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The first technology enabling large-scale gallium nitride industrialisation for mainstream power electronics and RF applications

Total Cost €


EC-Contrib. €






Project "eleGaNt" data sheet

The following table provides information about the project.


Organization address
city: HJARUP
postcode: 245 62
website: n.a.

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Sweden [SE]
 Total cost 2˙920˙673 €
 EC max contribution 2˙044˙471 € (70%)
 Programme 1. H2020-EU.3. (PRIORITY 'Societal challenges)
2. H2020-EU.2.3. (INDUSTRIAL LEADERSHIP - Innovation In SMEs)
3. H2020-EU.2.1. (INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies)
 Code Call H2020-SMEInst-2018-2020-2
 Funding Scheme SME-2
 Starting year 2019
 Duration (year-month-day) from 2019-10-01   to  2021-09-30


Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    HEXAGEM AB SE (HJARUP) coordinator 2˙044˙471.00


 Project objective

As the world becomes digitalized, the need for more energy efficient, faster and better performing Electronic Components and Systems (ECS) becomes paramount. These ECS are fully dependent on the semiconductor materials within, currently over 90% silicon (Si)-based. Pure Si technology can no longer cater to the needs placed upon ECS for power electronics and RF applications and thus new semiconductor technologies based on gallium nitride (GaN) are being explored. GaN material properties make it the primary choice for future generations of energy-efficient, high performance power electronics devices, necessary to modernize the energy grid and allow for sustainable energy production and use. However, bulk GaN is prohibitively expensive and thus inaccessible to mainstream applications. The main approach to making the technology commercially viable, reducing its cost significantly, is growing GaN layers on other materials, such as Si. Today, this poses a major technical barrier: existing methods result in high defect densities in the GaN layers, offering a fraction of the efficiency of bulk GaN and therefore poor ECS performance. Switching to GaN-on-Si today thus offers very limited advantages. To harness the full potential of GaN in a commercially viable way, we, at Hexagem, have developed EleGaNt, a cutting-edge new method of growing GaN semiconductor layers of unprecedented quality on any substrate. EleGaNt is the first to deliver capabilities on par with bulk GaN at the cost of current market-available underperforming GaN-on-Si. Our patented EleGaNt growth method introduces a new era of semiconductor wafer tech for an energy efficient power and RF electronics market and has the potential to become the new silicon in the multi-billion power electronics industry, whilst also offering a route towards expanding the TAM for GaN tech. We will license our tech to ECS manufacturers for integration into their fabs, whilst we remain a cutting-edge tech development company.

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The information about "ELEGANT" are provided by the European Opendata Portal: CORDIS opendata.

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