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GaNonCMOS SIGNED

GaN densily integrated with Si-CMOS for reliable, cost effective high frequency power delivery systems

Total Cost €

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EC-Contrib. €

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Partnership

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 GaNonCMOS project word cloud

Explore the words cloud of the GaNonCMOS project. It provides you a very rough idea of what is the project "GaNonCMOS" about.

maximum    reaching    bikes    chip    speed    band    electrical    ganoncmos    sme    capability    temperatures    transmission    frequencies    bonding    will    industries    si    mws    variety    switches    improvements    assembled    chain    flow    internet    wafer    wafers    integration    reliability    200    switching    phones    load    ultralow    integrating    practical    losses    full    energy    operate    datacenters    cover    electronic    gap    layout    optimization    densely    efficiency    semiconductors    intensive    mobility    pave    fabrication    materials    gws    cmos    vendors    power    automotive    schemes    temperature    400oc    packages    centers    electronics    max    off    maturity    enabled    universities    aviation    efficiencies    toward    soft    mhz    stack    source    core    drive    miniaturised    device    entire    lines    magnetic    generation    drivers    gan    111    incorporate    date    modules    voltages    realized    normally    special    mobile   

Project "GaNonCMOS" data sheet

The following table provides information about the project.

Coordinator
KATHOLIEKE UNIVERSITEIT LEUVEN 

Organization address
address: OUDE MARKT 13
city: LEUVEN
postcode: 3000
website: www.kuleuven.be

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Belgium [BE]
 Project website http://www.ganoncmos.eu
 Total cost 7˙428˙885 €
 EC max contribution 6˙246˙064 € (84%)
 Programme 1. H2020-EU.2.1.3. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Advanced materials)
 Code Call H2020-NMBP-2016-two-stage
 Funding Scheme RIA
 Starting year 2017
 Duration (year-month-day) from 2017-01-01   to  2020-12-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    KATHOLIEKE UNIVERSITEIT LEUVEN BE (LEUVEN) coordinator 801˙808.00
2    UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK IE (Cork) participant 1˙540˙265.00
3    IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK DE (FRANKFURT ODER) participant 1˙014˙541.00
4    FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. DE (MUNCHEN) participant 705˙800.00
5    EPIGAN NV BE (Hasselt) participant 619˙663.00
6    RECOM ENGINEERING GMBH & CO KG AT (GMUNDEN) participant 612˙130.00
7    AT & S AUSTRIA TECHNOLOGIE & SYSTEMTECHNIK AKTIENGESELLSCHAFT AT (LEOBEN) participant 523˙075.00
8    PNO CONSULTANTS NV BE (ZAVENTEM) participant 323˙718.00
9    X-FAB SEMICONDUCTOR FOUNDRIES GMBH DE (ERFURT) participant 105˙062.00
10    IBM RESEARCH GMBH CH (RUESCHLIKON) participant 0.00
11    NXP SEMICONDUCTORS NETHERLANDS BV NL (EINDHOVEN) participant 0.00
12    PNO INNOVATION BE (ZAVENTEM) participant 0.00

Map

 Project objective

Power electronics is the key technology to control the flow of electrical energy between source and load for a wide variety of applications from the GWs in energy transmission lines, the MWs in datacenters that power the internet to the mWs in mobile phones. Wide band gap semiconductors such as GaN use their capability to operate at higher voltages, temperatures, and switching frequencies with greater efficiencies. The GaNonCMOS project aims to bring GaN power electronic materials, devices and systems to the next level of maturity by providing the most densely integrated materials to date. This development will drive a new generation of densely integrated power electronics and pave the way toward low cost, highly reliable systems for energy intensive applications.

This will be realized by integrating GaN power switches with CMOS drivers densely together using different integration schemes from the package level up to the chip level including wafer bonding between GaN on Si(111) and CMOS on Si (100) wafers. This requires the optimization of the GaN materials stack and device layout to enable fabrication of normally-off devices for such low temperature integration processes (max 400oC). In addition, new soft magnetic core materials reaching switching frequencies up to 200 Mhz with ultralow power losses will be developed. This will be assembled with new materials and methods for miniaturised packages to allow GaN devices, modules and systems to operate under maximum speed and energy efficiency. A special focus is on the long term reliability improvements over the full value chain of materials, devices, modules and systems. This is enabled by the choice of consortium partners that cover the entire value chain from universities, research centers, SME’s, large industries and vendors that incorporate the developed technology into practical systems such as datacenters, automotive, aviation and e-mobility bikes

 Publications

year authors and title journal last update
List of publications.
2018 Stefan Eisenbrandt and Ralf Lerner
Printing GaN HEMTs onto silicon CMOS
published pages: , ISSN: 1096-598X, DOI:
Compound Semiconductor Magazine 2020-04-24

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The information about "GANONCMOS" are provided by the European Opendata Portal: CORDIS opendata.

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