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GaNonCMOS SIGNED

GaN densily integrated with Si-CMOS for reliable, cost effective high frequency power delivery systems

Total Cost €

EC-Contrib. €

Partnership

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Outcomes and
results

GaNonCMOS project word cloud

Explore the words cloud of the GaNonCMOS project. It provides you a very rough idea of what is the project "GaNonCMOS" about.

integration chip wafers flow semiconductors speed assembled switching voltages gws integrating maximum 111 mws internet universities electrical cover chain vendors toward mobile miniaturised temperatures intensive maturity bikes datacenters schemes packages transmission mobility source pave efficiency drive si special drivers phones enabled electronic fabrication incorporate materials realized full operate aviation centers electronics capability sme gap layout mhz densely efficiencies industries off normally device core generation wafer energy gan temperature lines 200 ultralow frequencies load date entire bonding 400oc band soft automotive max practical reaching modules variety losses magnetic reliability improvements switches cmos optimization power stack ganoncmos will

Project "GaNonCMOS" data sheet

The following table provides information about the project.

Coordinator	KATHOLIEKE UNIVERSITEIT LEUVEN Organization address address: OUDE MARKT 13 city: LEUVEN postcode: 3000 website: www.kuleuven.be contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.
Coordinator Country	Belgium [BE]
Project website	http://www.ganoncmos.eu
Total cost	7˙428˙885 €
EC max contribution	6˙246˙064 € (84%)
Programme	1. H2020-EU.2.1.3. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Advanced materials)
Code Call	H2020-NMBP-2016-two-stage
Funding Scheme	RIA
Starting year	2017
Duration (year-month-day)	from 2017-01-01 to 2020-12-31

Partnership

Take a look of project's partnership.

#	participants	country	role	EC contrib. [€]
1	KATHOLIEKE UNIVERSITEIT LEUVEN KATHOLIEKE UNIVERSITEIT LEUVEN Organization address address: OUDE MARKT 13 city: LEUVEN postcode: 3000 website: www.kuleuven.be contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	BE (LEUVEN)	coordinator	801˙808.00
2	UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK Organization address address: WESTERN ROAD city: Cork postcode: T12 YN60 website: www.ucc.ie contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	IE (Cork)	participant	1˙540˙265.00
3	IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK Organization address address: IM TECHNOLOGIEPARK 25 city: FRANKFURT ODER postcode: 15236 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (FRANKFURT ODER)	participant	1˙014˙541.00
4	FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. Organization address address: HANSASTRASSE 27C city: MUNCHEN postcode: 80686 website: www.fraunhofer.de contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (MUNCHEN)	participant	705˙800.00
5	EPIGAN NV EPIGAN NV Organization address address: Kempische Steenweg 293 city: Hasselt postcode: 3500 website: www.epigan.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	BE (Hasselt)	participant	619˙663.00
6	RECOM ENGINEERING GMBH & CO KG RECOM ENGINEERING GMBH & CO KG Organization address address: MUNZFELD 35 city: GMUNDEN postcode: 4810 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	AT (GMUNDEN)	participant	612˙130.00
7	AT & S AUSTRIA TECHNOLOGIE & SYSTEMTECHNIK AKTIENGESELLSCHAFT AT & S AUSTRIA TECHNOLOGIE & SYSTEMTECHNIK AKTIENGESELLSCHAFT Organization address address: FABRIKSGASSE 13 city: LEOBEN postcode: 8700 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	AT (LEOBEN)	participant	523˙075.00
8	PNO CONSULTANTS NV PNO CONSULTANTS NV Organization address address: EXCELSIORLAAN 51 city: ZAVENTEM postcode: 1930 website: www.pnoconsultants.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	BE (ZAVENTEM)	participant	323˙718.00
9	X-FAB SEMICONDUCTOR FOUNDRIES GMBH X-FAB SEMICONDUCTOR FOUNDRIES GMBH Organization address address: HAARBERGSTRASSE 67 city: ERFURT postcode: 99097 website: www.xfab.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	DE (ERFURT)	participant	105˙062.00
10	IBM RESEARCH GMBH IBM RESEARCH GMBH Organization address address: SAEUMERSTRASSE 4 city: RUESCHLIKON postcode: 8803 website: www.zurich.ibm.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	CH (RUESCHLIKON)	participant	0.00
11	NXP SEMICONDUCTORS NETHERLANDS BV NXP SEMICONDUCTORS NETHERLANDS BV Organization address address: HIGH TECH CAMPUS 60 city: EINDHOVEN postcode: 5656AG website: www.nxp.com contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	NL (EINDHOVEN)	participant	0.00
12	PNO INNOVATION PNO INNOVATION Organization address address: EXCELSIORLAAN 51 city: ZAVENTEM postcode: 1930 website: n.a. contact info title: n.a. name: n.a. surname: n.a. function: n.a. email: n.a. telephone: n.a. fax: n.a.	BE (ZAVENTEM)	participant	0.00

Map

Project objective

Power electronics is the key technology to control the flow of electrical energy between source and load for a wide variety of applications from the GWs in energy transmission lines, the MWs in datacenters that power the internet to the mWs in mobile phones. Wide band gap semiconductors such as GaN use their capability to operate at higher voltages, temperatures, and switching frequencies with greater efficiencies. The GaNonCMOS project aims to bring GaN power electronic materials, devices and systems to the next level of maturity by providing the most densely integrated materials to date. This development will drive a new generation of densely integrated power electronics and pave the way toward low cost, highly reliable systems for energy intensive applications.

This will be realized by integrating GaN power switches with CMOS drivers densely together using different integration schemes from the package level up to the chip level including wafer bonding between GaN on Si(111) and CMOS on Si (100) wafers. This requires the optimization of the GaN materials stack and device layout to enable fabrication of normally-off devices for such low temperature integration processes (max 400oC). In addition, new soft magnetic core materials reaching switching frequencies up to 200 Mhz with ultralow power losses will be developed. This will be assembled with new materials and methods for miniaturised packages to allow GaN devices, modules and systems to operate under maximum speed and energy efficiency. A special focus is on the long term reliability improvements over the full value chain of materials, devices, modules and systems. This is enabled by the choice of consortium partners that cover the entire value chain from universities, research centers, SME’s, large industries and vendors that incorporate the developed technology into practical systems such as datacenters, automotive, aviation and e-mobility bikes

Publications

List of publications.
year	authors and title	journal	last update
2018	Stefan Eisenbrandt and Ralf Lerner Printing GaN HEMTs onto silicon CMOS published pages: , ISSN: 1096-598X, DOI:	Compound Semiconductor Magazine	2020-04-24

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The information about "GANONCMOS" are provided by the European Opendata Portal: CORDIS opendata.