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MAGICAL SIGNED

CMOS/magnetoelectronic Integrated Circuits wil Multifunctional Capabilities

Total Cost €

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EC-Contrib. €

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Partnership

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 MAGICAL project word cloud

Explore the words cloud of the MAGICAL project. It provides you a very rough idea of what is the project "MAGICAL" about.

ideas    nanostructuration    gt    microelectronic    firstly    baseline    rf    goals    hybrid    largely    hurdles    benefits    gap    thanks    secondly    multifunctional    remaining    things    capability    retention    memory    innovate    electronics    cloud    volatility    groundbreaking    spin    magnetic    functionalities    functions    microelectronics    improvement    leadership    portable    gbit    sensor    20nm    realized    sub    data    types    dram    chips    computation    thirdly    memories    heterogeneous    power    industry    chip    analog    conventional    narrowing    transfer    integration    effort    junctions    magnetism    torque    mram    packaging    overcome    nodes    tunnel    position    definitely    strengthen    more    cmos    sram    communication    actions    follow    bandwidth    homogeneously    logic    communities    density    exists    difficulties    3d    sensing    intrachip    single    magical    prime    significantly    replacement    stt    internet    receiving    ultra    orientation    ultralow    iot    limitations    digital    solving    cultural    consumption   

Project "MAGICAL" data sheet

The following table provides information about the project.

Coordinator
COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES 

Organization address
address: RUE LEBLANC 25
city: PARIS 15
postcode: 75015
website: www.cea.fr

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country France [FR]
 Total cost 2˙500˙000 €
 EC max contribution 2˙500˙000 € (100%)
 Programme 1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC))
 Code Call ERC-2014-ADG
 Funding Scheme ERC-ADG
 Starting year 2015
 Duration (year-month-day) from 2015-11-01   to  2020-10-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES FR (PARIS 15) coordinator 2˙500˙000.00

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 Project objective

Spin Transfer Torque Magnetic memories (STT-MRAM) are receiving a growing R&D effort within the microelectronic industry aiming at the replacement of DRAM or SRAM at sub-20nm nodes. MAGICAL seeks to significantly innovate through groundbreaking advances in ultra-low power multifunctional systems based on hybrid CMOS/magnetic technology. With the development of portable electronics and of the Internet of Things (IOT), more and more functions must be embedded on chips: logic/memory, sensing, communication, etc. The current hurdles with today's technology are power consumption, communication bandwidth, processing/ packaging costs. MAGICAL will demonstrate that these limitations can be largely overcome through hybrid CMOS/magnetic technology. The project will follow three main goals: - Firstly, we will strengthen the STT-MRAM technology by investigating two novel ideas aiming at solving two remaining difficulties in sub-20nm STT-MRAM development: the nanostructuration of magnetic tunnel junctions and the long-term data retention. This will open the path to high density (>Gbit) STT-MRAM. -Secondly, we will demonstrate that Digital, analog (3D magnetic field sensing for orientation sensor), RF communication functions can be realized with the same baseline technology as the one developed for STT-MRAM. As a result, these three types of functions can be homogeneously integrated in a single chip, a major improvement compared to conventional heterogeneous integration. The prime benefits expected from MAGICAL are: ultralow power thanks to MRAM non volatility and on-chip computation capability, greatly improved communication functionalities (cloud as well as intrachip communication), reduced process/packaging costs. -Thirdly, through various actions, MAGICAL will aim at narrowing the cultural gap that still exists between magnetism and microelectronics communities. The project could definitely help the European microelectronic systems industry improve its leadership position.

