NANOULOP

Nano-Architectures for Ultrafast Optoelectronics

 Coordinatore TECHNISCHE UNIVERSITAET MUENCHEN 

 Organization address address: Arcisstrasse 21
city: MUENCHEN
postcode: 80333

contact info
Titolo: Ms.
Nome: Ulrike
Cognome: Ronchetti
Email: send email
Telefono: +49 89 289 22616
Fax: +49 89 289 22620

 Nazionalità Coordinatore Germany [DE]
 Totale costo 174˙475 €
 EC contributo 174˙475 €
 Programma FP7-PEOPLE
Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)
 Code Call FP7-PEOPLE-2011-IIF
 Funding Scheme MC-IIF
 Anno di inizio 2012
 Periodo (anno-mese-giorno) 2012-09-01   -   2014-08-31

 Partecipanti

# participant  country  role  EC contrib. [€] 
1    TECHNISCHE UNIVERSITAET MUENCHEN

 Organization address address: Arcisstrasse 21
city: MUENCHEN
postcode: 80333

contact info
Titolo: Ms.
Nome: Ulrike
Cognome: Ronchetti
Email: send email
Telefono: +49 89 289 22616
Fax: +49 89 289 22620

DE (MUENCHEN) coordinator 174˙475.20

Mappa


 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

nano    circuits    nanowires    electronic    layer    light    intense    titanate    nitride    ultrafast    absorption    cycle    nanosheets    waveform    band    gallium    dimensional    motion    direct    electron    near    optical    single    photon    gap   

 Obiettivo del progetto (Objective)

'We propose to fabricate nano-patterned electronic circuits to demonstrate the control of the electronic motion by ultrafast photonic tools. Nanowires and nanosheets will play an important role to build the nano-architecture which allows the direct measurement of the photo current induced by intense, near single-cycle light fields with stable well-defined waveforms. Much attention will be focused on gallium nitride nanowires and titanate nanosheets due to their unique optical and electrical properties and their potential for applications in nanoelectronics. The growth of gallium nitride will be carried out by molecular beam epitaxy. Titanate nanosheets which are wide band gap semiconductor single crystals will be synthesized by exfoliation of layered titanate oxides. Furthermore, assemblies of multilayer films in which the nanosheets are used as building blocks will be fabricated via the layer by layer method. The nanomaterials will be used as bridges between two gold electrodes to build the nano-architectures for attosecond measurements. A valence band electron in a wide band gap solid can find itself promoted by an intense optical field into the conduction band, either by direct photon absorption, multi photon absorption or adiabatic interband tunneling. A second synchronized near single-cycle near-infrared field with well defined waveform will induce an electron momentum asymmetry resulting in a measurable electric current which can be controlled by waveform of the laser pulse. Such operation would enable the detailed understanding of the charge transport processes in direct time-domain, such as dephasing and electron scattering, in low dimensional systems. This project would help not only to demonstrate light-field control of electron motion in low- dimensional systems but also to develop ultrafast electronic technologies like logic circuits performing at optical frequencies in low-dimensional materials.'

Altri progetti dello stesso programma (FP7-PEOPLE)

FLOCON (2010)

"Flow Control: Reduced Order Modelling, Nonlinear Analysis and Control Design"

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ICE (2009)

International Cryogenic Experiment

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LOW-ENERGY ELECTRONS (2008)

"Experimental investigation of physico-chemical effects of low-energy electron interaction with isolated, clustered and self-assembled biomolecules"

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