EUSIC

High Quality European GaN-Wafer on SiC Substrates for Space Applications

 Coordinatore SiCrystal AG 

 Organization address address: THURN UND TAXIS STRASSE 20
city: NURNBERG
postcode: 90411

contact info
Titolo: Mr.
Nome: Roland
Cognome: Reichstein
Email: send email
Telefono: +499131 40 000 202
Fax: +499131 40 000 100

 Nazionalità Coordinatore Germany [DE]
 Totale costo 3˙282˙694 €
 EC contributo 1˙989˙426 €
 Programma FP7-SPACE
Specific Programme "Cooperation": Space
 Code Call FP7-SPACE-2009-1
 Funding Scheme CP
 Anno di inizio 2010
 Periodo (anno-mese-giorno) 2010-11-01   -   2013-10-31

 Partecipanti

# participant  country  role  EC contrib. [€] 
1    SiCrystal AG

 Organization address address: THURN UND TAXIS STRASSE 20
city: NURNBERG
postcode: 90411

contact info
Titolo: Mr.
Nome: Roland
Cognome: Reichstein
Email: send email
Telefono: +499131 40 000 202
Fax: +499131 40 000 100

DE (NURNBERG) coordinator 852˙781.80
2    LINKOPINGS UNIVERSITET

 Organization address address: CAMPUS VALLA
city: LINKOPING
postcode: 581 83

contact info
Titolo: Prof.
Nome: Göran
Cognome: Hansson
Email: send email
Telefono: +46 13 281259
Fax: +46 13 137568

SE (LINKOPING) participant 318˙850.00
3    FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V

 Organization address address: Hansastrasse 27C
city: MUENCHEN
postcode: 80686

contact info
Titolo: Ms.
Nome: Andrea
Cognome: Zeumann
Email: send email
Telefono: 498912000000
Fax: 498912000000

DE (MUENCHEN) participant 297˙691.00
4    III V LAB GIE

 Organization address address: ROUTE DE NOZAY
city: MARCOUSSIS
postcode: 91460

contact info
Titolo: Dr.
Nome: Denis
Cognome: Mazerolle
Email: send email
Telefono: +33 (0)1 30 77 68 93
Fax: +33 (0)1 30 77 67 86

FR (MARCOUSSIS) participant 295˙412.00
5    UNITED MONOLITHIC SEMICONDUCTORS GMBH

 Organization address address: WILHELM-RUNGE-STRASSE 11
city: ULM
postcode: 89081

contact info
Titolo: Dr.
Nome: Michael
Cognome: Buchta
Email: send email
Telefono: +49 731 505 3081
Fax: +49 731 505 3005

DE (ULM) participant 224˙691.20

Mappa


 Word cloud

Esplora la "nuvola delle parole (Word Cloud) per avere un'idea di massima del progetto.

quality    sicrystal    substrates    ag    sic    space    insulating    technologies    epi    supply    chain    independent    semi    gan   

 Obiettivo del progetto (Objective)

'The project „ High Quality European GaN-Wafer on SiC Substrates for Space Applications” (EuSiC) is aiming at establishing an independent, purely European sustainable supply chain for Gallium Nitride (GaN) based space technologies. The project will significantly reduce the dependence on critical technologies and capabilities from outside Europe for future space applications. An independent supply chain has to include countries of the European Community (EC): a supplier of high-quality semi-insulating Silicon Carbide (SiC) substrates, qualified sources to perform GaN epitaxial layers and as well manufacturers with leading knowledge in GaN device technology required e.g. for Monolithic Microwave Integrated Circuits (MMIC’s). At present, the missing link in this chain is a reliable source for high-quality 3 inch semi-insulating SiC substrates in Europe. The intention of this project is to improve the quality of semi-insulating SiC-substrates at SiCrystal AG, the leading manufacturer of SiC substrates in Europe. The provided substrates shall be analyzed and evaluated by epi-growth specialists IAF, III-V-Lab, and QinetiQ. Finally devices shall be built and verified on the created GaN epi-wafers by UMS. Continuous monitoring and several feedback loops to the quality of the substrates will enable an accelerated development at SiCrystal AG. Also impacts to improvement of the performance of GaN devices are expected. The project will complement activities already undertaken by European Space Agency ESA, who has assembled a consortium of competent partners under the: GaN Reliability Enhancement and Technology Transfer Initiative (GREAT2).'

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