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TRAPS-2D SIGNED

Understanding The Role of the defects to Accomplish high Performance and Stable Two Dimensional Devices

Total Cost €

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EC-Contrib. €

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Partnership

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Project "TRAPS-2D" data sheet

The following table provides information about the project.

Coordinator
UNIVERSIDAD DE GRANADA 

Organization address
address: CUESTA DEL HOSPICIO SN
city: GRANADA
postcode: 18071
website: www.ugr.es

contact info
title: n.a.
name: n.a.
surname: n.a.
function: n.a.
email: n.a.
telephone: n.a.
fax: n.a.

 Coordinator Country Spain [ES]
 Total cost 165˙666 €
 EC max contribution 165˙666 € (100%)
 Programme 1. H2020-EU.1.3.2. (Nurturing excellence by means of cross-border and cross-sector mobility)
 Code Call H2020-MSCA-IF-2019
 Funding Scheme MSCA-IF-GF
 Starting year 2020
 Duration (year-month-day) from 2020-11-01   to  2022-12-31

 Partnership

Take a look of project's partnership.

# participants  country  role  EC contrib. [€] 
1    UNIVERSIDAD DE GRANADA ES (GRANADA) coordinator 165˙666.00
2    NATIONAL CHIAO TUNG UNIVERSITY TW (HSINCHU) partner 0.00

Map

 Project objective

Dr. Marquez proposes a new approach to improve the performance of 2D materials: the defect-engineering. This approach aims to investigate the critical issue of defects implication on the 2D semiconductors operation to solve the low performance and to accomplish a future CMOS co-integration. Electrically activated interfaces, surface and oxide states have demonstrated not only to reduce the device performance but also making the device to behave in a determine operation. Surface defect have shown metal workfunction pinning and therefore formation of Schottky barriers at the contact-semiconductor interface. In addition, depending on the energy level these defect, they can contribute like donor or acceptor dopant or like generation-recombination (trap) centers. In this regard, the fabricated devices would operate differently, presenting n-type, ambipolar or p-type behavior and accumulation or inversion operation modes. Fast operating, normally-on or normally-of devices can be addressed controlling the defect implications. The understanding and control of these defect states and impurities in 2D semiconductor systems is an essential area of research, and the first step is to develop the metrology tools to accurately quantify defect densities and distributions gaining further insight into the possible origin of the defects states. “TRAPS-2D” is a proposal to systematical study of defect (trap) states implications on 2D materials. Its novelty resides in the control of these defects to force the fabricated devices to operate in a specific mode and therefore control their performance. Additionally, the proposal holds an important technological transfer aspect considering the co-integration of these 2D materials in the standard CMOS processes to open the doors to ultimate commercial electronic applications.

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The information about "TRAPS-2D" are provided by the European Opendata Portal: CORDIS opendata.

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