NanoFab2D SIGNED
Novel 2D quantum device concepts enabled by sub-nanometre precision nanofabrication
Total Cost €
0EC-Contrib. €
0Partnership
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Explore the words cloud of the NanoFab2D project. It provides you a very rough idea of what is the project "NanoFab2D" about.
Project "NanoFab2D" data sheet
The following table provides information about the project.
| Coordinator |
ENERGIATUDOMANYI KUTATOKOZPONT
Organization address contact info |
| Coordinator Country | Hungary [HU] |
| Project website | http://www.2dmaterials.hu |
| Total cost | 1˙496˙500 € |
| EC max contribution | 1˙496˙500 € (100%) |
| Programme |
1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC)) |
| Code Call | ERC-2015-STG |
| Funding Scheme | ERC-STG |
| Starting year | 2016 |
| Duration (year-month-day) | from 2016-07-01 to 2021-06-30 |
Partnership
Take a look of project's partnership.
| # | ||||
|---|---|---|---|---|
| 1 | ENERGIATUDOMANYI KUTATOKOZPONT | HU (Budapest) | coordinator | 1˙496˙500.00 |
Map
Project objective
IIn today’s electronics, the information storage and processing are performed by independent technologies. The information-processing is based on semiconductor (silicon) devices, while non-volatile data storage relies on ferromagnetic metals. Integrating these tasks on a single chip and within the same material technology would enable disruptively new device concepts opening the way towards ultra-high speed electronic circuits. Due to the unique versatility of its electronic and magnetic properties, graphene has a strong potential as a platform for the implementation of such devices. By engineering their structure at the atomic level, graphene nanostructures of metallic, semiconducting, as well as magnetic properties can be realized. Here we propose that the unmatched precision and full edge orientation control of our STM-based nanofabrication technique enables the reliable implementation of such graphene nanostructures, as well as their complex, functional networks. In particular, we propose to experimentally demonstrate the feasibility of (1) semiconductor graphene nanostructures based on the quantum confinement effect, (2) spin-based devices from graphene nanostructures with magnetic edges, as well as (3) novel operation principles based on the interplay of the electronic and spin-degrees of freedom. We propose to demonstrate the electrical control of magnetism in graphene nanostructures, as well as a novel switching mechanism for graphene field effect transistors induced by the transition between two magnetic edge configurations. Exploiting such novel operation mechanisms in graphene nanostructure engineered at the atomic scale is expected to lay the foundations of disruptively new device concepts combining electronic and spin-based mechanisms that can overcome some of the fundamental limitations of today’s electronics.
Publications
| year | authors and title | journal | last update |
|---|---|---|---|
| 2017 |
Péter Vancsó, Imre Hagymási, Levente Tapasztó A magnetic phase-transition graphene transistor with tunable spin polarization published pages: 24008, ISSN: 2053-1583, DOI: 10.1088/2053-1583/aa5f2d |
2D Materials 4/2 | 2020-01-29 |
| 2017 |
Péter Nemes-Incze, Gergő Kukucska, János Koltai, Jenő Kürti, Chanyong Hwang, Levente Tapasztó, László P. Biró Preparing local strain patterns in graphene by atomic force microscope based indentation published pages: , ISSN: 2045-2322, DOI: 10.1038/s41598-017-03332-5 |
Scientific Reports 7/1 | 2020-01-29 |
| 2019 |
Orsolya Tapasztó, Viktor Puchy, Zsolt E. Horváth, Zsolt Fogarassy, Eszter Bódis, Zoltán Károly, Katalin Balázsi, Jan Dusza, Levente Tapasztó The effect of graphene nanoplatelet thickness on the fracture toughness of Si3N4 composites published pages: 6858-6862, ISSN: 0272-8842, DOI: 10.1016/j.ceramint.2018.12.180 |
Ceramics International 45/6 | 2020-01-29 |
| 2018 |
János Pető, Tamás Ollár, Péter Vancsó, Zakhar I. Popov, Gábor Zsolt Magda, Gergely Dobrik, Chanyong Hwang, Pavel B. Sorokin, Levente Tapasztó Spontaneous doping of the basal plane of MoS2 single layers through oxygen substitution under ambient conditions published pages: 1246-1251, ISSN: 1755-4330, DOI: 10.1038/s41557-018-0136-2 |
Nature Chemistry 10/12 | 2020-01-29 |
| 2019 |
Péter Vancsó, Zakhar I. Popov, János Pető, Tamás Ollár, Gergely Dobrik, József S. Pap, Chanyong Hwang, Pavel B. Sorokin, Levente Tapasztó Transition Metal Chalcogenide Single Layers as an Active Platform for Single-Atom Catalysis published pages: 1947-1953, ISSN: 2380-8195, DOI: 10.1021/acsenergylett.9b01097 |
ACS Energy Letters 4/8 | 2020-01-29 |
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