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GaNonCMOS SIGNED

GaN densily integrated with Si-CMOS for reliable, cost effective high frequency power delivery systems

Total Cost €

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EC-Contrib. €

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Partnership

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 GaNonCMOS project word cloud

Explore the words cloud of the GaNonCMOS project. It provides you a very rough idea of what is the project "GaNonCMOS" about.

switching    load    densely    aviation    improvements    drivers    internet    full    transmission    mws    speed    wafers    flow    will    maturity    magnetic    industries    maximum    gws    electronic    packages    mobility    gap    drive    stack    ganoncmos    practical    core    bonding    capability    gan    universities    vendors    switches    realized    soft    cover    optimization    integrating    lines    ultralow    automotive    si    centers    incorporate    max    efficiency    reaching    generation    mobile    special    200    date    chip    efficiencies    reliability    111    integration    materials    off    electrical    fabrication    phones    enabled    intensive    assembled    chain    energy    variety    toward    temperatures    electronics    wafer    losses    mhz    frequencies    semiconductors    sme    power    modules    schemes    voltages    temperature    source    bikes    pave    datacenters    400oc    normally    miniaturised    operate    layout    cmos    entire    band    device   

Project "GaNonCMOS" data sheet

The following table provides information about the project.

Coordinator
KATHOLIEKE UNIVERSITEIT LEUVEN 

Organization address
address: OUDE MARKT 13
city: LEUVEN
postcode: 3000
website: www.kuleuven.be

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Belgium [BE]
 Project website http://www.ganoncmos.eu
 Total cost 7˙428˙885 €
 EC max contribution 6˙246˙064 € (84%)
 Programme 1. H2020-EU.2.1.3. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Advanced materials)
 Code Call H2020-NMBP-2016-two-stage
 Funding Scheme RIA
 Starting year 2017
 Duration (year-month-day) from 2017-01-01   to  2020-12-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    KATHOLIEKE UNIVERSITEIT LEUVEN BE (LEUVEN) coordinator 801˙808.00
2    UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK IE (Cork) participant 1˙540˙265.00
3    IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK DE (FRANKFURT ODER) participant 1˙014˙541.00
4    FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. DE (MUNCHEN) participant 705˙800.00
5    EPIGAN NV BE (Hasselt) participant 619˙663.00
6    RECOM ENGINEERING GMBH & CO KG AT (GMUNDEN) participant 612˙130.00
7    AT & S AUSTRIA TECHNOLOGIE & SYSTEMTECHNIK AKTIENGESELLSCHAFT AT (LEOBEN) participant 523˙075.00
8    PNO CONSULTANTS NV BE (ZAVENTEM) participant 323˙718.00
9    X-FAB SEMICONDUCTOR FOUNDRIES GMBH DE (ERFURT) participant 105˙062.00
10    IBM RESEARCH GMBH CH (RUESCHLIKON) participant 0.00
11    NXP SEMICONDUCTORS NETHERLANDS BV NL (EINDHOVEN) participant 0.00
12    PNO INNOVATION BE (ZAVENTEM) participant 0.00

Map

 Project objective

Power electronics is the key technology to control the flow of electrical energy between source and load for a wide variety of applications from the GWs in energy transmission lines, the MWs in datacenters that power the internet to the mWs in mobile phones. Wide band gap semiconductors such as GaN use their capability to operate at higher voltages, temperatures, and switching frequencies with greater efficiencies. The GaNonCMOS project aims to bring GaN power electronic materials, devices and systems to the next level of maturity by providing the most densely integrated materials to date. This development will drive a new generation of densely integrated power electronics and pave the way toward low cost, highly reliable systems for energy intensive applications.

This will be realized by integrating GaN power switches with CMOS drivers densely together using different integration schemes from the package level up to the chip level including wafer bonding between GaN on Si(111) and CMOS on Si (100) wafers. This requires the optimization of the GaN materials stack and device layout to enable fabrication of normally-off devices for such low temperature integration processes (max 400oC). In addition, new soft magnetic core materials reaching switching frequencies up to 200 Mhz with ultralow power losses will be developed. This will be assembled with new materials and methods for miniaturised packages to allow GaN devices, modules and systems to operate under maximum speed and energy efficiency. A special focus is on the long term reliability improvements over the full value chain of materials, devices, modules and systems. This is enabled by the choice of consortium partners that cover the entire value chain from universities, research centers, SME’s, large industries and vendors that incorporate the developed technology into practical systems such as datacenters, automotive, aviation and e-mobility bikes

 Publications

year authors and title journal last update
List of publications.
2018 Stefan Eisenbrandt and Ralf Lerner
Printing GaN HEMTs onto silicon CMOS
published pages: , ISSN: 1096-598X, DOI:
Compound Semiconductor Magazine 2020-04-24

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The information about "GANONCMOS" are provided by the European Opendata Portal: CORDIS opendata.

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