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IONS4SET SIGNED

Ion-irradiation-induced Si Nanodot Self-Assembly for Hybrid SET-CMOS Technology

Total Cost €

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EC-Contrib. €

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Partnership

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 IONS4SET project word cloud

Explore the words cloud of the IONS4SET project. It provides you a very rough idea of what is the project "IONS4SET" about.

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Project "IONS4SET" data sheet

The following table provides information about the project.

Coordinator
HELMHOLTZ-ZENTRUM DRESDEN-ROSSENDORF EV 

Organization address
address: BAUTZNER LANDSTRASSE 400
city: DRESDEN
postcode: 1328
website: www.hzdr.de

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Germany [DE]
 Project website http://www.ions4set.eu
 Total cost 3˙999˙205 €
 EC max contribution 3˙999˙205 € (100%)
 Programme 1. H2020-EU.2.1.1. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT))
 Code Call H2020-ICT-2015
 Funding Scheme RIA
 Starting year 2016
 Duration (year-month-day) from 2016-02-01   to  2020-07-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    HELMHOLTZ-ZENTRUM DRESDEN-ROSSENDORF EV DE (DRESDEN) coordinator 858˙125.00
2    COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES FR (PARIS 15) participant 1˙015˙837.00
3    AGENCIA ESTATAL CONSEJO SUPERIOR DEINVESTIGACIONES CIENTIFICAS ES (MADRID) participant 612˙825.00
4    CONSIGLIO NAZIONALE DELLE RICERCHE IT (ROMA) participant 598˙437.00
5    FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. DE (MUNCHEN) participant 573˙750.00
6    HELSINGIN YLIOPISTO FI (HELSINGIN YLIOPISTO) participant 340˙230.00

Map

 Project objective

Billions of tiny computers that can sense and communicate from anywhere are coming online, creating the “Internet of Things” (IoT). As the IoT continues to expand, more and more devices need batteries and plugs. According to Gartner (www.gartner.com), there will be nearly 26 billion devices connected to the IoT by 2020. Therefore, together with improved batteries, advanced computation and communication must be delivered at extremely low-power consumption. It is well-known that Single Electron Transistors (SET) are extremely low-energy dissipation devices. CMOS and SETs are complementary: SET is the champion of low-power consumption while CMOS advantages like high-speed, driving etc. compensate exactly for SET's intrinsic drawbacks. Unrivalled integration with high performance is expected for hybrid SET-CMOS architectures.Manufacturability is the roadblock for large-scale use of hybrid SET-CMOS architectures. To assure room temperature (RT) operation, single dots of diameters below 5 nm have to be fabri-cated, exactly located between source and drain with tunnel distances of a few nm. A reliable CMOS compatible process of co-fabrication of RT-SETs and FETs is not yet available. IONS4SET will pave the way for fabrication of low-energy devices operating at RT using the discovery of a bottom-up self-assembly process. Lithography cannot deliver the feature sizes of 1…3 nm required for RT operation. IONS4SET will provide both, (i) controlled self-assembly of single ~ 2 nm Si dots and (ii) self-alignment of each nanodot with source and drain at tunneling distances of ~ 2 nm. The fabrication process of the Si nanodot involves (i) ion irradiation through a few tens of nm thin Si pillars with an embedded SiO2 layer and (ii) thermal activation of self-assembly. Dot self-assembly works for narrow pillars only, i.e. nanopillar fabrication is crucial for IONS4SET. Finally, a power saving hybrid SET/CMOS device with a vertical gate-all-around nanowire GAA-SET will be fabricated.

 Deliverables

List of deliverables.
Report on stability studies of nanopillars Documents, reports 2020-01-21 12:59:26
Report on predicted optimum device specifications for demonstrator fabrication Documents, reports 2020-01-21 12:59:26
Organization and realization Workshop 2: DSA: Block Co-Polymer and Beyond Other 2020-01-21 12:59:26
Assessment of IETS and DA-SDT investiga-tion of defects at the Si/SiO2 interface Documents, reports 2020-01-21 12:59:26
Report on Si nanodot self-assembly in Si/SiO2/Si nanopillar stacks Documents, reports 2020-01-21 12:59:26
Structural characterization of functional nano-pillars Documents, reports 2020-01-21 12:59:26
Report on the first version of process simulator of ion implantation and mixing in Si/SiO2 nanostructures Documents, reports 2020-01-21 12:59:26
First delivery of wafer-scale pillars with Si nanodots for device fabrication Documents, reports 2020-01-21 12:59:26
Electrical characterization of Si nanodot self-assembly Documents, reports 2020-01-21 12:59:26
Plan for fabrication of Si nanodot self-assem-bly by ion processing Documents, reports 2020-01-21 12:59:25
First data from ion beam mixing simulations as input for kinetic Monte-Carlo simulations Documents, reports 2020-01-21 12:59:25
Organization and realization Workshop 1: Tunneling devices: Theory and experiment Other 2020-01-21 12:59:25
Installation of an external industry board Websites, patent fillings, videos etc. 2020-01-21 12:59:25
Project web-page established and launched Websites, patent fillings, videos etc. 2020-01-21 12:59:25
First pillars on SiO2 island layer available (20–50 nm) by EBDW Demonstrators, pilots, prototypes 2020-01-21 12:59:25
Specification of process and device parameters Websites, patent fillings, videos etc. 2020-01-21 12:59:25
Report on process definition Documents, reports 2020-01-21 12:59:25
First pillars on SiO2 island layers available by DSA (free surface) Demonstrators, pilots, prototypes 2020-01-21 12:59:25
Structural characterization of Si nanodot self-assembly Documents, reports 2020-01-21 12:59:24
Report on optimum processing conditions in planar stacks with HIM Documents, reports 2020-01-21 12:59:25

Take a look to the deliverables list in detail:  detailed list of IONS4SET deliverables.

