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3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices

Total Cost €


EC-Contrib. €






Project "CHALLENGE" data sheet

The following table provides information about the project.


Organization address
city: ROMA
postcode: 185

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Italy [IT]
 Project website
 Total cost 8˙048˙322 €
 EC max contribution 7˙997˙822 € (99%)
 Programme 1. H2020-EU.2.1.3. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Advanced materials)
 Code Call H2020-NMBP-2016-two-stage
 Funding Scheme RIA
 Starting year 2017
 Duration (year-month-day) from 2017-01-01   to  2020-12-31


Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    CONSIGLIO NAZIONALE DELLE RICERCHE IT (ROMA) coordinator 1˙680˙873.00
2    L.P.E. SPA IT (BARANZATE MILANO) participant 910˙625.00
3    THE UNIVERSITY OF WARWICK UK (COVENTRY) participant 706˙465.00
4    LINKOPINGS UNIVERSITET SE (LINKOPING) participant 661˙041.00
5    ION BEAM SERVICES FR (ROUSSET) participant 639˙125.00
6    NOVASIC SA FR (LE BOURGET DU LAC) participant 631˙146.00
8    ASCATRON AB SE (KISTA) participant 500˙000.00
11    ANVIL SEMICONDUCTORS LTD UK (COVENTRY) participant 331˙313.00
12    MOVERIM CONSULTING SPRL BE (BRUXELLES) participant 309˙298.00
13    SILVACO EUROPE LTD UK (ST IVES) participant 253˙515.00
14    SWANSEA UNIVERSITY UK (SWANSEA) participant 139˙460.00
15    CUSIC INC. JP (SENDAI) participant 0.00


 Project objective

Silicon carbide presents a high breakdown field (2-4 MV/cm) and a high energy band gap (2.3–3.2 eV), largely higher than for silicon. Within this frame, the cubic polytype of SiC (3C-SiC) is the only one that can be grown on a host substrate with the huge opportunity to grow only the silicon carbide thickness required for the targeted application. The possible growth on silicon substrate has remained for long period a real advantage in terms of scalability regarding the reduced diameter of hexagonal SiC wafer commercially available. Even the relatively narrow band-gap of 3C-SiC (2.3eV), which is often regarded as detrimental in comparison with other polytypes, can in fact be an advantage. The lowering of the conduction band minimum brings about a reduced density of states at the SiO2/3C-SiC interface and MOSFET on 3C-SiC has demonstrated the highest channel mobility of above 300 cm2/(Vxs) ever achieved on SiC crystals, prompting a remarkable reduction in the power consumption of these power switching devices. The electrical activity of extended defects in 3C SiC is a major concern for electronic device functioning. To achieve viable commercial yields the mechanisms of defects must be understood and methods for their reduction developed.. In this project new approaches for the reduction of defects will be used, working on new compliance substrates that can help to reduce the stress and the defect density at the same time. This growth process will be driven by numerical simulations of the growth and simulations of the stress reduction. The structure of the final devices will be simulated using the appropriated numerical tools where new numerical model will be introduced to take into account the properties of the new material. Thanks to these simulations tools and the new material with low defect density, several devices that can work at high power and with low power consumption will be realized inside the project.


List of deliverables.
D6.8 Other 2020-01-20 16:08:03
D6.4 Documents, reports 2020-01-20 16:08:03

Take a look to the deliverables list in detail:  detailed list of CHALLENGE deliverables.


