Opendata, web and dolomites

GR-GATE

Scalable graphene-gated transistors

Total Cost €

0

EC-Contrib. €

0

Partnership

0

Views

0

Project "GR-GATE" data sheet

The following table provides information about the project.

Coordinator
"NATIONAL CENTER FOR SCIENTIFIC RESEARCH ""DEMOKRITOS""" 

Organization address
address: END OF PATRIARCHOU GRIGORIOU E AND 27 NEAPOLEOS STREET
city: AGIA PARASKEVI
postcode: 15341
website: www.demokritos.gr

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Greece [EL]
 Total cost 150˙000 €
 EC max contribution 150˙000 € (100%)
 Programme 1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC))
 Code Call ERC-2017-PoC
 Funding Scheme ERC-POC
 Starting year 2018
 Duration (year-month-day) from 2018-03-01   to  2019-08-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    "NATIONAL CENTER FOR SCIENTIFIC RESEARCH ""DEMOKRITOS""" EL (AGIA PARASKEVI) coordinator 150˙000.00

Map

 Project objective

'The GR-GATE project proposes a novel negative quantum capacitance field effect transistor (NQCFET) with steep subthreshold characteristics which enables operation at low power supply voltages (Vdd). The technology can be combined with state of the art Si device architectures such as FDSOI or more mature steep slope switches such as the tunneling field effect transistor (TFET) functioning as technology booster to improve low power /high performance operation characteristics of transistors. The later can have an impact on energy efficient nanoelectronics. NQCFET has competitive advantages against rival emerging steep slope switch technologies and complements rather than competes with mainstream Si devices, therefore showing a high potential for non-disruptive innovation and a prospect for fast and smooth entry to large volume production.

The GR-GATE project will produce prototype transistor arrays at TRL 4 to show that the NQCFET technology is scalable to larger area wafers with acceptable device yield having reduced gate lengths and lower gate dielectric thickness in compliance with scaling trends and technological requirements as adopted by the industry. This will demonstrate that the technology has a commercial value calling for IP protection through an international patent filing. In addition, technology valorisation is planned in order to assess the manufacturability and viability of the NQCFET technology and identify further advanced development steps that need to be taken in order to bring the technology to maturity (TRL 8-9). It is expected that large European technology development laboratories will have a crucial role in validating the technology but also promoting it to their industrial affiliates targeting a licence agreement with key chip manufacturers to enable volume production. '

Are you the coordinator (or a participant) of this project? Plaese send me more information about the "GR-GATE" project.

For instance: the website url (it has not provided by EU-opendata yet), the logo, a more detailed description of the project (in plain text as a rtf file or a word file), some pictures (as picture files, not embedded into any word file), twitter account, linkedin page, etc.

Send me an  email (fabio@fabiodisconzi.com) and I put them in your project's page as son as possible.

Thanks. And then put a link of this page into your project's website.

The information about "GR-GATE" are provided by the European Opendata Portal: CORDIS opendata.

More projects from the same programme (H2020-EU.1.1.)

InsideChromatin (2019)

Towards Realistic Modelling of Nucleosome Organization Inside Functional Chromatin Domains

Read More  

PROGRESS (2019)

The Enemy of the Good: Towards a Theory of Moral Progress

Read More  

SuperH (2019)

Discovery and Characterization of Hydrogen-Based High-Temperature Superconductors

Read More  
lastchecktime (2022-05-20 4:57:55) correctly updated