 Publications

year authors and title journal last update
List of publications.
2019 Daniele Gastaldo, Nikita Strelkov, Liliana D. Buda-Prejbeanu, Bernard Dieny, Olivier Boulle, Paolo Allia, Paola Tiberto
Impact of Dzyaloshinskii-Moriya interactions on the thermal stability factor of heavy metal/magnetic metal/oxide based nano-pillars
published pages: 103905, ISSN: 0021-8979, DOI: 10.1063/1.5109484
Journal of Applied Physics 126/10 2020-03-11
2018 F. Ibrahim, A. Hallal, B. Dieny, M. Chshiev
Establishing characteristic behavior of voltage control of magnetic anisotropy by ionic migration
published pages: , ISSN: 2469-9950, DOI: 10.1103/PhysRevB.98.214441
Physical Review B 98/21 2020-03-11
2019 Jyotirmoy Chatterjee, Eric Gautier, Marc Veillerot, Ricardo C. Sousa, Stéphane Auffret, Bernard Dieny
Physicochemical origin of improvement of magnetic and transport properties of STT-MRAM cells using tungsten on FeCoB storage layer
published pages: 92407, ISSN: 0003-6951, DOI: 10.1063/1.5081912
Applied Physics Letters 114/9 2020-03-11
2017 B. Dieny, M. Chshiev
Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications
published pages: , ISSN: 0034-6861, DOI: 10.1103/RevModPhys.89.025008
Reviews of Modern Physics 89/2 2020-03-11
2016 Christophe Layer, Virgile Javerliac, Fabrice Bernard-Granger, Loic Decloedt, Laurent Becker, Kotb Jabeur, Sylvain Claireux, Bernard Dieny, Guillaume Prenat, Gregory Di Pendina, Stephane Gros, Pierre Paoli
Reducing System Power Consumption Using Check-Pointing on Nonvolatile Embedded Magnetic Random Access Memories
published pages: 1-24, ISSN: 1550-4832, DOI: 10.1145/2876507
ACM Journal on Emerging Technologies in Computing Systems 12/4 2019-07-04
2016 Hideo Ohno, Mark D. Stiles, Bernard Dieny
Spintronics [Scanning the Issue]
published pages: 1782-1786, ISSN: 0018-9219, DOI: 10.1109/JPROC.2016.2601163
Proceedings of the IEEE 104/10 2019-07-04
2016 A. A. Timopheev, R. Sousa, M. Chshiev, H. T. Nguyen, B. Dieny
Second order anisotropy contribution in perpendicular magnetic tunnel junctions
published pages: , ISSN: 2045-2322, DOI: 10.1038/srep26877
Scientific Reports 6/1 2019-07-04
2016 Léa Cuchet, Bernard Rodmacq, Stéphane Auffret, Ricardo C. Sousa, Ioan L. Prejbeanu, Bernard Dieny
Perpendicular magnetic tunnel junctions with a synthetic storage or reference layer: A new route towards Pt- and Pd-free junctions
published pages: , ISSN: 2045-2322, DOI: 10.1038/srep21246
Scientific Reports 6/1 2019-07-04
2016 C.?I.?L. de Araujo, S.?G. Alves, L.?D. Buda-Prejbeanu, B. Dieny
Multilevel Thermally Assisted Magnetoresistive Random-Access Memory Based on Exchange-Biased Vortex Configurations
published pages: 24015, ISSN: 2331-7019, DOI: 10.1103/PhysRevApplied.6.024015
Physical Review Applied 6/2 2019-07-04
2017 A. A. Timopheev, B. M. S. Teixeira, R. C. Sousa, S. Aufret, T. N. Nguyen, L. D. Buda-Prejbeanu, M. Chshiev, N. A. Sobolev, B. Dieny
Inhomogeneous free layer in perpendicular magnetic tunnel junctions and its impact on the effective anisotropies and spin transfer torque switching efficiency
published pages: , ISSN: 2469-9950, DOI: 10.1103/physrevb.96.014412
Physical Review B 96/1 2019-07-04
2016 F. Ibrahim, H. X. Yang, A. Hallal, B. Dieny, M. Chshiev
Anatomy of electric field control of perpendicular magnetic anisotropy at Fe/MgO interfaces
published pages: 14429, ISSN: 2469-9950, DOI: 10.1103/PhysRevB.93.014429
Physical Review B 93/1 2019-07-04
2016 Dmytro Apalkov, Bernard Dieny, J. M. Slaughter
Magnetoresistive Random Access Memory
published pages: 1796-1830, ISSN: 0018-9219, DOI: 10.1109/JPROC.2016.2590142
Proceedings of the IEEE 104/10 2019-07-04
2018 T Andrianov, A Vedyaev, B.Dieny
Magnetic modulation of inverse spin Hall effect in lateral spin-valves
