SiAM

Silicon at the Atomic and Molecular scale

 Coordinatore COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES 

 Organization address address: rue des Martyrs 17
city: Grenoble
postcode: 38054

contact info
Titolo: Dr.
Nome: Jérôme
Cognome: PLANES
Email: send email
Telefono: +33 4 38 78 31 64
Fax: +33 4 38 78 51 53

 Nazionalità Coordinatore France [FR]
 Totale costo 2˙930˙201 €
 EC contributo 2˙040˙000 €
 Programma FP7-ICT
Specific Programme "Cooperation": Information and communication technologies
 Code Call FP7-ICT-2013-10
 Funding Scheme CP
 Anno di inizio 2013
 Periodo (anno-mese-giorno) 2013-10-01   -   2016-09-30

 Partecipanti

# participant  country  role  EC contrib. [€] 
1    COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

 Organization address address: rue des Martyrs 17
city: Grenoble
postcode: 38054

contact info
Titolo: Dr.
Nome: Jérôme
Cognome: PLANES
Email: send email
Telefono: +33 4 38 78 31 64
Fax: +33 4 38 78 51 53

FR (Grenoble) coordinator 0.00
2    IBM RESEARCH GMBH

 Organization address address: SAEUMERSTRASSE
city: RUESCHLIKON
postcode: 8803

contact info
Titolo: Mrs.
Nome: Catherine
Cognome: Trachsel
Email: send email
Telefono: +41 447248289

CH (RUESCHLIKON) participant 0.00
3    LATVIJAS UNIVERSITATE

 Organization address address: RAINIS BOULEVARD
city: RIGA
postcode: 1586

contact info
Titolo: Dr.
Nome: Vyacheslavs
Cognome: Kashcheyevs
Email: send email
Telefono: +371 67033742

LV (RIGA) participant 0.00
4    PHYSIKALISCH-TECHNISCHE BUNDESANSTALT

 Organization address address: Bundesallee
city: BRAUNSCHWEIG
postcode: 38116

contact info
Titolo: Mr.
Nome: Stefan
Cognome: Hennig
Email: send email
Telefono: +49 531 592 9158

DE (BRAUNSCHWEIG) participant 0.00
5    UNIVERSITEIT TWENTE

 Organization address address: DRIENERLOLAAN
city: ENSCHEDE
postcode: 7522 NB

contact info
Titolo: Mr.
Nome: Benno
Cognome: Pals
Email: send email
Telefono: +31 53 4895427

NL (ENSCHEDE) participant 0.00

Mappa


 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

fabrication    atomic    donor    atom    silicon    surface    time    circuits    adiabaticity       nnthe    crucial    device    cmos    realized    lithography    single    theory    nanowires    stm    integration    spin    bit    dopant    atoms    pumps    dopants    preparation    quantum    extremely    assisted    made    dependent    transistors    nature   

 Obiettivo del progetto (Objective)

SiAM aims at exploiting in future ICT devices and circuits the atomic nature of dopants used throughout microelectronics. The key idea is to use the very sharp, deep and reproducible potential created by a dopant in a semiconductor host crystal. Despite its small size (on the scale of the Bohr radius), the donor state of a single dopant can be addressed with conventional lithography techniques, and is therefore perfectly suitable for realistic devices exploiting the quantum nature of single atoms.nThe project relies on:n- The extremely mature silicon technology in which, however, no quantum mechanical or atomic properties are at play when dopant atoms are used.n- The very atomic nature of these dopants.nnThe consortium will investigate dopants:n- At the device level, with the demonstration of atomic devices (single dopant) and molecular devices (coupled dopants). A crucial effort towards integration of deterministic implantation in CMOS technology will be made.n- In the theoretical understanding, for exploiting the specific features of dopant-based devices, especially time-dependent processes.n- At the system level, with circuits exploiting the atomic characteristics of dopant based devices.nnThe consortium brings together three methods for fabricating single-atom transistors: top-down silicon fabrication, bottom-up growth of nanowires and Scanning Tunneling Microscope (STM)-assisted fabrication. This is a unique combination of expertises only available in Europe. In addition, metrology and theory experts will exploit time-dependent phenomena in atomic devices for applications such as electron pumps.nAnother opportunity is to address directly the spin of a single dopant and make use of its extremely long coherence time to make a single atom quantum bit, crucial for applications in spintronics and quantum computation.nnTarget outcomes:n- Dopant-based devices: (i) atomically-precise dopant junctions realized with STM-assisted hydrogen resist lithography, (ii) single-atom transistors and pumps made in a silicon foundry and (iii) single atom spin quantum bit made in bottom-up silicon nanowires.n- Time-dependent theory: the apparent limitation of non-adiabaticity will be turned into an advantage tby exploiting the dynamical delays due to non-adiabaticity for robust single-gate operation.n- Integration of the dopant-based CMOS devices in a circuit will be realized. STM-assisted lithography will be performed on silicon-on-insulator wafers with special surface preparation and capping, in order to avoid the usual surface preparation at very high temperature. Finally, the development of nanovias will pave the way for reintegration of STM defined donor device chips into a CMOS flowchart.

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