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BrightPhoton SIGNED

Black phosphorus interlayer coupling in heterostructures with boron nitride for photonics

Total Cost €


EC-Contrib. €






 BrightPhoton project word cloud

Explore the words cloud of the BrightPhoton project. It provides you a very rough idea of what is the project "BrightPhoton" about.

mobility    echoes    confinement    chemical    mid    materials    sandwiched    gaps    physics    boron    der    revealed    tunable    matters    layer    heterostructures    microscopy    skills    fundamental    sustainable    extremely    waals    atoms    electroluminescence    spectroscopy    transport    fabrication    hosting    visible    programm    complete    laboratory    link    stability    quantum    electron    energy    training    ambient    acquire    photonics    offers    leverage    expert    structural    lamellar    oxygen    charge    adsorbed    van    fast    depending    tervalent    infrared    phosphorus    coworkers    weak    exfoliated    water    opportunity    landscape    tem    momentum    customized    layers    stacked    interactions    semiconductors    photo    gap    2d    pristine    protective    career    synergy    electronic    scientific    synthesis    repatriation    nano    intercalated    bn    material    band    thickness    complementary    carrier    mode    black    thin    action    transmission    direct    eels    crystal    oxidation    trajectory    insulator    transfer    nitride    leads    french    activated    pi    monolayer    elemental    efficient    poor   

Project "BrightPhoton" data sheet

The following table provides information about the project.


Organization address
address: RUE MICHEL ANGE 3
city: PARIS
postcode: 75794

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country France [FR]
 Project website
 Total cost 185˙076 €
 EC max contribution 185˙076 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2015
 Funding Scheme MSCA-IF-EF-RI
 Starting year 2016
 Duration (year-month-day) from 2016-04-01   to  2018-03-31


Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 


 Project objective

Black Phosphorus or P(Black) is a lamellar crystal of tervalent P atoms stacked by weak Van der Waals interactions that can be exfoliated down to the monolayer. Recent results demonstrate that quantum confinement in P(Black) thin layers leads to promising electronic properties such as an extremely high carrier mobility and tunable direct band gaps from visible to mid-infrared depending on the layer thickness. These properties have significant echoes in photonics and 2D transport physics. Studying pristine P(black) thin layers is however challenging due to the poor chemical and structural stability of elemental phosphorus. Indeed, the PI and his coworkers recently revealed a photo-activated charge transfer process involving adsorbed oxygen and water in ambient conditions that leads to a strong photo-oxidation of P(Black). Our approach targets 1- the fabrication of nano-heterostructures based on P(Black) thin layers sandwiched and or intercalated with protective Boron Nitride (BN) insulator layers ; 2- the fundamental studies of this new type of material. The scientific program focuses on the band gap study of P(black) depending on the thickness by Transmission Electron microscopy (TEM) and on electroluminescence of P(black) based heterostructures. The project represents a major leverage in the career trajectory of the PI by a fast, efficient and sustainable repatriation of this new field of research in the French and European landscape, in complete synergy with the momentum given by the EU member states on 2D related materials. Moreover this action offers, via a strong and customized training programm, a unique opportunity to the PI to acquire new and complementary skills in Boron Nitride thin layer synthesis and TEM, especially the TEM-Energy Electron Loss Spectroscopy (EELS) operating mode, that is particularly well adapted for 2D semiconductors in the hosting laboratory fully expert in these matters and with which the PI has already developed a strong link.

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The information about "BRIGHTPHOTON" are provided by the European Opendata Portal: CORDIS opendata.

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