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Nanolace SIGNED

Mask Based Lithography for Fast, Large Scale Pattern Generation with Nanometer Resolution

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EC-Contrib. €

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Partnership

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Project "Nanolace" data sheet

The following table provides information about the project.

Coordinator
UNIVERSITETET I BERGEN 

Organization address
address: MUSEPLASSEN 1
city: BERGEN
postcode: 5020
website: www.uib.no

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Norway [NO]
 Total cost 3˙356˙511 €
 EC max contribution 3˙356˙511 € (100%)
 Programme 1. H2020-EU.1.2.1. (FET Open)
 Code Call H2020-FETOPEN-2018-2019-2020-01
 Funding Scheme RIA
 Starting year 2020
 Duration (year-month-day) from 2020-01-01   to  2023-12-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    UNIVERSITETET I BERGEN NO (BERGEN) coordinator 537˙686.00
2    IDRYMA TECHNOLOGIAS KAI EREVNAS EL (IRAKLEIO) participant 899˙125.00
3    THE UNIVERSITY OF BIRMINGHAM UK (BIRMINGHAM) participant 481˙413.00
4    MB SCIENTIFIC AB SE (UPPSALA) participant 445˙750.00
5    THE PROVOST, FELLOWS, FOUNDATION SCHOLARS & THE OTHER MEMBERS OF BOARD OF THE COLLEGE OF THE HOLY & UNDIVIDED TRINITY OF QUEEN ELIZABETH NEAR DUBLIN IE (DUBLIN) participant 445˙567.00
6    NORGES TEKNISK-NATURVITENSKAPELIGE UNIVERSITET NTNU NO (TRONDHEIM) participant 393˙953.00
7    IRRESISTIBLE MATERIALS LTD UK (SWANSEA) participant 153˙016.00

Map

 Project objective

Lithography refers to the transfer of a pattern onto a substrate. Lithography techniques are used in the production of a huge range of devices and materials ranging from microelectronics and MEMS devices to optical metamaterials and smart surfaces for medical and other applications. The ultimate goal and limit of lithography is to obtain fast and large scale patterning which enables the controlled positioning of individual molecules or atoms. This requires fast, large scale single nm resolution patterning. At the moment no techniques are available that can do that. Fast positioning of individual molecules or atoms over large areas can path the way for the creation and industrial application of whole new classes of materials and devices including room temperature quantum electronic devices, electronic metamaterials as well as nano filtration membranes and can push the performance of todays microelectronics. The highest resolution (~20 nm), fast, large scale lithography technique today is photolithography where a photon beam is projected through a mask, so that the pattern from the mask is replicated by direct imaging on a substrate coated with resist. Next generation Extreme Ultra Violet (EUV) lithography uses 92 eV photons and is targeted to deliver 8 nm resolution. The EUV ultimate limit, determined by the secondary electron generation blur, is estimated to be around 6 nm, which does not enable single nm resolution patterning. Further reductions in the photolithography resolution of the patterning would increase the photon energy, exacerbating the secondary blur. In Nanolace, a radical breakthrough to reach nm resolution lithography will be demonstrated: single nm resolution patterns will be generated with solid state and optical masks, proposed by partners in the consortium using metastable and Bose Einstein condensated atoms. Nanolace will be the first demonstration of lithography with a Bose Einstein condensate.

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The information about "NANOLACE" are provided by the European Opendata Portal: CORDIS opendata.

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