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2D-TOPSENSE SIGNED

Tunable optoelectronic devices by strain engineering of 2D semiconductors

Total Cost €

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EC-Contrib. €

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Partnership

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 2D-TOPSENSE project word cloud

Explore the words cloud of the 2D-TOPSENSE project. It provides you a very rough idea of what is the project "2D-TOPSENSE" about.

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Project "2D-TOPSENSE" data sheet

The following table provides information about the project.

Coordinator
AGENCIA ESTATAL CONSEJO SUPERIOR DEINVESTIGACIONES CIENTIFICAS 

Organization address
address: CALLE SERRANO 117
city: MADRID
postcode: 28006
website: http://www.csic.es

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Spain [ES]
 Total cost 1˙930˙437 €
 EC max contribution 1˙930˙437 € (100%)
 Programme 1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC))
 Code Call ERC-2017-STG
 Funding Scheme ERC-STG
 Starting year 2018
 Duration (year-month-day) from 2018-03-01   to  2023-02-28

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    AGENCIA ESTATAL CONSEJO SUPERIOR DEINVESTIGACIONES CIENTIFICAS ES (MADRID) coordinator 1˙930˙437.00

Map

 Project objective

The goal of 2D-TOPSENSE is to exploit the remarkable stretchability of two-dimensional semiconductors to fabricate optoelectronic devices where strain is used as an external knob to tune their properties.

While bulk semiconductors tend to break under strains larger than 1.5%, 2D semiconductors (such as MoS2) can withstand deformations of up to 10-20% before rupture. This large breaking strength promises a great potential of 2D semiconductors as ‘straintronic’ materials, whose properties can be adjusted by applying a deformation to their lattice. In fact, recent theoretical works predicted an interesting physical phenomenon: a tensile strain-induced semiconductor-to-metal transition in 2D semiconductors. By tensioning single-layer MoS2 from 0% up to 10%, its electronic band structure is expected to undergo a continuous transition from a wide direct band-gap of 1.8 eV to a metallic behavior. This unprecedented large strain-tunability will undoubtedly have a strong impact in a wide range of optoelectronic applications such as photodetectors whose cut-off wavelength is tuned by varying the applied strain or atomically thin light modulators.

To date, experimental works on strain engineering have been mostly focused on fundamental studies, demonstrating part of the potential of 2D semiconductors in straintronics, but they have failed to exploit strain engineering to add extra functionalities to optoelectronic devices. In 2D-TOPSENSE I will go beyond the state of the art in straintronics by designing and fabricating optoelectronic devices whose properties and performance can be tuned by means of applying strain. 2D-TOPSENSE will focus on photodetectors with a tunable bandwidth and detectivity, light emitting devices whose emission wavelength can be adjusted, light modulators based on 2D semiconductors such as transition metal dichalcogenides or black phosphorus and solar funnels capable of directing the photogenerated charge carriers towards a specific position.