year authors and title journal last update
List of publications.
2017 Rositsa Yakimova, Ivan G. Ivanov, Lasse Vines, Margareta K. Linnarsson, Andreas Gällström, Filippo Giannazzo, Fabrizio Roccaforte, Peter Wellmann, Mikael Syväjärvi, Valdas Jokubavicius
Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes
published pages: P741-P745, ISSN: 2162-8769, DOI: 10.1149/2.0281710jss
ECS Journal of Solid State Science and Technology 6/10 2020-01-30
2017 P. Schuh, M. Schöler, M. Wilhelm, M. Syväjärvi, G. Litrico, F. La Via, M. Mauceri, P.J. Wellmann
Sublimation growth of bulk 3C-SiC using 3C-SiC-on-Si (1 0 0) seeding layers
published pages: 159-162, ISSN: 0022-0248, DOI: 10.1016/j.jcrysgro.2017.09.002
Journal of Crystal Growth 478 2020-01-30
2019 Philipp Schuh, Johannes Steiner, Francesco La Via, Marco Mauceri, Marcin Zielinski, Peter J. Wellmann
Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks
published pages: 2353, ISSN: 1996-1944, DOI: 10.3390/ma12152353
Materials 12/15 2020-01-30
2019 M. Zimbone, M. Zielinski, E.G. Barbagiovanni, C. Calabretta, F. La Via
3C-SiC grown on Si by using a Si1-xGex buffer layer
published pages: 1-6, ISSN: 0022-0248, DOI: 10.1016/j.jcrysgro.2019.03.029
Journal of Crystal Growth 519 2020-01-30
2020 Filippo Giannazzo, Giuseppe Greco, Salvatore Di Franco, Patrick Fiorenza, Ioannis Deretzis, Antonino La Magna, Corrado Bongiorno, Massimo Zimbone, Francesco La Via, Marcin Zielinski, Fabrizio Roccaforte
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy
published pages: 1901171, ISSN: 2199-160X, DOI: 10.1002/aelm.201901171
Advanced Electronic Materials 2020-01-30
2018 Antonino La Magna, Alessandra Alberti, Erik Barbagiovanni, Corrado Bongiorno, Michele Cascio, Ioannis Deretzis, Francesco La Via, Emanuele Smecca
Simulation of the Growth Kinetics in Group IV Compound Semiconductors
published pages: 1800597, ISSN: 1862-6300, DOI: 10.1002/pssa.201800597
physica status solidi (a) 216/10 2020-01-30
2019 Roberta Nipoti, Mariaconcetta Canino, Marcin Zielinski, Frank Torregrosa, Alberto Carnera
1300°C Annealing of 1 × 10 20  cm −3 Al + Ion Implanted 3C-SiC/Si
published pages: P480-P487, ISSN: 2162-8769, DOI: 10.1149/2.0121909jss
ECS Journal of Solid State Science and Technology 8/9 2020-01-30
2019 Michael Schöler, Maximilian W. Lederer, Philipp Schuh, Peter J. Wellmann
Intentional Incorporation and Tailoring of Point Defects during Sublimation Growth of Cubic Silicon Carbide by Variation of Process Parameters
published pages: 1900286, ISSN: 0370-1972, DOI: 10.1002/pssb.201900286
physica status solidi (b) 257/1 2020-01-30
2018 Francesco La Via, Fabrizio Roccaforte, Antonino La Magna, Roberta Nipoti, Fulvio Mancarella, Peter Wellman, Danilo Crippa, Marco Mauceri, Peter Ward, Leo Miglio, Marcin Zielinski, Adolf Schöner, Ahmed Nejim, Laura Vivani, Rositza Yakimova, Mikael Syväjärvi, Gregory Grosset, Frank Torregrosa, Michael Jennings, Philip A. Mawby, Ruggero Anzalone, Salvatore Coffa, Hiroyuki Nagasawa
3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)
published pages: 913-918, ISSN: 1662-9752, DOI: 10.4028/
Materials Science Forum 924 2020-01-30
2019 Jingxin Jian, Yuchen Shi, Sebastian Ekeroth, Julien Keraudy, Mikael Syväjärvi, Rositsa Yakimova, Ulf Helmersson, Jianwu Sun
A nanostructured NiO/cubic SiC p–n heterojunction photoanode for enhanced solar water splitting
published pages: 4721-4728, ISSN: 2050-7488, DOI: 10.1039/c9ta00020h
Journal of Materials Chemistry A 7/9 2020-01-30
2019 Yuchen Shi, Valdas Jokubavicius, Pontus Höjer, Ivan G Ivanov, G Reza Yazdi, Rositsa Yakimova, Mikael Syväjärvi, Jianwu Sun
A comparative study of high-quality C-face and Si-face 3C-SiC(1 1 1) grown on off-oriented 4H-SiC substrates
published pages: 345103, ISSN: 0022-3727, DOI: 10.1088/1361-6463/ab2859
Journal of Physics D: Applied Physics 52/34 2020-01-30
2018 Grazia Litrico, Ruggero Anzalone, Alessandra Alberti, Corrado Bongiorno, Giuseppe Nicotra, Massimo Zimbone, Marco Mauceri, Salvatore Coffa, Francesco La Via
Stacking Faults Defects on 3C-SiC Homo-Epitaxial Films
published pages: 124-127, ISSN: 1662-9752, DOI: 10.4028/
Materials Science Forum 924 2020-01-30
2018 Yuchen Shi, Alexei A. Zakharov, Ivan G. Ivanov, G. Reza Yazdi, Valdas Jokubavicius, Mikael Syväjärvi, Rositsa Yakimova, Jianwu Sun
Elimination of step bunching in the growth of large-area monolayer and multilayer graphene on off-axis 3C SiC (111)
published pages: 533-542, ISSN: 0008-6223, DOI: 10.1016/j.carbon.2018.08.042
Carbon 140 2020-01-30
2019 Schuh, la Via, Mauceri, Zielinski, Wellmann
Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth
published pages: 2179, ISSN: 1996-1944, DOI: 10.3390/ma12132179
Materials 12/13 2020-01-30
2019 Massimo Zimbone, Marcin Zielinski, Corrado Bongiorno, Cristiano Calabretta, Ruggero Anzalone, Silvia Scalese, Giuseppe Fisicaro, Antonino La Magna, Fulvio Mancarella, Francesco La Via
3C-SiC Growth on Inverted Silicon Pyramids Patterned Substrate
published pages: 3407, ISSN: 1996-1944, DOI: 10.3390/ma12203407
Materials 12/20 2020-01-20
2019 Anzalone, Zimbone, Calabretta, Mauceri, Alberti, Reitano, La Via
Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers
published pages: 3293, ISSN: 1996-1944, DOI: 10.3390/ma12203293
Materials 12/20 2020-01-20
2018 Marco Albani, Anna Marzegalli, Roberto Bergamaschini, Marco Mauceri, Danilo Crippa, Francesco La Via, Hans von Känel, Leo Miglio
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture
published pages: 185703, ISSN: 0021-8979, DOI: 10.1063/1.5019325
Journal of Applied Physics 123/18 2020-01-20
2018 F. La Via, A. Severino, R. Anzalone, C. Bongiorno, G. Litrico, M. Mauceri, M. Schoeler, P. Schuh, P. Wellmann
From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction
published pages: 57-68, ISSN: 1369-8001, DOI: 10.1016/j.mssp.2017.12.012
Materials Science in Semiconductor Processing 78 2020-01-20
2018 Massimo Zimbone, Marco Mauceri, Grazia Litrico, Eric Gasparo Barbagiovanni, Corrado Bongiorno, Francesco La Via
Protrusions reduction in 3C-SiC thin film on Si
published pages: 248-257, ISSN: 0022-0248, DOI: 10.1016/j.jcrysgro.2018.06.003
Journal of Crystal Growth 498 2020-01-20

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