1101, DOI: 10.1016/j.sse.2016.10.034
Solid-State Electronics 128 2020-03-25

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