IN-POWER

InP DHBT MMIC Technology for Millimeter-Wave Power Applications

 Coordinatore DANMARKS TEKNISKE UNIVERSITET 

 Organization address address: Anker Engelundsvej 1, Building 101A
city: KONGENS LYNGBY
postcode: 2800

contact info
Titolo: Dr.
Nome: Tom
Cognome: Johansen
Email: send email
Telefono: +45 45253770

 Nazionalità Coordinatore Denmark [DK]
 Totale costo 586˙043 €
 EC contributo 586˙043 €
 Programma FP7-PEOPLE
Specific programme "People" implementing the Seventh Framework Programme of the European Community for research, technological development and demonstration activities (2007 to 2013)
 Code Call FP7-PEOPLE-2013-ITN
 Funding Scheme MC-ITN
 Anno di inizio 2014
 Periodo (anno-mese-giorno) 2014-02-01   -   2018-01-31

 Partecipanti

# participant  country  role  EC contrib. [€] 
1    DANMARKS TEKNISKE UNIVERSITET

 Organization address address: Anker Engelundsvej 1, Building 101A
city: KONGENS LYNGBY
postcode: 2800

contact info
Titolo: Dr.
Nome: Tom
Cognome: Johansen
Email: send email
Telefono: +45 45253770

DK (KONGENS LYNGBY) coordinator 580˙268.94
2    III V LAB GIE

 Organization address address: ROUTE DE NOZAY
city: MARCOUSSIS
postcode: 91460

contact info
Titolo: Dr.
Nome: Denis
Cognome: Mazerolle
Email: send email
Telefono: +33 1 69 41 57 83

FR (MARCOUSSIS) participant 5˙775.00

Mappa


 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

communication    wireless    wave    transistor    pa    millimeter    circuits    mobile    hbt    data    frequencies    power    ghz    semiconductor    inp   

 Obiettivo del progetto (Objective)

'With the advent of smart phones, tablets and connected cameras, mobile data traffic is growing at a very fast pace. The capacity of mobile backhaul network must be increased to deal with this data explosion. In that respect there is at present an increased interest in exploiting the millimeter-wave frequency range (30-300 GHz) for wireless backhauling. The progress in semiconductor device technology, in particular compound semiconductor transistors such as High Electron Mobility Transistor (HEMT) and Heterojunction Bipolar Transistor (HBT) devices enables the development of wireless communication circuits operating at frequencies well above 100 GHz. The main bottleneck in these mm-wave wireless communication systems today is the power amplifier (PA) which sets the limit on the available transmission range. The overall objective of the 'IN-POWER' project will be to develop an InP HBT technology optimized for millimeter-wave power applications. The development of the InP DHBT technology will be accompanied by the MMIC (Monolitic Microwave Integrated Circuits) implementation of PA's targeting emerging applications at E-band (71-76 and 81-86 GHz) and higher millimeter-wave frequencies.'

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