GANOXSI
Planar ultraviolet radiation detectors based on GaN grown on silicon substrate with novel double oxide buffer layer
| Coordinatore | IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK
Organization address
address: IM TECHNOLOGIEPARK 25 contact info |
| Nazionalità Coordinatore | Germany [DE] |
| Totale costo | 104˙619 € |
| EC contributo | 104˙619 € |
| Programma | FP7-PEOPLE
Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013) |
| Code Call | FP7-PEOPLE-2011-IEF |
| Funding Scheme | MC-IEF |
| Anno di inizio | 2012 |
| Periodo (anno-mese-giorno) | 2012-08-06 - 2013-11-05 |
Partecipanti
| # | ||||
|---|---|---|---|---|
| 1 |
IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK
Organization address
address: IM TECHNOLOGIEPARK 25 contact info |
DE (FRANKFURT (ODER)) | coordinator | 104˙619.00 |
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Obiettivo del progetto (Objective)
'This proposal between the researcher dr Adam Szyszka, the Polish fellow, and dr Thomas Schroeder, the scientist in charge of the German host IHP institute in Frankfurt (Oder) concern on investigation and fabrication of gallium nitride planar UV radiation detectors grown on silicon substrate with use of novel double oxide buffer layer. Gallium nitride and its ternary alloys with aluminium and indium have been recognized as a very important technological material system for fabricating optoelectronic, high frequency and high power devices. Because of the lack of large size GaN substrate different materials are used including silicon which advantages are low cost and large wafer size which allow mass production of devices. Many technological and research problems have to be solved to successful integration of gallium nitride on silicon. In IHP novel approach of application double oxide layer is developing. Objectives of the project include: obtaining the quality of GaN layer on Si substrate with application of oxide layers which allow for optoelectronic device fabrication, investigation of the influence of layer growth parameters properties of the layer, design and fabrication of the prototypes of the detectors, measurements of the device parameters dependence on layer parameters and epitaxial process conditions. Training objectives concern on enhancing technical competencies, command of foreign language improving and acquiring of complementary competencies (project management, multicultural communication, industry cooperation) Coupling competencies of the candidate (device processing, electrical characterisation, physics of semiconductor) with attributes of host institute in its fields of expertise (advanced materials characterization methods, technology of Si integration, international cooperation) the effects of enhancing academic and complementary qualification of the candidate and increase of European Union research and innovation potential will be obtained.'