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PINC

Towards p-type conductivity in In0.5Ga0.5N nanocolumns on a Si (100) substrate with GaN buffer layers

Total Cost €

0

EC-Contrib. €

0

Partnership

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Project "PINC" data sheet

The following table provides information about the project.

Coordinator
UNIVERSIDAD POLITECNICA DE MADRID 

Organization address
address: CALLE RAMIRO DE MAEZTU 7 EDIFICIO RECTORADO
city: MADRID
postcode: 28040
website: www.upm.es

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Spain [ES]
 Project website http://iopscience.iop.org/article/10.1088/1361-6528/aa78e6/meta
 Total cost 170˙121 €
 EC max contribution 170˙121 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2014
 Funding Scheme MSCA-IF-EF-ST
 Starting year 2015
 Duration (year-month-day) from 2015-06-15   to  2017-06-14

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    UNIVERSIDAD POLITECNICA DE MADRID ES (MADRID) coordinator 170˙121.00

Map

 Project objective

We propose a 24-months-project, working on the growth and characterization of Mg doped InxGa1-xN Nanocolumns (NCs) on a Si (100) substrate with a GaN buffer layer, aiming to achieve the p-type conductivity in In0.5Ga0.5N NCs. In the previous study, selective area growth (SAG) of In(Ga)N NCs on top of a GaN buffered Si substrate by using plasma-assisted molecular beam epitaxy (PAMBE) has been achieved. Subsequently, the major challenges for fabricating p-In0.5Ga0.5N/n-In0.5Ga0.5N/p-Si/n-Si stacking solar cells deal with the achievement of controllable p-type conductivity in In0.5Ga0.5N NCs and its reliable assessment. Ordered Mg-doped InxGa1-xN NCs will be grown on a Si (100) substrate with a GaN buffer layer by using PAMBE. The growth will start with Mg-doped In0.3Ga0.7N/GaN NCs. Then Indium mole fraction in subsequent samples will be increased gradually, approaching 0.5. During the process, different characterization measurements will be performed in order to optimize the growth conditions.The proposed project will provide high quality p-type InxGa1-xN, 0.3≤x≤0.5, NCs on a Si (100) substrate with a GaN buffer layer for further processing. The electronic and structural properties of Mg-doped InxGa1-xN, 0.3≤x≤0.5, can be abstracted from the characterization results in the project. The information will fill the research gap in the Mg-doped InxGa1-xN, 0.3≤x≤0.5.

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The information about "PINC" are provided by the European Opendata Portal: CORDIS opendata.

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