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Xene Fabrication for a Two-Dimensional Nanotechnology Platform

Total Cost €


EC-Contrib. €






 XFab project word cloud

Explore the words cloud of the XFab project. It provides you a very rough idea of what is the project "XFab" about.

ge    electrical    exist    vertical    single    reported    layers    standards    temperature    xene    named    nanotechnology    secondly    respectively    diodes    integration    semimetals    room    2d    prototypical    atomic    ex    validation    structures    crystal    functionalized    heterostructures    unlike    graphene    si    materials    phosphorene    quality    structure    fast    platforms    semiconductors    encapsulated    crystals    antimonene    environmental    transistors    experimental    denote    effort    albeit    frameworks    situ       nature    sb    appear    incorporating    broad    stable    first    borophene    missing    active    xenes    nonetheless    schemes    characterization    topological    synthesis    degradation    beam    serve    stabilized    silicene    xrms    lack    lattice    sn    dimensional    metals    honeycomb    monoelemental    evidences    electronic    germanene    device    substrates    epitaxy    stanene    effect    stabilization    molecular    insulators    purpose    performances    subsequent    background   

Project "XFab" data sheet

The following table provides information about the project.


Organization address
city: ROMA
postcode: 185

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Italy [IT]
 Total cost 1˙998˙785 €
 EC max contribution 1˙998˙785 € (100%)
 Programme 1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC))
 Code Call ERC-2017-COG
 Funding Scheme ERC-COG
 Starting year 2018
 Duration (year-month-day) from 2018-04-01   to  2023-03-31


Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    CONSIGLIO NAZIONALE DELLE RICERCHE IT (ROMA) coordinator 1˙998˙785.00


 Project objective

Xenes denote two-dimensional (2D) monoelemental (X) crystals beyond graphene with a honeycomb lattice. Unlike graphene, Xenes do not exist in Nature, but they become stable via epitaxy on substrates. So far experimental evidences of Xene epitaxy have been reported for X=Si, Ge, Sn, B, P, and Sb (named silicene, germanene, stanene, borophene, phosphorene, and antimonene, respectively). Xene single layers also serve as a background for the synthesis of new Xene-related materials (XRMs) such as Xene heterostructures and functionalized Xenes. Xenes can appear as metals, semimetals, semiconductors, and topological insulators thus allowing for a broad range of applications in nanotechnology. However only silicene has been integrated into transistors operating at room temperature albeit fast degradation. Nonetheless, a viable Xene-based nanotechnology is currently missing due to the lack of reliable standards for the Xene production and implementation. For this purpose, the proposal aims at developing viable schemes for high-quality crystal growth, environmental stabilization, and device integration of Xenes and XRMs frameworks. At first the effort will be focused on the high-quality synthesis of selected Xenes and XRMs by means of molecular beam epitaxy, and on their stabilization in encapsulated structures enabling subsequent processing into Xene-based device platforms. Validation of the Xene properties, quality, and performances will be carried out by means of advanced in situ and ex situ characterization of the atomic and electronic structure. Secondly, prototypical electronic device (e.g. field effect transistors or vertical diodes) incorporating stabilized Xene frameworks as active elements will be used to assess the Xene electrical behaviour and performances so as to establish a reliable Xene-based nanotechnology.


year authors and title journal last update
List of publications.
2018 Carlo Grazianetti, Stefania De Rosa, Christian Martella, Paolo Targa, Davide Codegoni, Paola Gori, Olivia Pulci, Alessandro Molle, Stefano Lupi
Optical Conductivity of Two-Dimensional Silicon: Evidence of Dirac Electrodynamics
published pages: 7124-7132, ISSN: 1530-6984, DOI: 10.1021/acs.nanolett.8b03169
Nano Letters 18/11 2019-12-16
2019 Carlo Grazianetti, Gabriele Faraone, Christian Martella, Emiliano Bonera, Alessandro Molle
Embedding epitaxial (blue) phosphorene in between device-compatible functional layers
published pages: 18232-18237, ISSN: 2040-3364, DOI: 10.1039/c9nr06037e
Nanoscale 11/39 2019-12-16
2018 Alessandro Molle, Carlo Grazianetti, Li Tao, Deepyanti Taneja, Md. Hasibul Alam, Deji Akinwande
Silicene, silicene derivatives, and their device applications
published pages: 6370-6387, ISSN: 0306-0012, DOI: 10.1039/c8cs00338f
Chemical Society Reviews 47/16 2019-12-16
2019 Carlo Grazianetti, Alessandro Molle
Engineering Epitaxial Silicene on Functional Substrates for Nanotechnology
published pages: 1-8, ISSN: 2639-5274, DOI: 10.34133/2019/8494606
Research 2019 2019-12-16

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