Explore the words cloud of the CHALLENGE project. It provides you a very rough idea of what is the project "CHALLENGE" about.
The following table provides information about the project.
Coordinator |
CONSIGLIO NAZIONALE DELLE RICERCHE
Organization address contact info |
Coordinator Country | Italy [IT] |
Project website | https://intranet.h2020challenge.eu |
Total cost | 8˙048˙322 € |
EC max contribution | 7˙997˙822 € (99%) |
Programme |
1. H2020-EU.2.1.3. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Advanced materials) |
Code Call | H2020-NMBP-2016-two-stage |
Funding Scheme | RIA |
Starting year | 2017 |
Duration (year-month-day) | from 2017-01-01 to 2020-12-31 |
Take a look of project's partnership.
# | ||||
---|---|---|---|---|
1 | CONSIGLIO NAZIONALE DELLE RICERCHE | IT (ROMA) | coordinator | 1˙680˙873.00 |
2 | L.P.E. SPA | IT (BARANZATE MILANO) | participant | 910˙625.00 |
3 | THE UNIVERSITY OF WARWICK | UK (COVENTRY) | participant | 706˙465.00 |
4 | LINKOPINGS UNIVERSITET | SE (LINKOPING) | participant | 661˙041.00 |
5 | ION BEAM SERVICES | FR (ROUSSET) | participant | 639˙125.00 |
6 | NOVASIC SA | FR (LE BOURGET DU LAC) | participant | 631˙146.00 |
7 | FRIEDRICH-ALEXANDER-UNIVERSITAET ERLANGEN NUERNBERG | DE (ERLANGEN) | participant | 502˙375.00 |
8 | ASCATRON AB | SE (KISTA) | participant | 500˙000.00 |
9 | UNIVERSITA' DEGLI STUDI DI MILANO-BICOCCA | IT (MILANO) | participant | 399˙250.00 |
10 | STMICROELECTRONICS SRL | IT (AGRATE BRIANZA) | participant | 333˙333.00 |
11 | ANVIL SEMICONDUCTORS LTD | UK (COVENTRY) | participant | 331˙313.00 |
12 | MOVERIM CONSULTING SPRL | BE (BRUXELLES) | participant | 309˙298.00 |
13 | SILVACO EUROPE LTD | UK (ST IVES) | participant | 253˙515.00 |
14 | SWANSEA UNIVERSITY | UK (SWANSEA) | participant | 139˙460.00 |
15 | CUSIC INC. | JP (SENDAI) | participant | 0.00 |
Silicon carbide presents a high breakdown field (2-4 MV/cm) and a high energy band gap (2.3–3.2 eV), largely higher than for silicon. Within this frame, the cubic polytype of SiC (3C-SiC) is the only one that can be grown on a host substrate with the huge opportunity to grow only the silicon carbide thickness required for the targeted application. The possible growth on silicon substrate has remained for long period a real advantage in terms of scalability regarding the reduced diameter of hexagonal SiC wafer commercially available. Even the relatively narrow band-gap of 3C-SiC (2.3eV), which is often regarded as detrimental in comparison with other polytypes, can in fact be an advantage. The lowering of the conduction band minimum brings about a reduced density of states at the SiO2/3C-SiC interface and MOSFET on 3C-SiC has demonstrated the highest channel mobility of above 300 cm2/(Vxs) ever achieved on SiC crystals, prompting a remarkable reduction in the power consumption of these power switching devices. The electrical activity of extended defects in 3C SiC is a major concern for electronic device functioning. To achieve viable commercial yields the mechanisms of defects must be understood and methods for their reduction developed.. In this project new approaches for the reduction of defects will be used, working on new compliance substrates that can help to reduce the stress and the defect density at the same time. This growth process will be driven by numerical simulations of the growth and simulations of the stress reduction. The structure of the final devices will be simulated using the appropriated numerical tools where new numerical model will be introduced to take into account the properties of the new material. Thanks to these simulations tools and the new material with low defect density, several devices that can work at high power and with low power consumption will be realized inside the project.
