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SPRInG SIGNED

Short Period Superlattices for Rational (In,Ga)N

Total Cost €

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EC-Contrib. €

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Partnership

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Project "SPRInG" data sheet

The following table provides information about the project.

Coordinator
FORSCHUNGSVERBUND BERLIN EV 

Organization address
address: RUDOWER CHAUSSEE 17
city: BERLIN
postcode: 12489
website: www.fv-berlin.de

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Germany [DE]
 Project website http://www.spring-sls.eu/
 Total cost 1˙221˙003 €
 EC max contribution 1˙221˙003 € (100%)
 Programme 1. H2020-EU.1.3.1. (Fostering new skills by means of excellent initial training of researchers)
 Code Call H2020-MSCA-ITN-2014
 Funding Scheme MSCA-ITN-EID
 Starting year 2015
 Duration (year-month-day) from 2015-01-01   to  2018-12-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    FORSCHUNGSVERBUND BERLIN EV DE (BERLIN) coordinator 996˙865.00
2    TOP-GAN SP ZOO PL (WARSZAWA) participant 224˙137.00
3    HUMBOLDT-UNIVERSITAET ZU BERLIN DE (BERLIN) partner 0.00
4    Institute of High Pressure Physics, Polish Academy of Sciences PL (Warsaw) partner 0.00

Map

 Project objective

The scientific mission of this project is to develop a novel (In,Ga)N alloy that offers completely new opportunities to tune bandgaps and piezoelectric fields in quantum structures for highly efficient optoelectronic devices. This novel “rational” (n InN/m GaN) alloy is based on short period superlattices that stack integer numbers of m (n) monolayers (MLs) of InN (GaN), i.e. heterostructures of pure InN MLs embedded in a GaN matrix. The development of fundamental knowledge on this rational (InN/GaN) alloy as established for other III-V compounds is envisioned as the base for such devices. This objective will be achieved by a bilateral collaboration and the concerted action between Forschungsverbund Berlin (FVB) as academic institution, and TopGaN sp.z.o.o. (TopGaN) as non-academic partner. Besides, the Humboldt-Universität zu Berlin (HU) and the Institute of High- Pressure Physics – Polish Academy of Sciences (UNIPRESS) will also be involved as external partner organizations. As a specific strength, within the project “Short Period Superlattices for Rational (In,Ga)N” (SPRInG) we aim at unifying a unique portfolio of experimental competencies with high-level resources and infrastructures. These create an ideal research environment designed to promote an interdisciplinary collaboration and an international networking of the early-stage researchers (ESRs). The students will professionally develop and meet the challenge to solve very exciting scientific questions of the potential III-nitride future technology for solid state lighting. A quality monitoring scheme will ensure that the ESRs will receive an optimised training, which will prepare and qualify them for the research and development of future technologies in academic and non-academic organizations.

 Deliverables

List of deliverables.
PhD thesis WP3 Other 2019-04-05 09:51:35
PhD thesis WP2.1 Other 2019-04-09 12:57:38
PhD thesis WP1.2 Other 2019-04-09 12:57:39
Critical thickness for dislocation formation in (In,Ga)N buffers on different substrates Documents, reports 2019-04-09 12:57:38
PhD thesis WP2.2 Other 2019-04-05 09:51:35
Recombination mechanism in In-rich (InN/GaN) SPSLs Documents, reports 2019-04-09 12:57:40
PhD thesis WP1.1 Other 2019-04-09 12:57:40
Defect formation in (In,Ga)N buffers on GaN and alternative substrates Documents, reports 2019-03-04 15:27:00
Supervisory Board Other 2019-02-12 12:29:48
Reconstruction effects on In incorporation in SPSLs Documents, reports 2019-03-04 11:00:02
In wetting and InN reconstructions on ZnO and on relaxed (In,Ga)N buffers deposited on Ga- and N-polar GaN substrates with and without miscut Documents, reports 2019-03-04 15:24:36
MTR Other 2019-02-12 12:29:48
Ordering in SPSLs and factors affecting In fluctuations and interface roughness in SPSLs Documents, reports 2019-03-04 11:00:02
Progress Report Documents, reports 2019-03-04 15:24:35
Influence of active species on In wetting and InN reconstructions on Gaand N-polar GaN substrates Documents, reports 2019-02-12 12:29:46
Draft Periodic report Documents, reports 2019-02-12 12:29:51
Influence of Mg as active specie on the reconstructions of InN and on the incorporation of In in (InN/GaN) SPSLs Documents, reports 2019-02-12 12:29:46
Reliable method for analysis and quantification of In fluctuations Documents, reports 2019-02-12 12:29:54

Take a look to the deliverables list in detail:  detailed list of SPRInG deliverables.

 Publications

year authors and title journal last update
List of publications.
2018 Torsten Ernst, Caroline Chèze, Raffaella Calarco
InN and GaN/InN monolayers grown on ZnO( 000 1 ¯) and ZnO(0001)
published pages: 115305, ISSN: 0021-8979, DOI: 10.1063/1.5041880
Journal of Applied Physics 124/11 2019-05-29
2018 L. Lymperakis, T. Schulz, C. Freysoldt, M. Anikeeva, Z. Chen, X. Zheng, B. Shen, C. Chèze, M. Siekacz, X. Q. Wang, M. Albrecht, J. Neugebauer
Elastically frustrated rehybridization: Origin of chemical order and compositional limits in InGaN quantum wells
published pages: , ISSN: 2475-9953, DOI: 10.1103/PhysRevMaterials.2.011601
Physical Review Materials 2/1 2019-04-18
2018 P. Wolny, M. Anikeeva, M. Sawicka, T. Schulz, T. Markurt, M. Albrecht, M. Siekacz, C. Skierbiszewski
Dependence of indium content in monolayer-thick InGaN quantum wells on growth temperature in In x Ga 1-x N/In 0.02 Ga 0.98 N superlattices
published pages: 65701, ISSN: 0021-8979, DOI: 10.1063/1.5032287
Journal of Applied Physics 124/6 2019-04-18
2018 J. Moneta, M. Siekacz, E. Grzanka, T. Schulz, T. Markurt, M. Albrecht, J. Smalc-Koziorowska
Peculiarities of plastic relaxation of (0001) InGaN epilayers and their consequences for pseudo-substrate application
published pages: 31904, ISSN: 0003-6951, DOI: 10.1063/1.5030190
Applied Physics Letters 113/3 2019-05-29
2017 C. Chèze , F. Feix , M. Anikeeva , T. Schulz , M. Albrecht , H. Riechert , O. Brandt , R. Calarco
In/GaN(0001)-(√3×√3)R30° adsorbate structure as a template for embedded (In,Ga)N/GaN monolayersand short-period superlattices
published pages: 72104, ISSN: 0003-6951, DOI: 10.1063/1.4976198
Applied Physics Letters 110 2019-05-29

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