 Publications

year authors and title journal last update
List of publications.
2016 Christoffer Fridlund
Computer Simulation Methods of Ion Penetration in Matter
published pages: 1 - 65, ISSN: , DOI:
2020-01-21
2016 Jacopo Frascaroli, Elena Cianci, Sabina Spiga, Gabriele Seguini, Michele Perego
Ozone-Based Sequential Infiltration Synthesis of Al 2 O 3 Nanostructures in Symmetric Block Copolymer
published pages: 33933-33942, ISSN: 1944-8244, DOI: 10.1021/acsami.6b11340
ACS Applied Materials & Interfaces 8/49 2020-01-21
2017 C. Fridlund, J. Laakso, K. Nordlund, F. Djurabekova
Atomistic simulation of ion irradiation of semiconductor heterostructures
published pages: 14-18, ISSN: 0168-583X, DOI: 10.1016/j.nimb.2017.04.034
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 409 2020-01-21
2016 K. Nordlund, F. Djurabekova, G. Hobler
Large fraction of crystal directions leads to ion channeling
published pages: from 214109-1 to, ISSN: 1098-0121, DOI: 10.1103/PhysRevB.94.214109
Physical Review B 94/21 2020-01-21
2016 Serim Ilday, F. Ömer Ilday, René Hübner, Ty J. Prosa, Isabelle Martin, Gizem Nogay, Ismail Kabacelik, Zoltan Mics, Mischa Bonn, Dmitry Turchinovich, Hande Toffoli, Daniele Toffoli, David Friedrich, Bernd Schmidt, Karl-Heinz Heinig, Rasit Turan
Multiscale Self-Assembly of Silicon Quantum Dots into an Anisotropic Three-Dimensional Random Network
published pages: 1942-1948, ISSN: 1530-6984, DOI: 10.1021/acs.nanolett.5b05158
Nano Letters 16/3 2020-01-21
2018 E. AMAT, R. CANAL, A. CALOMARDE, A. RUBIO
Review on suitable eDRAM configurations for next nano-metric electronics era
published pages: 22-29, ISSN: 1347-9725, DOI: 10.5188/ijsmer.23.22
International Journal of the Society of Materials Engineering for Resources 23/1 2020-01-21
2017 Patricia Pimenta Barros, Ahmed Gharbi, Antoine Fouquet, Sandra Bos, Jérôme Hazart, Florian Delachat, Xavier Chevalier, Ian Cayrefourcq, Laurent Pain, Raluca Tiron
Balancing Block Copolymer Thickness over Template Density in Graphoepitaxy Approach
published pages: 1700285, ISSN: 1438-7492, DOI: 10.1002/mame.201700285
Macromolecular Materials and Engineering 302/11 2020-01-21
2018 Xiaomo Xu, Thomas Prüfer, Daniel Wolf, Hans-Jürgen Engelmann, Lothar Bischoff, René Hübner, Karl-Heinz Heinig, Wolfhard Möller, Stefan Facsko, Johannes von Borany, Gregor Hlawacek
Site-controlled formation of single Si nanocrystals in a buried SiO 2 matrix using ion beam mixing
published pages: 2883-2892, ISSN: 2190-4286, DOI: 10.3762/bjnano.9.267
Beilstein Journal of Nanotechnology 9 2020-01-21
2018 Gabriele Seguini, Fabio Zanenga, Michele Laus, Michele Perego
Ordering kinetics in two-dimensional hexagonal pattern of cylinder-forming PS- b -PMMA block copolymer thin films: Dependence on the segregation strength
published pages: from 055605-1 to, ISSN: 2475-9953, DOI: 10.1103/physrevmaterials.2.055605
Physical Review Materials 2/5 2020-01-21
2017 Esteve Amat, Joan Bausells, Francesc Perez-Murano
Exploring the Influence of Variability on Single-Electron Transistors Into SET-Based Circuits
published pages: 5172-5180, ISSN: 0018-9383, DOI: 10.1109/ted.2017.2765003
IEEE Transactions on Electron Devices 64/12 2020-01-21
2018 Elena Cianci, Daniele Nazzari, Gabriele Seguini, Michele Perego
Trimethylaluminum Diffusion in PMMA Thin Films during Sequential Infiltration Synthesis: In Situ Dynamic Spectroscopic Ellipsometric Investigation
published pages: 1801016, ISSN: 2196-7350, DOI: 10.1002/admi.201801016
Advanced Materials Interfaces 5/20 2020-01-21
2018 S Zhang, O H Pakarinen, M Backholm, F Djurabekova, K Nordlund, J Keinonen, T S Wang
Absence of single critical dose for the amorphization of quartz under ion irradiation
published pages: 15403, ISSN: 0953-8984, DOI: 10.1088/1361-648x/aa9868
Journal of Physics: Condensed Matter 30/1 2020-01-21
2018 Florian Delachat, Ahmed Gharbi, Patricia Pimenta-Barros, Antoine Fouquet, Guillaume Claveau, Nicolas Posseme, Laurent Pain, Célia Nicolet, Christophe Navarro, Ian Cayrefourcq, Raluca Tiron
An embedded neutral layer for advanced surface affinity control in grapho-epitaxy directed self-assembly
published pages: 10900-10910, ISSN: 2040-3364, DOI: 10.1039/c8nr00123e
Nanoscale 10/23 2020-01-21

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