D6.8 | Other | 2020-01-20 16:08:03 |
D6.4 | Documents, reports | 2020-01-20 16:08:03 |
Take a look to the deliverables list in detail: detailed list of CHALLENGE deliverables.
year | authors and title | journal | last update |
---|---|---|---|
2017 |
Rositsa Yakimova, Ivan G. Ivanov, Lasse Vines, Margareta K. Linnarsson, Andreas Gällström, Filippo Giannazzo, Fabrizio Roccaforte, Peter Wellmann, Mikael Syväjärvi, Valdas Jokubavicius Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes published pages: P741-P745, ISSN: 2162-8769, DOI: 10.1149/2.0281710jss |
ECS Journal of Solid State Science and Technology 6/10 | 2020-01-30 |
2017 |
P. Schuh, M. Schöler, M. Wilhelm, M. Syväjärvi, G. Litrico, F. La Via, M. Mauceri, P.J. Wellmann Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers published pages: 159-162, ISSN: 0022-0248, DOI: 10.1016/j.jcrysgro.2017.09.002 |
Journal of Crystal Growth 478 | 2020-01-30 |
2019 |
Philipp Schuh, Johannes Steiner, Francesco La Via, Marco Mauceri, Marcin Zielinski, Peter J. Wellmann Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks published pages: 2353, ISSN: 1996-1944, DOI: 10.3390/ma12152353 |
Materials 12/15 | 2020-01-30 |
2019 |
M. Zimbone, M. Zielinski, E.G. Barbagiovanni, C. Calabretta, F. La Via 3C-SiC grown on Si by using a Si1-xGex buffer layer published pages: 1-6, ISSN: 0022-0248, DOI: 10.1016/j.jcrysgro.2019.03.029 |
Journal of Crystal Growth 519 | 2020-01-30 |
2020 |
Filippo Giannazzo, Giuseppe Greco, Salvatore Di Franco, Patrick Fiorenza, Ioannis Deretzis, Antonino La Magna, Corrado Bongiorno, Massimo Zimbone, Francesco La Via, Marcin Zielinski, Fabrizio Roccaforte Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy published pages: 1901171, ISSN: 2199-160X, DOI: 10.1002/aelm.201901171 |
Advanced Electronic Materials | 2020-01-30 |
2018 |
Antonino La Magna, Alessandra Alberti, Erik Barbagiovanni, Corrado Bongiorno, Michele Cascio, Ioannis Deretzis, Francesco La Via, Emanuele Smecca Simulation of the Growth Kinetics in Group IV Compound Semiconductors published pages: 1800597, ISSN: 1862-6300, DOI: 10.1002/pssa.201800597 |
physica status solidi (a) 216/10 | 2020-01-30 |
2019 |
Roberta Nipoti, Mariaconcetta Canino, Marcin Zielinski, Frank Torregrosa, Alberto Carnera 1300°C Annealing of 1 × 10 20  cm −3 Al + Ion Implanted 3C-SiC/Si published pages: P480-P487, ISSN: 2162-8769, DOI: 10.1149/2.0121909jss |
ECS Journal of Solid State Science and Technology 8/9 | 2020-01-30 |
2019 |
Michael Schöler, Maximilian W. Lederer, Philipp Schuh, Peter J. Wellmann Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters published pages: 1900286, ISSN: 0370-1972, DOI: 10.1002/pssb.201900286 |
physica status solidi (b) 257/1 | 2020-01-30 |
2018 |
Francesco La Via, Fabrizio Roccaforte, Antonino La Magna, Roberta Nipoti, Fulvio Mancarella, Peter Wellman, Danilo Crippa, Marco Mauceri, Peter Ward, Leo Miglio, Marcin Zielinski, Adolf Schöner, Ahmed Nejim, Laura Vivani, Rositza Yakimova, Mikael Syväjärvi, Gregory Grosset, Frank Torregrosa, Michael Jennings, Philip A. Mawby, Ruggero Anzalone, Salvatore Coffa, Hiroyuki Nagasawa 3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE) published pages: 913-918, ISSN: 1662-9752, DOI: 10.4028/www.scientific.net/msf.924.913 |
Materials Science Forum 924 | 2020-01-30 |
2019 |
