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R2RAM

Radiation Hard Resistive Random-Access Memory

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EC-Contrib. €

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Partnership

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Project "R2RAM" data sheet

The following table provides information about the project.

Coordinator
IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK 

Organization address
address: IM TECHNOLOGIEPARK 25
city: FRANKFURT ODER
postcode: 15236
website: n.a.

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Germany [DE]
 Project website http://www.r2ram.eu
 Total cost 1˙039˙362 €
 EC max contribution 1˙039˙362 € (100%)
 Programme 1. H2020-EU.2.1.6.1. (Enabling European competitiveness, non-dependence and innovation of the European space sector)
 Code Call H2020-COMPET-2014
 Funding Scheme RIA
 Starting year 2015
 Duration (year-month-day) from 2015-01-01   to  2016-12-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK DE (FRANKFURT ODER) coordinator 400˙312.00
2    REDCAT DEVICES SRL IT (MILANO) participant 349˙850.00
3    CONSORZIO NAZIONALE INTERUNIVERSITARIO PER LA NANOELETTRONICA IT (BOLOGNA) participant 195˙000.00
4    JYVASKYLAN YLIOPISTO FI (JYVASKYLA) participant 94˙200.00

Map

 Project objective

The project aims to realize a strong methodology for the development and design of a radiation hard non-volatile memory technology by using standard CMOS silicon processing. Since standard silicon memories, such as flash memories tend to fail under irradiation, a new approach is envisaged: the development of a specific memory technology, so called resistive random-access memory (RRAM), which is able to sustain heavy ions and other charged particles. The switching effect of RRAM devices is caused by chemical Redox-reactions, therefore, radiation effects like total ionizing dose and single event effects don’t affect the switching mechanism. Semiconductor memories, among rad hard integrated circuit scenario, are one of the most critical topics for space applications. Actually both volatile and nonvolatile memories, excluding few exceptions, are integrated using standard processes and standard architectures. This means that the final device is typically at least Rad tolerant and not Rad Hard and failure during mission is avoided using Error Correcting Code techniques including redundancy at the board level. The basic goal of the project is to give a methodology for the development of a new rad-hard nonvolatile RRAM memory with high-performance features like good retention, re-programmability and cycling, and realize a prototype (1Mbit RRAM memory) in order to validate the approach.

 Deliverables

List of deliverables.
R2RAM website Websites, patent fillings, videos etc. 2019-07-22 15:09:04
Read Strategy in R2RAM Documents, reports 2019-07-22 15:09:04
Articles in international journals Websites, patent fillings, videos etc. 2019-07-22 15:09:04
Programming and Erasing Strategy in R2RAM Documents, reports 2019-07-22 15:09:04
1Mbit R2RAM Architecture Documents, reports 2019-07-22 15:09:03

Take a look to the deliverables list in detail:  detailed list of R2RAM deliverables.

 Publications

year authors and title journal last update
List of publications.
2016 A. Grossi, E. Perez, C. Zambelli, P. Olivo, Ch. Wenger
Impact of HfO2 Deposition Techniques on the Switching Parameters in embedded 1T-1R Cells and Arrays
published pages: , ISSN: , DOI:
Workshop on Dielectrics in Microelectronics (WoDiM 2016) 2019-07-22
2016 Eduardo Pérez, Florian Teply, Christian Wenger
Electrical study of radiation hard designed HfO2-based 1T-1R RRAM devices
published pages: 1-6, ISSN: 2059-8521, DOI: 10.1557/adv.2016.616
MRS Advances 2019-07-22
2017 Eduardo Pérez, Christian Wenger, Alessandro Grossi, Cristian Zambelli, Piero Olivo, Robin Roelofs
Impact of temperature on conduction mechanisms and switching parameters in HfO2-based 1T-1R resistive random access memories devices
published pages: 01A103, ISSN: 2166-2754, DOI: 10.1116/1.4967308
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 35/1 2019-07-22
2015 Hee-Dong Kim, Felice Crupi, Mindaugas Lukosius, Andreas Trusch, Christian Walczyk, Christian Wenger
Resistive switching characteristics of integrated polycrystalline hafnium oxide based one transistor and one resistor devices fabricated by atomic vapor deposition methods
published pages: 52204, ISSN: 2166-2754, DOI: 10.1116/1.4928412
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 33/5 2019-07-22
2016 Alessandro Grossi, Cristian Zambelli, Piero Olivo, Alberto Crespo-Yepes, Javier Martin-Martinez, Rosana Rodríguez, Monserrat Nafria, Eduardo Perez, Christian Wenger
Electrical characterization and modeling of 1T-1R RRAM arrays with amorphous and poly-crystalline HfO2
published pages: , ISSN: 0038-1101, DOI: 10.1016/j.sse.2016.10.025
Solid-State Electronics 2019-07-22
2015 Alessandro Grossi, Damian Walczyk, Cristian Zambelli, Enrique Miranda, Piero Olivo, Valeriy Stikanov, Alessandro Feriani, Jordi Sune, Gunter Schoof, Rolf Kraemer, Bernd Tillack, Alexander Fox, Thomas Schroeder, Christian Wenger, Christian Walczyk
Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays
published pages: 2502-2509, ISSN: 0018-9383, DOI: 10.1109/TED.2015.2442412
IEEE Transactions on Electron Devices 62/8 2019-07-22
2016 Eduardo Perez, Alessandro Grossi, Cristian Zambelli, Piero Olivo, Christian Wenger
Impact of the incremental programming algorithm on the filament conduction in HfO2 based RRAM arrays
published pages: 1-1, ISSN: 2168-6734, DOI: 10.1109/JEDS.2016.2618425
IEEE Journal of the Electron Devices Society 2019-07-22
2016 Alessandro Grossi, Cristian Zambelli, Piero Olivo, Enrique Miranda, Valeriy Stikanov, Christian Walczyk, Christian Wenger
Electrical characterization and modeling of pulse-based forming techniques in RRAM arrays
published pages: 17-25, ISSN: 0038-1101, DOI: 10.1016/j.sse.2015.10.003
Solid-State Electronics 115 2019-07-22
2016 Alessandro Grossi, Cristian Zambelli, Piero Olivo, Paolo Pellati, Michele Ramponi, Christian Wenger, Jeremy Alvarez-Herault, Ken Mackay
An Automated Test Equipment for Characterization of emerging MRAM and RRAM arrays
published pages: 1-1, ISSN: 2168-6750, DOI: 10.1109/TETC.2016.2585043
IEEE Transactions on Emerging Topics in Computing 2019-07-22
2016 Felice Crupi, Francesco Filice, Alessandro Grossi, Cristian Zambelli, Piero Olivo, Eduardo Perez, Christian Wenger
Implications of the Incremental Pulse and Verify Algorithm on the Forming and Switching Distributions in RERAM Arrays
published pages: 413-418, ISSN: 1530-4388, DOI: 10.1109/TDMR.2016.2594119
IEEE Transactions on Device and Materials Reliability 16/3 2019-07-22
2016 Nicola Lupo; Cristiano Calligaro; Roberto Gastaldi; Christian Wenger; Franco Maloberti
Design of resistive non-volatile memories for rad-hard applications
published pages: 1594-1597, ISSN: , DOI: 10.1109/ISCAS.2016.7538869
2016 IEEE International Symposium on Circuits and Systems (ISCAS) 2019-07-22

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