UNIPACK

Universal Failsafe IGBT Package for robust power transmission

 Coordinatore APPLIED MATERIALS TECHNOLOGY LIMITED 

 Organization address address: FARRIER ROAD LYDON BUSINESS PARK Units 6-7
city: LINCOLN
postcode: LN6 3RU

contact info
Titolo: Mr.
Nome: Iain
Cognome: Glass
Email: send email
Telefono: +44 1522500050

 Nazionalità Coordinatore United Kingdom [UK]
 Totale costo 1˙499˙786 €
 EC contributo 1˙087˙003 €
 Programma FP7-SME
Specific Programme "Capacities": Research for the benefit of SMEs
 Code Call FP7-SME-2011
 Funding Scheme BSG-SME
 Anno di inizio 2011
 Periodo (anno-mese-giorno) 2011-12-01   -   2013-11-30

 Partecipanti

# participant  country  role  EC contrib. [€] 
1    APPLIED MATERIALS TECHNOLOGY LIMITED

 Organization address address: FARRIER ROAD LYDON BUSINESS PARK Units 6-7
city: LINCOLN
postcode: LN6 3RU

contact info
Titolo: Mr.
Nome: Iain
Cognome: Glass
Email: send email
Telefono: +44 1522500050

UK (LINCOLN) coordinator 476˙274.25
2    NIMESIS TECHNOLOGY

 Organization address address: RUE DES ARTISANS - FRONTIGNY 4
city: MECLEUVES
postcode: 57245

contact info
Titolo: Mr.
Nome: Alain
Cognome: Hautcoeur
Email: send email
Telefono: +33 387742687
Fax: +33 3 87 35 62 10

FR (MECLEUVES) participant 308˙676.70
3    DYNEX SEMICONDUCTOR LIMITED

 Organization address address: DODDINGTON ROAD
city: LINCOLN
postcode: LN6 3LF

contact info
Titolo: Mr.
Nome: Philip
Cognome: Arnold
Email: send email
Telefono: +44 1522 502908
Fax: +44 1522 500020

UK (LINCOLN) participant 137˙576.00
4    H V WOODING LIMITED

 Organization address address: "RANGE ROAD INDUSTRIAL ESTATE, RANGE ROAD"
city: HYTHE
postcode: CT21 6HG

contact info
Titolo: Mr.
Nome: Paul
Cognome: Allen
Email: send email
Telefono: +44 1303264471

UK (HYTHE) participant 84˙749.75
5    MICROPLAST AS

 Organization address address: WESSELS VEG 2
city: STJORDAL
postcode: 7500

contact info
Titolo: Ms.
Nome: Gunnhild
Cognome: Granmo
Email: send email
Telefono: +47 74 83 98 05
Fax: +47 74 83 98 01

NO (STJORDAL) participant 79˙726.75
6    FUNDACION TECNALIA RESEARCH & INNOVATION

 Organization address address: PARQUE TECNOLOGICO DE MIRAMON PASEO MIKELETEGI 2
city: DONOSTIA-SAN SEBASTIAN
postcode: 20009

contact info
Titolo: Ms.
Nome: Cristina
Cognome: Jimenez
Email: send email
Telefono: +34 946 430 850
Fax: +34 946 460 900

ES (DONOSTIA-SAN SEBASTIAN) participant 0.00
7    NOVAMINA CENTAR INOVATIVNIH TEHNOLOGIJA DOO

 Organization address address: JACKOVINSLI KLANEC 17
city: Zagreb
postcode: 10000

contact info
Titolo: Ms.
Nome: Jasmina
Cognome: Petrinovic
Email: send email
Telefono: +385 1 6504 391
Fax: +385 1 6504 408

HR (Zagreb) participant 0.00
8    THE UK MATERIALS TECHNOLOGY RESEARCH INSTITUTE LIMITED

 Organization address address: MIDDLE ASTON HOUSE
city: MIDDLE ASTON OXFORDSHIRE
postcode: OX25 5PT

contact info
Titolo: Mr.
Nome: Stuart
Cognome: Martin
Email: send email
Telefono: +4 1664501452

UK (MIDDLE ASTON OXFORDSHIRE) participant 0.00

Mappa

Leaflet | Map data © OpenStreetMap contributors, CC-BY-SA, Imagery © Mapbox

 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

loss    module    performance    modules    hvdc    converters    gate    vsc    market    source    transmission    trade    igbt    voltage    power    manufacturing   

 Obiettivo del progetto (Objective)

'Through a mixture of applied research and development, the Uni-Pack project will deliver technologies to reduce the manufacturing costs and improve the performance of plastic packaged IGBT (Insulated gate bipolar transistor) modules, in particular those for use in Voltage Source Converters (VSC) for High Voltage Direct Current (HVDC) power transmission. VSC technology enables efficient access to renewable energy sources and economic connection to the electric utilities grid. Trade studies have identified target IGBT module performance parameters for the HVDC market sector and the need to address the influence of gate drive strategies on converter cell/ module performance. Tailoring of IGBT structures for on-state/ switching loss trade-off across each market sector will be demonstrated and applied to develop 4.5KV enhanced DMOS and /or trench IGBT die exhibiting optimum performance for HVDC transmission. Applied research into a high thermal performance low profile package, designed for low inductance and having fully bonded interconnects will deliver step improvements in performance / reliability and reduced manufacturing cost. An important characteristic of the package will be its capability to fail to short circuit, a feature which is highly beneficial in reducing the system costs. A VSC system is currently in the design stage using standard IGBT modules and this will be used as a benchmark to demonstrate and quantify the degree of success.'

Introduzione (Teaser)

Failing stacked switches in voltage source converters (VSCs) can lead to loss of power, causing disruption to processes. New technology provides an innovative route to avoid power losses in the plurality of power transmission and distribution applications.

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