 Publications

year authors and title journal last update
List of publications.
2019 Najme S. Taghavi, Patricia Gant, Peng Huang, Iris Niehues, Robert Schmidt, Steffen Michaelis de Vasconcellos, Rudolf Bratschitsch, Mar García-Hernández, Riccardo Frisenda, Andres Castellanos-Gomez
Thickness determination of MoS2, MoSe2, WS2 and WSe2 on transparent stamps used for deterministic transfer of 2D materials
published pages: 1691-1695, ISSN: 1998-0124, DOI: 10.1007/s12274-019-2424-6
Nano Research 12/7 2019-10-28
2018 Bingchen Deng, Riccardo Frisenda, Cheng Li, Xiaolong Chen, Andres Castellanos-Gomez, Fengnian Xia
Progress on Black Phosphorus Photonics
published pages: 1800365, ISSN: 2195-1071, DOI: 10.1002/adom.201800365
Advanced Optical Materials 6/19 2019-10-28
2019 Patricia Gant, Peng Huang, David Pérez de Lara, Dan Guo, Riccardo Frisenda, Andres Castellanos-Gomez
A strain tunable single-layer MoS2 photodetector
published pages: 8-13, ISSN: 1369-7021, DOI: 10.1016/j.mattod.2019.04.019
Materials Today 27 2019-10-28
2018 Nikos Papadopoulos, Riccardo Frisenda, Robert Biele, Eduardo Flores, Jose R. Ares, Carlos Sánchez, Herre S. J. van der Zant, Isabel J. Ferrer, Roberto D\'Agosta, Andres Castellanos-Gomez
Large birefringence and linear dichroism in TiS 3 nanosheets
published pages: 12424-12429, ISSN: 2040-3364, DOI: 10.1039/c8nr03616k
Nanoscale 10/26 2019-10-28
2019 Yu Kyoung Ryu, Riccardo Frisenda, Andres Castellanos-Gomez
Superlattices based on van der Waals 2D materials
published pages: 11498-11510, ISSN: 1359-7345, DOI: 10.1039/c9cc04919c
Chemical Communications 55/77 2019-10-28
2018 Yue Niu, Riccardo Frisenda, Eduardo Flores, Jose R. Ares, Weicheng Jiao, David Perez de Lara, Carlos Sánchez, Rongguo Wang, Isabel J. Ferrer, Andres Castellanos-Gomez
Polarization-Sensitive and Broadband Photodetection Based on a Mixed-Dimensionality TiS 3 /Si p-n Junction
published pages: 1800351, ISSN: 2195-1071, DOI: 10.1002/adom.201800351
Advanced Optical Materials 6/19 2019-10-28
2019 Nestor Iguiñiz, Riccardo Frisenda, Rudolf Bratschitsch, Andres Castellanos-Gomez
Revisiting the Buckling Metrology Method to Determine the Young\'s Modulus of 2D Materials
published pages: 1807150, ISSN: 0935-9648, DOI: 10.1002/adma.201807150
Advanced Materials 31/10 2019-10-28
2018 Qinghua Zhao, Riccardo Frisenda, Patricia Gant, David Perez de Lara, Carmen Munuera, Mar Garcia-Hernandez, Yue Niu, Tao Wang, Wanqi Jie, Andres Castellanos-Gomez
Toward Air Stability of Thin GaSe Devices: Avoiding Environmental and Laser-Induced Degradation by Encapsulation
published pages: 1805304, ISSN: 1616-301X, DOI: 10.1002/adfm.201805304
Advanced Functional Materials 28/47 2019-10-28
2018 Nan Zhang, Alessandro Surrente, Michał Baranowski, Duncan K. Maude, Patricia Gant, Andres Castellanos-Gomez, Paulina Plochocka
Moiré Intralayer Excitons in a MoSe 2 /MoS 2 Heterostructure
published pages: 7651-7657, ISSN: 1530-6984, DOI: 10.1021/acs.nanolett.8b03266
Nano Letters 18/12 2019-10-28
2019 Qinghua Zhao, Wei Wang, Felix Carrascoso-Plana, Wanqi Jie, Tao Wang, Andres Castellanos-Gomez, Riccardo Frisenda
The role of traps in the photocurrent generation mechanism in thin InSe photodetectors
published pages: , ISSN: 2051-6347, DOI: 10.1039/c9mh01020c
Materials Horizons 2019-10-28
2019 Luis Vaquero-Garzon, Riccardo Frisenda, Andres Castellanos-Gomez
Anisotropic buckling of few-layer black phosphorus
published pages: 12080-12086, ISSN: 2040-3364, DOI: 10.1039/C9NR03009C
Nanoscale 11/25 2019-10-28
2018 Yue Niu, Sergio Gonzalez-Abad, Riccardo Frisenda, Philipp Marauhn, Matthias Drüppel, Patricia Gant, Robert Schmidt, Najme Taghavi, David Barcons, Aday Molina-Mendoza, Steffen de Vasconcellos, Rudolf Bratschitsch, David Perez De Lara, Michael Rohlfing, Andres Castellanos-Gomez
Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS2, MoSe2, WS2 and WSe2
published pages: 725, ISSN: 2079-4991, DOI: 10.3390/nano8090725
Nanomaterials 8/9 2019-10-28
2019 Qinghua Zhao, Riccardo Frisenda, Tao Wang, Andres Castellanos-Gomez
InSe: a two-dimensional semiconductor with superior flexibility
published pages: 9845-9850, ISSN: 2040-3364, DOI: 10.1039/c9nr02172h
Nanoscale 11/20 2019-10-28
2019 Yue Niu, Julia Villalva, Riccardo Frisenda, Gabriel Sanchez-Santolino, Luisa Ruiz-González, Emilio M Pérez, Mar García-Hernández, Enrique Burzurí, Andres Castellanos-Gomez
Mechanical and liquid phase exfoliation of cylindrite: a natural van der Waals superlattice with intrinsic magnetic interactions
published pages: 35023, ISSN: 2053-1583, DOI: 10.1088/2053-1583/ab1a4c
2D Materials 6/3 2019-10-28
2019 Michael Seitz, Patricia Gant, Andres Castellanos-Gomez, Ferry Prins
Long-Term Stabilization of Two-Dimensional Perovskites by Encapsulation with Hexagonal Boron Nitride
published pages: 1120, ISSN: 2079-4991, DOI: 10.3390/nano9081120
Nanomaterials 9/8 2019-10-28
2019 Felix Carrascoso, D Y Lin, Riccardo Frisenda, Andres Castellanos-Gomez
Biaxial strain tuning of interlayer excitons in bilayer MoS2
published pages: , ISSN: 2515-7639, DOI: 10.1088/2515-7639/ab4432
Journal of Physics: Materials 2019-10-28

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