published pages: 205003, ISSN: 0022-3727, DOI:
Journal of Physics D: Applied Physics 51/20 2019-07-04
2017 A. Vedyayev, N. Ryzhanova, N. Strelkov, M. Titova, M. Chshiev, B. Rodmacq, S. Auffret, L. Cuchet, L. Nistor, B. Dieny
Influence of spin-orbit interaction within the insulating barrier on the electron transport in magnetic tunnel junctions
published pages: , ISSN: 2469-9950, DOI: 10.1103/PhysRevB.95.064420
Physical Review B 95/6 2019-07-04
2017 Jyotirmoy Chatterjee, Ricardo C. Sousa, Nicolas Perrissin, Stéphane Auffret, Clarisse Ducruet, and Bernard Dieny
Enhanced annealing stability and perpendicular magnetic anisotropy in perpendicular magnetic tunnel junctions using W layer
published pages: 202401, ISSN: 0003-6951, DOI: 10.1063/1.4983159
Applied Physics Letters 110/20 2019-07-04
2018 Cheol Seong Hwang, Bernard Dieny
Advanced memory—Materials for a new era of information technology
published pages: 330-333, ISSN: 0883-7694, DOI: 10.1557/mrs.2018.96
MRS Bulletin 43/05 2019-07-04
2017 H. Garad, F. Fettar, F. Gay, Y. Joly, S. Auffret, B. Rodmacq, B. Dieny, L. Ortega
Temperature Variation of Magnetic Anisotropy in Pt / Co / AlO x Trilayers
published pages: 34023, ISSN: 2331-7019, DOI: 10.1103/PhysRevApplied.7.034023
Physical Review Applied 7/3 2019-07-04
2017 N. Strelkov, A. Timopheev, R. C. Sousa, M. Chshiev, L. D. Buda-Prejbeanu, B. Dieny
Stability phase diagram of a perpendicular magnetic tunnel junction in noncollinear geometry
published pages: 184409, ISSN: 2469-9950, DOI: 10.1103/PhysRevB.95.184409
Physical Review B 95/18 2019-07-04
2018 B. M. S. Teixeira, A. A. Timopheev, N. F. F. Caçoilo, S. Auffret, R. C. Sousa, B. Dieny, E. Alves, N. A. Sobolev
Ion irradiation-induced easy-cone anisotropy in double-MgO free layers for perpendicular magnetic tunnel junctions
published pages: 202403, ISSN: 0003-6951, DOI: 10.1063/1.5026854
Applied Physics Letters 112/20 2019-07-04
2015 M. Chshiev, A. Manchon, A. Kalitsov, N. Ryzhanova, A. Vedyayev, N. Strelkov, W. H. Butler, B. Dieny
Analytical description of ballistic spin currents and torques in magnetic tunnel junctions
published pages: , ISSN: 1098-0121, DOI: 10.1103/PhysRevB.92.104422
Physical Review B 92/10 2019-07-04
2018 Bernard Dieny, Mair Chshiev, Brian Charles, Nikita Strelkov, Alain Truong, Olivier Fruchart, Ali Hallal, Jian Wang, Yukiko K. Takahashi, Tomohito Mizuno, Kazuhiro Hono
Impact of Intergrain Spin-Transfer Torques Due to Huge Thermal Gradients in Heat-Assisted Magnetic Recording
published pages: 1-11, ISSN: 0018-9464, DOI: 10.1109/tmag.2018.2863225
IEEE Transactions on Magnetics 54/12 2019-04-18
2018 Jyotirmoy Chatterjee, Stephane Auffret, Ricardo Sousa, Paulo Coelho, Ioan-Lucian Prejbeanu, Bernard Dieny
Novel multifunctional RKKY coupling layer for ultrathin perpendicular synthetic antiferromagnet
published pages: , ISSN: 2045-2322, DOI: 10.1038/s41598-018-29913-6
Scientific Reports 8/1 2019-04-18
2018 Nicolas Perrissin Fabert
Miniaturisation extrême de mémoires STT-MRAM: couche de stockage à anisotropie de forme perpendiculaire
published pages: , ISSN: , DOI:
2019-02-22
2018 A. Vedyayev, N. Ryzhanova, N. Strelkov, T. Andrianov, A. Lobachev, B. Dieny
Nonlocal Signal and Noise in T -Shaped Lateral Spin-Valve Structures
published pages: , ISSN: 2331-7019, DOI: 10.1103/physrevapplied.10.064047
Physical Review Applied 10/6 2019-02-22
2018 N. Strelkov, A. Chavent, A. Timopheev, R. C. Sousa, I. L. Prejbeanu, L. D. Buda-Prejbeanu, B. Dieny
Impact of Joule heating on the stability phase diagrams of perpendicular magnetic tunnel junctions
published pages: , ISSN: 2469-9950, DOI: 10.1103/physrevb.98.214410
Physical Review B 98/21 2019-02-22

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