NOMOS

"Novel semiconductor Optical sources for Metrology, Signal PrOcessing and Space applications."

Coordinatore	III V LAB GIE    more  Organization address address: ROUTE DE NOZAY city: MARCOUSSIS postcode: 91460 contact info Titolo: Dr. Nome: Denis Cognome: Mazerolle Email: send email Telefono: +33 1 33 77 68 93
Nazionalità Coordinatore	France [FR]
Totale costo	202˙405 €
EC contributo	202˙405 €
Programma	FP7-PEOPLE Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)
Code Call	FP7-PEOPLE-2012-IEF
Funding Scheme	MC-IEF
Anno di inizio	2013
Periodo (anno-mese-giorno)	2013-10-01   -   2015-09-30

 Partecipanti

#	participant	country	role	EC contrib. [€]
1	III V LAB GIE  Organization address address: ROUTE DE NOZAY city: MARCOUSSIS postcode: 91460 contact info Titolo: Dr. Nome: Denis Cognome: Mazerolle Email: send email Telefono: +33 1 33 77 68 93	FR (MARCOUSSIS)	coordinator	202˙405.80

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 Obiettivo del progetto (Objective)

'The purpose of this study is to review and assess novel technique of stabilized sub-picosecond optical pulse production based on compact and efficient semiconductor mode-locked lasers for application in LIDAR via the design, manufacturing and performance characterization. The design and assessment of selected semiconductor mode-locked laser architecture is based on considerations and trade-offs of the state-of-the-art technologies and device concepts enabling high relative accuracy of 10-9 in optical distance measurements. Mode-Locked Semiconductor Lasers systems (MLSCL) are the most compact, efficient and reliable sources of ultra short optical pulses, with high repetition frequency. They find nowadays applications in various domains ranging from optical telecommunications to fluorescence lifetime imaging. Historically the laboratory demonstrations in 70-th started at first with GaAs/AlGaAs devices emitting in the NIR range. Later on the emphasis shifted to quaternary InGaAsP alloys with the target objective on optical telecommunication wavelength ranges at 1.33 and 1.55 µm. Today several technologies, among which are SESAM based VECSELs and monolithic cavity edge emitting lasers, have found a niche in telecom market. At the same time novel application domains appear related to expansion of the wavelength range due to novel material systems such as group-III nitrides and advance in optical frequency comb technology. The project aims at developing the Mode-Locked Semiconductor Laser technology which have the best potential for LIDAR applications, especially in terms of pulse duration / repetition rate and shape, pulse energy, laser wavelength and beam quality.'