FerroElectric Multifunctional tunnel junctions for MEmristors and Spintronics


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 Nazionalità Coordinatore France [FR]
 Totale costo 2˙148˙796 €
 EC contributo 2˙148˙796 €
 Programma FP7-IDEAS-ERC
Specific programme: "Ideas" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)
 Code Call ERC-2010-AdG_20100224
 Funding Scheme ERC-AG
 Anno di inizio 2011
 Periodo (anno-mese-giorno) 2011-04-01   -   2016-03-31


# participant  country  role  EC contrib. [€] 

 Organization address address: RUE GEORGES CLEMENCEAU 15
city: ORSAY
postcode: 91405

contact info
Titolo: Mr.
Nome: Nicolas
Cognome: Lecompte
Email: send email
Telefono: 33169155589
Fax: 33169155599

FR (ORSAY) hostInstitution 2˙148˙796.00

 Organization address address: RUE GEORGES CLEMENCEAU 15
city: ORSAY
postcode: 91405

contact info
Titolo: Prof.
Nome: Agnès Yvonne Georgette
Cognome: Barthélémy
Email: send email
Telefono: +33 1 69415848
Fax: +33 1 69415878

FR (ORSAY) hostInstitution 2˙148˙796.00


 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

sources    circuits    ferroelectricity    ferroelectric    tunneling    impact    neuromorphic    ftjs    tunnel    power    charge    obtain    barrier    spintronics    junctions    magnetic    transport    electrodes    spin   

 Obiettivo del progetto (Objective)

'The aim of the project FEMMES is to study the interplay between charge/spin tunneling and ferroelectricity in Ferroelectric Tunnel Junctions (FTJs) composed of two electrodes separated by a ferroelectric tunnel barrier. It will address fundamental issues such as the influence of interfaces and small thicknesses on the ferroelectricity, the dependence of the charge and spin tunneling on the ferroelectric orientation (electroresistance), the impact of the ferroelectricity of the barrier on the magnetism and spin polarisation of the electrodes. I propose to exploit FTJs and the intrinsic low-power of “ferroelectric writing”, to obtain: 1) a low-power electrical control of spin polarized electron sources for spintronics in FTJs with magnetic electrodes. 2) memristive FTJs mimicking the plasticity of synapses for an exploitation in neuromorphic analog circuits. This will be achieved by a synergetic approach combining: - ab initio calculations to determine the most appropriate combination of ferroelectric materials and electrodes and to obtain a complete description of the impact of the ferroelectric character on the transport properties. - the growth of selected heterostructures and extensive characterization of their structural, ferroelectric and magnetic properties. - the patterning of junctions (at the µm and nm scale) and the investigation of their transport and magnetotransport properties. - the evaluation and optimization of the potential of FTJs as electrically tunable spin sources for spintronics and memristors for neuromorphic circuits.'

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