Explore the words cloud of the InRel-NPower project. It provides you a very rough idea of what is the project "InRel-NPower" about.
The following table provides information about the project.
UNIVERSITA DEGLI STUDI DI PADOVA
|Coordinator Country||Italy [IT]|
|Total cost||7˙691˙466 €|
|EC max contribution||7˙190˙000 € (93%)|
1. H2020-EU.2.1.3. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Advanced materials)
|Duration (year-month-day)||from 2017-01-01 to 2020-06-30|
Take a look of project's partnership.
|1||UNIVERSITA DEGLI STUDI DI PADOVA||IT (PADOVA)||coordinator||650˙000.00|
|2||ON SEMICONDUCTOR BELGIUM BVBA||BE (OUDENAARDE)||participant||1˙825˙271.00|
|3||ROBERT BOSCH GMBH||DE (GERLINGEN-SCHILLERHOEHE)||participant||950˙000.00|
|4||SIEMENS AKTIENGESELLSCHAFT||DE (MUNCHEN)||participant||750˙000.00|
|5||EPIGAN NV||BE (Hasselt)||participant||744˙980.00|
|6||CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS||FR (PARIS)||participant||636˙083.00|
|7||FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.||DE (MUNCHEN)||participant||626˙165.00|
|8||UNIVERSITEIT GENT||BE (GENT)||participant||505˙000.00|
|9||CONSTRUCTIONS ELECTRONIQUES + TELECOMMUNICATIONS||BE (LIEGE)||participant||502˙500.00|
|10||NATIONAL UNIVERSITY CORPORATION KYUSHU UNIVERSITY||JP (FUKUOKA)||participant||0.00|
|11||NATIONAL UNIVERSITY CORPORATION MIE UNIVERSITY||JP (TSU MIE)||participant||0.00|
The main objective of this proposal is to develop reliable GaN-based power devices and systems for high and medium power electronics targeting industrial and automotive applications and bringing the GaN power devices another step towards the wide usability in the energy saving environment to further tap the full potential which this new material brings along. This proposal addresses two subjects, one of which is medium power (till 10kW) GaN-on-Si based lateral HEMT structures (Normally OFF devices), with special focus on high reliability, which is still a major blocking item to allow wide-spread market adoption. Hence, the impact of the GaN material quality, in combination with the device layout in view of long-term reliability will be addressed. The project aims an in-depth reliability study and qualification strategy development whereby the study of the impact of dislocations and other structural disturbances inside the materials on the long term device reliability will be specifically addressed. In addition, this proposal aims to demonstrate new device concepts with increased robustness and reliability, which will be realized, evaluated and tested thoroughly. This will demonstrate how it is possible to overcome the known limitations of the GaN on Silicon technology, like e.g. the vertical leakage, trapping phenomena and/or breakdown of lateral HEMTs and the p-GaN gate related reliability issues. The current proposal also contains the development of novel device architecture (dual channel, substrate removal, e-mode), as well as the exploration of new material systems (Aluminum Nitride (Al-based) devices) which can also largely contribute to overcome drawbacks of the GaN on Si technology. The applicability of the novel GaN-on-Si concepts in form of an industrial inverter will be demonstrated finally, with the development of an innovative low inductance packaging system for power devices, making full benefits of the fast switching capability of GaN-based power devices.
|Web site||Websites, patent fillings, videos etc.||2019-10-03 19:25:43|
Take a look to the deliverables list in detail: detailed list of InRel-NPower deliverables.
|year||authors and title||journal||last update|
Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, Hiroshi Amano
DFT modeling of carbon incorporation in GaN(0001) and GaN(0001Â¯) metalorganic vapor phase epitaxy
published pages: 141602, ISSN: 0003-6951, DOI: 10.1063/1.4991608
|Applied Physics Letters 111/14||2019-10-03|
Ezgi Dogmus, Malek Zegaoui, Farid Medjdoub
GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap
published pages: 34102, ISSN: 1882-0778, DOI: 10.7567/apex.11.034102
|Applied Physics Express 11/3||2019-10-03|
Matteo Meneghini, Alaleh Tajalli, Peter Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso
Trapping phenomena and degradation mechanisms in GaN-based power HEMTs
published pages: 118-126, ISSN: 1369-8001, DOI: 10.1016/j.mssp.2017.10.009
|Materials Science in Semiconductor Processing 78||2019-10-03|
Akira Kusaba, Guanchen Li, Michael von Spakovsky, Yoshihiro Kangawa, Koichi Kakimoto
Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics
published pages: 948, ISSN: 1996-1944, DOI: 10.3390/ma10080948
I. Rossetto, M. Meneghini, A. Tajalli, S. Dalcanale, C. De Santi, P. Moens, A. Banerjee, E. Zanoni, G. Meneghesso
Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs
published pages: 3734-3739, ISSN: 0018-9383, DOI: 10.1109/TED.2017.2728785
|IEEE Transactions on Electron Devices 64/9||2019-10-03|
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