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LEAF-2D SIGNED

Laser EnAbled TransFer of 2D Materials

Total Cost €

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EC-Contrib. €

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Partnership

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Project "LEAF-2D" data sheet

The following table provides information about the project.

Coordinator
NATIONAL TECHNICAL UNIVERSITY OF ATHENS - NTUA 

Organization address
address: HEROON POLYTECHNIOU 9 ZOGRAPHOU CAMPUS
city: ATHINA
postcode: 15780
website: www.ntua.gr

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Greece [EL]
 Project website http://www.leaf2d.eu
 Total cost 2˙851˙030 €
 EC max contribution 2˙851˙030 € (100%)
 Programme 1. H2020-EU.1.2.1. (FET Open)
 Code Call H2020-FETOPEN-1-2016-2017
 Funding Scheme RIA
 Starting year 2018
 Duration (year-month-day) from 2018-11-01   to  2021-10-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    NATIONAL TECHNICAL UNIVERSITY OF ATHENS - NTUA EL (ATHINA) coordinator 634˙625.00
2    BAR ILAN UNIVERSITY IL (RAMAT GAN) participant 719˙250.00
3    UNIVERSITY OF SOUTHAMPTON UK (SOUTHAMPTON) participant 583˙780.00
4    MELLANOX TECHNOLOGIES LTD - MLNX IL (YOKNEAM) participant 497˙500.00
5    GRAPHENEA SEMICONDUCTOR SL ES (DONOSTIA) participant 300˙000.00
6    MARIOS LYMARAKIS KAI SIA EE EL (GERAKAS ATTIKI) participant 115˙875.00
7    GRAPHENEA SA ES (SAN SEBASTIAN GUIPUZCOA) participant 0.00

Map

 Project objective

2D Layered Materials (2D LM) hold enormous promise for enabling new device concepts and novel applications, owing to their planar nature and their exquisite, tuneable properties. Despite the rapid advancement of many aspects of Layered Materials (LM) technology, many emerging applications are hampered by the lack of an efficient, defect-free and controllable technique for the transfer of pixels of LM onto desired substrates. The core concept of this proposal is the development of a novel nano-manufacturing technology based on laser transfer techniques, which will enable the rapid, intact transfer and engineering of 2D stacks and heterostructures for optoelectronic, photonic and organic electronic devices. To achieve this, we will benefit from the unique advantages of the Laser Induced Backward Transfer (LIBT) and Laser Induced Forward Transfer (LIFT) techniques, which among other attributes, offer the capability for intact transfer of any 2D LM with high lateral resolution (micron scale), the transfer of 2D heterostructures and compatibility with a variety of substrates, including Si and flexible substrates. The implementation of the proposed technology will offer a chemical- and defect -free transfer of 2D monolayers with high precision: exquisitely clean Si-2D semiconductor (SC) heterostructures will be demonstrated using LDT and enable the fabrication of Near-IR Si emitters. Single layer and defect – free Graphene pixels will be printed on flexible substrates for highly sensitive ultra-thin sensors. These breakthroughs in the fields of Si emitters and flexible touch sensors will validate the importance of LEAF-2D and facilitate the incorporation of 2D materials in a plethora of emerging technological fields.

 Deliverables

List of deliverables.
Theoretical results on the structural, electronic and optical properties of 2D materials and their dependence on proximal substrates (first run). Documents, reports 2020-02-17 17:21:30
Data Management Plan. Open Research Data Pilot 2020-02-17 17:21:26
Project Web presence (Website and Social Media). Websites, patent fillings, videos etc. 2020-02-17 17:21:36
Dissemination and exploitation plan Documents, reports 2020-02-17 17:21:35

Take a look to the deliverables list in detail:  detailed list of LEAF-2D deliverables.

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The information about "LEAF-2D" are provided by the European Opendata Portal: CORDIS opendata.

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