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InRel-NPower SIGNED

Innovative Reliable Nitride based Power Devices and Applications

Total Cost €

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EC-Contrib. €

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Partnership

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Project "InRel-NPower" data sheet

The following table provides information about the project.

Coordinator
UNIVERSITA DEGLI STUDI DI PADOVA 

Organization address
address: VIA 8 FEBBRAIO 2
city: PADOVA
postcode: 35122
website: www.unipd.it

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Italy [IT]
 Project website http://www.inrel-npower.eu/
 Total cost 7˙691˙466 €
 EC max contribution 7˙190˙000 € (93%)
 Programme 1. H2020-EU.2.1.3. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Advanced materials)
 Code Call H2020-NMBP-2016-two-stage
 Funding Scheme RIA
 Starting year 2017
 Duration (year-month-day) from 2017-01-01   to  2020-06-30

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    UNIVERSITA DEGLI STUDI DI PADOVA IT (PADOVA) coordinator 650˙000.00
2    ON SEMICONDUCTOR BELGIUM BVBA BE (OUDENAARDE) participant 1˙825˙271.00
3    ROBERT BOSCH GMBH DE (GERLINGEN-SCHILLERHOEHE) participant 950˙000.00
4    SIEMENS AKTIENGESELLSCHAFT DE (MUNCHEN) participant 750˙000.00
5    EPIGAN NV BE (Hasselt) participant 744˙980.00
6    CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS FR (PARIS) participant 636˙083.00
7    FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V. DE (MUNCHEN) participant 626˙165.00
8    UNIVERSITEIT GENT BE (GENT) participant 505˙000.00
9    CONSTRUCTIONS ELECTRONIQUES + TELECOMMUNICATIONS BE (LIEGE) participant 502˙500.00
10    NATIONAL UNIVERSITY CORPORATION KYUSHU UNIVERSITY JP (FUKUOKA) participant 0.00
11    NATIONAL UNIVERSITY CORPORATION MIE UNIVERSITY JP (TSU MIE) participant 0.00

Map

 Project objective

The main objective of this proposal is to develop reliable GaN-based power devices and systems for high and medium power electronics targeting industrial and automotive applications and bringing the GaN power devices another step towards the wide usability in the energy saving environment to further tap the full potential which this new material brings along. This proposal addresses two subjects, one of which is medium power (till 10kW) GaN-on-Si based lateral HEMT structures (Normally OFF devices), with special focus on high reliability, which is still a major blocking item to allow wide-spread market adoption. Hence, the impact of the GaN material quality, in combination with the device layout in view of long-term reliability will be addressed. The project aims an in-depth reliability study and qualification strategy development whereby the study of the impact of dislocations and other structural disturbances inside the materials on the long term device reliability will be specifically addressed. In addition, this proposal aims to demonstrate new device concepts with increased robustness and reliability, which will be realized, evaluated and tested thoroughly. This will demonstrate how it is possible to overcome the known limitations of the GaN on Silicon technology, like e.g. the vertical leakage, trapping phenomena and/or breakdown of lateral HEMTs and the p-GaN gate related reliability issues. The current proposal also contains the development of novel device architecture (dual channel, substrate removal, e-mode), as well as the exploration of new material systems (Aluminum Nitride (Al-based) devices) which can also largely contribute to overcome drawbacks of the GaN on Si technology. The applicability of the novel GaN-on-Si concepts in form of an industrial inverter will be demonstrated finally, with the development of an innovative low inductance packaging system for power devices, making full benefits of the fast switching capability of GaN-based power devices.

 Deliverables

List of deliverables.
Web site Websites, patent fillings, videos etc. 2019-10-03 19:25:43

Take a look to the deliverables list in detail:  detailed list of InRel-NPower deliverables.

 Publications

year authors and title journal last update
List of publications.
2017 Pawel Kempisty, Yoshihiro Kangawa, Akira Kusaba, Kenji Shiraishi, Stanislaw Krukowski, Michal Bockowski, Koichi Kakimoto, Hiroshi Amano
DFT modeling of carbon incorporation in GaN(0001) and GaN(0001¯) metalorganic vapor phase epitaxy
published pages: 141602, ISSN: 0003-6951, DOI: 10.1063/1.4991608
Applied Physics Letters 111/14 2019-10-03
2018 Ezgi Dogmus, Malek Zegaoui, Farid Medjdoub
GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap
published pages: 34102, ISSN: 1882-0778, DOI: 10.7567/apex.11.034102
Applied Physics Express 11/3 2019-10-03
2018 Matteo Meneghini, Alaleh Tajalli, Peter Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso
Trapping phenomena and degradation mechanisms in GaN-based power HEMTs
published pages: 118-126, ISSN: 1369-8001, DOI: 10.1016/j.mssp.2017.10.009
Materials Science in Semiconductor Processing 78 2019-10-03
2017 Akira Kusaba, Guanchen Li, Michael von Spakovsky, Yoshihiro Kangawa, Koichi Kakimoto
Modeling the Non-Equilibrium Process of the Chemical Adsorption of Ammonia on GaN(0001) Reconstructed Surfaces Based on Steepest-Entropy-Ascent Quantum Thermodynamics
published pages: 948, ISSN: 1996-1944, DOI: 10.3390/ma10080948
Materials 10/8 2019-10-03
2017 I. Rossetto, M. Meneghini, A. Tajalli, S. Dalcanale, C. De Santi, P. Moens, A. Banerjee, E. Zanoni, G. Meneghesso
Evidence of Hot-Electron Effects During Hard Switching of AlGaN/GaN HEMTs
published pages: 3734-3739, ISSN: 0018-9383, DOI: 10.1109/TED.2017.2728785
IEEE Transactions on Electron Devices 64/9 2019-10-03

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