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Novel 2D quantum device concepts enabled by sub-nanometre precision nanofabrication

Total Cost €


EC-Contrib. €






Project "NanoFab2D" data sheet

The following table provides information about the project.


Organization address
city: Budapest
postcode: 1121

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Hungary [HU]
 Project website
 Total cost 1˙496˙500 €
 EC max contribution 1˙496˙500 € (100%)
 Programme 1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC))
 Code Call ERC-2015-STG
 Funding Scheme ERC-STG
 Starting year 2016
 Duration (year-month-day) from 2016-07-01   to  2021-06-30


Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    ENERGIATUDOMANYI KUTATOKOZPONT HU (Budapest) coordinator 1˙496˙500.00


 Project objective

IIn today’s electronics, the information storage and processing are performed by independent technologies. The information-processing is based on semiconductor (silicon) devices, while non-volatile data storage relies on ferromagnetic metals. Integrating these tasks on a single chip and within the same material technology would enable disruptively new device concepts opening the way towards ultra-high speed electronic circuits. Due to the unique versatility of its electronic and magnetic properties, graphene has a strong potential as a platform for the implementation of such devices. By engineering their structure at the atomic level, graphene nanostructures of metallic, semiconducting, as well as magnetic properties can be realized. Here we propose that the unmatched precision and full edge orientation control of our STM-based nanofabrication technique enables the reliable implementation of such graphene nanostructures, as well as their complex, functional networks. In particular, we propose to experimentally demonstrate the feasibility of (1) semiconductor graphene nanostructures based on the quantum confinement effect, (2) spin-based devices from graphene nanostructures with magnetic edges, as well as (3) novel operation principles based on the interplay of the electronic and spin-degrees of freedom. We propose to demonstrate the electrical control of magnetism in graphene nanostructures, as well as a novel switching mechanism for graphene field effect transistors induced by the transition between two magnetic edge configurations. Exploiting such novel operation mechanisms in graphene nanostructure engineered at the atomic scale is expected to lay the foundations of disruptively new device concepts combining electronic and spin-based mechanisms that can overcome some of the fundamental limitations of today’s electronics.


year authors and title journal last update
List of publications.
2017 Péter Vancsó, Imre Hagymási, Levente Tapasztó
A magnetic phase-transition graphene transistor with tunable spin polarization
published pages: 24008, ISSN: 2053-1583, DOI: 10.1088/2053-1583/aa5f2d
2D Materials 4/2 2020-01-29
2017 Péter Nemes-Incze, Gergő Kukucska, János Koltai, Jenő Kürti, Chanyong Hwang, Levente Tapasztó, László P. Biró
Preparing local strain patterns in graphene by atomic force microscope based indentation
published pages: , ISSN: 2045-2322, DOI: 10.1038/s41598-017-03332-5
Scientific Reports 7/1 2020-01-29
2019 Orsolya Tapasztó, Viktor Puchy, Zsolt E. Horváth, Zsolt Fogarassy, Eszter Bódis, Zoltán Károly, Katalin Balázsi, Jan Dusza, Levente Tapasztó
The effect of graphene nanoplatelet thickness on the fracture toughness of Si3N4 composites
published pages: 6858-6862, ISSN: 0272-8842, DOI: 10.1016/j.ceramint.2018.12.180
Ceramics International 45/6 2020-01-29
2018 János Pető, Tamás Ollár, Péter Vancsó, Zakhar I. Popov, Gábor Zsolt Magda, Gergely Dobrik, Chanyong Hwang, Pavel B. Sorokin, Levente Tapasztó
Spontaneous doping of the basal plane of MoS2 single layers through oxygen substitution under ambient conditions
published pages: 1246-1251, ISSN: 1755-4330, DOI: 10.1038/s41557-018-0136-2
Nature Chemistry 10/12 2020-01-29
2019 Péter Vancsó, Zakhar I. Popov, János Pető, Tamás Ollár, Gergely Dobrik, József S. Pap, Chanyong Hwang, Pavel B. Sorokin, Levente Tapasztó
Transition Metal Chalcogenide Single Layers as an Active Platform for Single-Atom Catalysis
published pages: 1947-1953, ISSN: 2380-8195, DOI: 10.1021/acsenergylett.9b01097
ACS Energy Letters 4/8 2020-01-29

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