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Extreme-Light Seeded Control of Ultrafast Laser Material Modifications

Total Cost €


EC-Contrib. €






 EXSEED project word cloud

Explore the words cloud of the EXSEED project. It provides you a very rough idea of what is the project "EXSEED" about.

nano    extract    prototyping    hold    laser    space    avalanched    attosecond    breakdown    promises    3d    inside    seeded    shorter    extend    benefits    free    spatial    mid    ideas    attractive    ray    photonics    interactions    parts    resolutions    context    injected    carriers    tight    degree    door    generation    lasers    material    materials    ionization    domain    basis    compact    femtosecond    infrared    high    first    microdevices    create    unexploited    power    demonstrations    efficiencies    fabrication    modest    technologies    conversion    optical    deep    seed    interaction    synchronized    frequencies    radiations    extreme    semiconductors    energy    wavelengths    exceed    radiation    broadband    ultraviolet    time    inaccessible    micro    nonlinear    diagnostics    physics    dimensions    highest    few    rainbow    limits    light    peak    nanometer    tailor    occurrence    intrinsic    pulses    precision    types    investigations    terahertz    silicon    manipulations    cycle    ultrafast    ultrashort    perfectly    rapid   

Project "EXSEED" data sheet

The following table provides information about the project.


Organization address
address: RUE MICHEL ANGE 3
city: PARIS
postcode: 75794

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country France [FR]
 Total cost 1˙833˙406 €
 EC max contribution 1˙833˙406 € (100%)
 Programme 1. H2020-EU.1.1. (EXCELLENT SCIENCE - European Research Council (ERC))
 Code Call ERC-2016-COG
 Funding Scheme ERC-COG
 Starting year 2017
 Duration (year-month-day) from 2017-05-01   to  2022-04-30


Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 


 Project objective

High-peak power compact femtosecond lasers allow strong-field interactions that are the basis for high-precision laser micro-fabrication. They also create extreme conditions within the matter, leading to the generation of rainbow light used to produce even shorter pulses and new frequencies that can extend from the X-ray to the TeraHertz domain. However, due to the low conversion efficiencies, these attractive light pulses remain unexploited in the context of laser nano-/micro-fabrication. The main objective of this project is to exceed the intrinsic limits of ultrafast laser material processing by developing novel seeded-control technologies with extreme light pulses. In the proposed concept, seed free carriers are injected into materials from extreme light and then avalanched with perfectly synchronized infrared pulses to extract all potential benefits from modest energy new types of radiation. The project includes the study of interactions seeded with deep-ultraviolet, few-optical-cycle and mid-infrared ultrashort pulses. The expected nonlinear processes with these radiations open new and exciting opportunities to tailor material properties with nanometer-scale spatial resolutions and in the three dimensions (3D) for materials inside which the occurrence of breakdown is, today, inaccessible (e.g. semiconductors). This will lead to the first demonstrations of rapid 3D prototyping by laser of silicon photonics microdevices. A long term objective is to open the door to the use of the most extreme ultrashort laser-induced radiations, including extreme-ultraviolet attosecond pulses that hold promises to reach the highest degree of control in the time and space of the interactions. These and other ideas require investigations on ionization physics by ultrashort pulses at extreme wavelengths. They also require tight control of the ultrafast pulses, broadband manipulations and novel interaction diagnostics technologies that will be developed as parts of the project.


year authors and title journal last update
List of publications.
2018 M. Chambonneau, D. Richter, S. Nolte, D. Grojo
Inscribing diffraction gratings in bulk silicon with nanosecond laser pulses
published pages: 6069, ISSN: 0146-9592, DOI: 10.1364/OL.43.006069
Optics Letters 43/24 2019-11-22
2019 M. Chambonneau, L. Lavoute, D. Gaponov, V.Y. Fedorov, A. Hideur, S. Février, S. Tzortzakis, O. Utéza, D. Grojo
Competing Nonlinear Delocalization of Light for Laser Inscription Inside Silicon with a 2- µ m Picosecond Laser
published pages: , ISSN: 2331-7019, DOI: 10.1103/PhysRevApplied.12.024009
Physical Review Applied 12/2 2019-11-20
2019 M. Chambonneau, X. Wang, X. Yu, Q. Li, D. Chaudanson, S. Lei, D. Grojo
Positive- and negative-tone structuring of crystalline silicon by laser-assisted chemical etching
published pages: 1619, ISSN: 0146-9592, DOI: 10.1364/OL.44.001619
Optics Letters 44/7 2019-11-20
2017 Margaux Chanal, Vladimir Yu. Fedorov, Maxime Chambonneau, Raphaël Clady, Stelios Tzortzakis, David Grojo
Crossing the threshold of ultrafast laser writing in bulk silicon
published pages: , ISSN: 2041-1723, DOI: 10.1038/s41467-017-00907-8
Nature Communications 8/1 2019-05-03
2018 H. Kämmer, G. Matthäus, S. Nolte, M. Chanal, O. Utéza, D. Grojo
In-volume structuring of silicon using picosecond laser pulses
published pages: , ISSN: 0947-8396, DOI: 10.1007/s00339-018-1715-1
Applied Physics A 124/4 2019-05-03

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