ATOMIC SCALE GFM

Atomic Scale Group-IV Materials for Beyond-CMOS Applications

 Coordinatore UNIVERSITY OF SOUTHAMPTON 

 Organization address address: Highfield
city: SOUTHAMPTON
postcode: SO17 1BJ

contact info
Titolo: Ms.
Nome: Yan
Cognome: Qiao
Email: send email
Telefono: +4423 80593907

 Nazionalità Coordinatore United Kingdom [UK]
 Totale costo 100˙000 €
 EC contributo 100˙000 €
 Programma FP7-PEOPLE
Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)
 Code Call FP7-PEOPLE-2013-CIG
 Funding Scheme MC-CIG
 Anno di inizio 2013
 Periodo (anno-mese-giorno) 2013-09-01   -   2017-08-31

 Partecipanti

# participant  country  role  EC contrib. [€] 
1    UNIVERSITY OF SOUTHAMPTON

 Organization address address: Highfield
city: SOUTHAMPTON
postcode: SO17 1BJ

contact info
Titolo: Ms.
Nome: Yan
Cognome: Qiao
Email: send email
Telefono: +4423 80593907

UK (SOUTHAMPTON) coordinator 100˙000.00

Mappa

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 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

freestanding    limit    fabricate    quantum    characterization    electronics    materials    sige    graphene    atomic    device    resolution    si    qd    nano    examine    gfms    electron    thin    situ    microscope    structures    layer   

 Obiettivo del progetto (Objective)

I will systematically exploit the quantum properties in Group-IV Materials (GFMs) at the atomic scale, by using top-down patterning processes developed for Si technologies. Among GFMs, I will examine graphene, Si, and Ge nano-structures, since these materials are technologically important. More specifically, I will use our He-Ion-Microscope (HIM) milling techniques to fabricate nano-structures beyond the resolution limit of conventional lithography. This research will:

1. Characterize Freestanding Mono-layer or thin-layer of GFMs I will fabricate the freestanding device structure by HIM. The high-resolution of HIM will enable me to fabricate the graphene nano-ribbon as narrow as 5-nm. I will also examine the atomic structures of the device by Transmission-Electron-Microscope (TEM), and compare it with electrical measurements. The similar devices can be made for ultra-thin Si films. 2. In-situ formation and characterization of Si Quantum Dot (QD) I will characterize the Si Single-Electron-Transistor with a QD by in-situ monitoring in HIM. 3. Characterization of SiGe Fins I will characterize SiGe Fin for high performance electro-absorption optical modulator applications.

Impacts of the projects to EU are expected as following ways: 1. I will contribute in the interdisciplinary research areas with my strong research background in theoretical physics, nano-electronics, and Si Photonics. 2. The long-term research activities to QIP will be continued for secure communication and massive commutation, beyond the limit of the classical computations. 3. I will transfer my research experience from Japan. Especially, the industrial experience in Hitachi is helpful for running the clean room managements. 4. I will explore the innovative opportunities for sustainable electronics, in which EU communities play the important contributions towards the matured smart society. 5. I would like to establish the various collaboration within EU and internationally.

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