Jingxin Jian, Yuchen Shi, Sebastian Ekeroth, Julien Keraudy, Mikael Syväjärvi, Rositsa Yakimova, Ulf Helmersson, Jianwu Sun A nanostructured NiO/cubic SiC p–n heterojunction photoanode for enhanced solar water splitting published pages: 4721-4728, ISSN: 2050-7488, DOI: 10.1039/c9ta00020h |
Journal of Materials Chemistry A 7/9 | 2020-01-30 |
2019 |
Yuchen Shi, Valdas Jokubavicius, Pontus Höjer, Ivan G Ivanov, G Reza Yazdi, Rositsa Yakimova, Mikael Syväjärvi, Jianwu Sun A comparative study of high-quality C-face and Si-face 3C-SiC(1 1 1) grown on off-oriented 4H-SiC substrates published pages: 345103, ISSN: 0022-3727, DOI: 10.1088/1361-6463/ab2859 |
Journal of Physics D: Applied Physics 52/34 | 2020-01-30 |
2018 |
Grazia Litrico, Ruggero Anzalone, Alessandra Alberti, Corrado Bongiorno, Giuseppe Nicotra, Massimo Zimbone, Marco Mauceri, Salvatore Coffa, Francesco La Via Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films published pages: 124-127, ISSN: 1662-9752, DOI: 10.4028/www.scientific.net/msf.924.124 |
Materials Science Forum 924 | 2020-01-30 |
2018 |
Yuchen Shi, Alexei A. Zakharov, Ivan G. Ivanov, G. Reza Yazdi, Valdas Jokubavicius, Mikael Syväjärvi, Rositsa Yakimova, Jianwu Sun Elimination of step bunching in the growth of large-area monolayer and multilayer graphene on off-axis 3C SiC (111) published pages: 533-542, ISSN: 0008-6223, DOI: 10.1016/j.carbon.2018.08.042 |
Carbon 140 | 2020-01-30 |
2019 |
Schuh, la Via, Mauceri, Zielinski, Wellmann Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth published pages: 2179, ISSN: 1996-1944, DOI: 10.3390/ma12132179 |
Materials 12/13 | 2020-01-30 |
2019 |
Massimo Zimbone, Marcin Zielinski, Corrado Bongiorno, Cristiano Calabretta, Ruggero Anzalone, Silvia Scalese, Giuseppe Fisicaro, Antonino La Magna, Fulvio Mancarella, Francesco La Via 3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate published pages: 3407, ISSN: 1996-1944, DOI: 10.3390/ma12203407 |
Materials 12/20 | 2020-01-20 |
2019 |
Anzalone, Zimbone, Calabretta, Mauceri, Alberti, Reitano, La Via Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers published pages: 3293, ISSN: 1996-1944, DOI: 10.3390/ma12203293 |
Materials 12/20 | 2020-01-20 |
2018 |
Marco Albani, Anna Marzegalli, Roberto Bergamaschini, Marco Mauceri, Danilo Crippa, Francesco La Via, Hans von Känel, Leo Miglio Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture published pages: 185703, ISSN: 0021-8979, DOI: 10.1063/1.5019325 |
Journal of Applied Physics 123/18 | 2020-01-20 |
2018 |
F. La Via, A. Severino, R. Anzalone, C. Bongiorno, G. Litrico, M. Mauceri, M. Schoeler, P. Schuh, P. Wellmann From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction published pages: 57-68, ISSN: 1369-8001, DOI: 10.1016/j.mssp.2017.12.012 |
Materials Science in Semiconductor Processing 78 | 2020-01-20 |
2018 |
Massimo Zimbone, Marco Mauceri, Grazia Litrico, Eric Gasparo Barbagiovanni, Corrado Bongiorno, Francesco La Via Protrusions reduction in 3C-SiC thin film on Si published pages: 248-257, ISSN: 0022-0248, DOI: 10.1016/j.jcrysgro.2018.06.003 |
Journal of Crystal Growth 498 | 2020-01-20 |
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The information about "CHALLENGE" are provided by the European Opendata Portal: CORDIS opendata.
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