PriMeBits
Printable memory solutions for sensor, ID, and media applications
| Coordinatore | TEKNOLOGIAN TUTKIMUSKESKUS VTT
Organization address
address: Tietotie 3 contact info |
| Nazionalità Coordinatore | Finland [FI] |
| Totale costo | 3˙986˙937 € |
| EC contributo | 2˙899˙999 € |
| Programma | FP7-ICT
Specific Programme "Cooperation": Information and communication technologies |
| Code Call | FP7-ICT-2007-1 |
| Funding Scheme | CP |
| Anno di inizio | 2008 |
| Periodo (anno-mese-giorno) | 2008-01-01 - 2010-12-31 |
Partecipanti
| # | ||||
|---|---|---|---|---|
| 1 |
TEKNOLOGIAN TUTKIMUSKESKUS VTT
Organization address
address: Tietotie 3 contact info |
FI (Espoo) | coordinator | 0.00 |
| 2 |
Ardaco, a.s.
Organization address
address: Polianky 5 contact info |
SK (Bratislava) | participant | 0.00 |
| 3 |
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
Organization address
address: BATIMENT CE 3316 STATION 1 contact info |
CH (LAUSANNE) | participant | 0.00 |
| 4 |
EVONIK DEGUSSA GmbH
Organization address
address: Rellinghauser Str. contact info |
DE (Essen) | participant | 0.00 |
| 5 |
LEIBNIZ-INSTITUT FUER NEUE MATERIALIEN GEMEINNUETZIGE GMBH
Organization address
address: CAMPUS contact info |
DE (SAARBRUECKEN) | participant | 0.00 |
| 6 |
MITTUNIVERSITETET
Organization address
address: HOLMGATAN 10 contact info |
SE (SUNDSVALL) | participant | 0.00 |
| 7 |
SENSIBLE SOLUTIONS SWEDEN AB
Organization address
address: AKROKEN SCIENCE PARK, STORGATAN 90 contact info |
SE (SUNDSVALL) | participant | 0.00 |
| 8 |
STORA ENSO OYJ
Organization address
address: KANAVARANTA 1 contact info |
FI (HELSINKI) | participant | 0.00 |
| 9 |
STORA ENSO SKOGHALL AKTIEBOLAG
Organization address
address: BRUKSGATAN contact info |
SE (SKOGHALL) | participant | 0.00 |
| 10 |
UPC KONSULTOINTI OY
Organization address
address: GERBYNTIE 18 contact info |
FI (VAASA) | participant | 0.00 |
Mappa
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Obiettivo del progetto (Objective)
In the PriMeBits project, a printable electric low-voltage non-volatile memory is developed for printed sensor, media and wireless ID applications. The main strategy is to utilize printed technology where it has a competitive advantage compared to silicon technology. The project builds on basic research of new materials and components and takes the results into prototyping of new applications. To reduce the research risk, two different technologies for the memory functionality are considered with partially overlapping application areas.nnCurrent printable polymer-based memory technologies typically suffer from i) the needed operating voltage being high, ii) too short lifetime in room atmosphere, iii) poor temperature stability, iv) chemically reactive materials needing encapsulation and/or v) time-consuming temperature-annealing steps in fabrication. Consequently, for many commercially attractive passive and battery-powered applications, the properties of current printable memories are unsuited. To overcome the shortcomings of prior-art approaches, printable inorganic metal-oxide-nanoparticle-based ferroelectric FRAM memory and a resistive metallic-based write-once-read-many (WORM) memory will be developed. To print the ferroelectric memory, new printing inks based on, for example, barium titanate (BaTiO3) nanoparticles will be developed. For the WORM memory, the project will aim at utilizing commercial metal-nanoparticle inks with possibly some customization. Depending on the application, a printed circuitry or an external device is used for the reading and writing of the memory.